Mallory Mativenga | Kyung Hee University (original) (raw)

Papers by Mallory Mativenga

Journal of The Electrochemical Society, 2011

Medical Imaging 2022: Physics of Medical Imaging, 2022

2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), 2021

This paper investigates the development of highly stable thin-film transistors (TFTs) for flexibl... more This paper investigates the development of highly stable thin-film transistors (TFTs) for flexible and transparent displays. Structural designs and material requirements for mechanical flexibility and optical transparency, as well as several fabrication techniques used to achieve high operational stability, are investigated. In particular, a display backplane with circular amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs having electrically shorted top and bottom gates is found to exhibit better stability to electric current and mechanical bending stress than conventionally used rectangular TFTs. Additionally, hard saturation in the output characteristics of the circular a-IGZO TFTs guarantees constant drive current within a wide fluctuation margin of the input voltage, thereby eliminating the need for voltage (IR)-drop compensation circuits. Furthermore, the circular shape translates to bending direction independence and immunity to local electric field crowding at corners or channel edges. The double gate structure enables volume accumulation, which enhances operational performance and stability.

Medical Imaging 2020: Physics of Medical Imaging, 2020

Digital chest tomosynthesis that provides a reconstructed 3D chest image is a superior technique ... more Digital chest tomosynthesis that provides a reconstructed 3D chest image is a superior technique to detect chest diseases. As it is difficult to detect diseases like lung cancer with conventional 2D digital chest X-ray technology (CXT), digital chest tomosynthesis improves upon the many of the limitations inherent in the 2D digital CXT. In this study, we report a digital chest tomosynthesis system (D-CTS) that can generate multi X-ray information for the reconstruction of a 3D Xray chest image. The D-CTS reported herein employs an array of carbon nanotube (CNT) emitter-based cold cathode electron-guns that are triggered in sequence to provide a gantry-less system (Figure 1). The CNTs are achieved by direct growth on a metal substrate and have a spaghetti-like structure (Figure 2) with fast response to electrical bias under vacuum conditions. Unlike conventional rotating type systems with gantries, our CTS has the advantage of less motion blur in image acquisition, given its stationary position. Additionally, the switching from one electron-gun (e-gun) to the next is much faster than the speed of conventional gantries, allowing faster acquisition time t required for digital operation. This system shows outstanding field emission property for taking X-ray images. The design, fabrication process and imaging processing of the multi-beam CNT X-ray system will be discussed during the presentation.

Japanese Journal of Applied Physics, 2020

IEEE Electron Device Letters, 2019

Background: Gold nanoparticles have potential use in cancer diagnosis and therapy due to their si... more Background: Gold nanoparticles have potential use in cancer diagnosis and therapy due to their size and enhanced permeability and retention effect that enables easy penetration and accumulation at tumor sites. Indole-3-carbinol (I3C), a phenolic phytochemical, has been reported to possess pro-apoptotic, anti-proliferative and anti-carcinogenic properties via modulation of immune pathways in Jurkat cell. So, an attempt has been made to green synthesize gold nanoparticles using indole-3-carbinol and to investigate whether its anticancer efficacy is enhanced at the nanoscale level or not by the induction of apoptosis. Methodology: AuNPI3Cs were characterized and its cellular uptake was investigated using fluorescence microscopy. Induction of apoptosis of AuNPI3Cs in Jurkat and Dalton ascites lymphoma (DLA) cells was assessed by DAPI/PI staining, cell cycle study by flow cytometry, immunoblotting assay and by other relevant methods. Findings: FTIR analysis confirmed the role of indole-3-carbinol in the stabilization of AuNPI3Cs. TEM analysis study revealed that AuNPI3Cs were mostly spherical in shape with an average particle size of 3nm. Results showed that the respective IC50 doses of AuNPI3Cs were significantly capable of elevating intracellular reactive oxygen species in Jurkat and DLA cells. AuNPI3Cs induced apoptosis by increasing reactive oxygen species, chromatin condensation, cell cycle arrest at G 0 /G 1 , expression of proapoptotic proteins and mitochondrial dysfunction in Jurkat cell, T cell leukemia and also in lymphoma cell. The fluorescence studies of cytoskeletal and nuclear morphology showed that AuNPI3Cs treatment changed the structural organization of actin filaments in T-cell leukemia cell. Conclusion and Significance: The overall results firmly indicated that indole-3-carbinol, as appropriate reducing and stabilizing agent, led to the green synthesis of potent anticancer agent AuNPI3Cs with high potential for cancer therapy and may be considered as one of the best anticancer theranostic nanostructures among those reported until date.

Advanced Functional Materials, 2017

Advancement in thin-film transistor (TFT) technologies has extended to applications that can with... more Advancement in thin-film transistor (TFT) technologies has extended to applications that can withstand extreme bending or folding. The changes of the performances of amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs on polyimide substrate after application of extreme mechanical bending strain are studied. The TFT designs include mesh and strip patterned source/drain metal lines as well as strip patterned a-IGZO semiconductor layer. The robustness of the a-IGZO TFTs with the strain of 2.17% corresponding to the radius of 0.32 mm is tested and no crack generation even after 60 000 bending cycles is found. The split of source/drain electrodes and semiconductor layer can improve the mechanical bending stability of the TFTs. This can be possible by using conventional TFT manufacturing process so that this technology can be easily applied to build robust TFT array for foldable displays.

Journal of Information Display, 2011

Jang (2011) Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-... more Jang (2011) Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-stopper and a viahole structure,

SID Symposium Digest of Technical Papers, 2015

ABSTRACT Highly stable, amorphous-indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs)... more ABSTRACT Highly stable, amorphous-indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) with the conventional back channeletch (BCE) structure are achieved by post-fabrication blue (445 nm) laser annealing (BLA). The blue laser has a 350 µm × 350 µm square beam profile and is scanned line by line in the TFT channel width direction. It is found that after BLA, the BCE a-IGZO TFTs exhibited better stability under negative bias and light-illumination stress.

ECS Transactions, 2010

The bias-induced instability in hydrogenated amorphous silicon (a-Si:H), amorphous indium-gallium... more The bias-induced instability in hydrogenated amorphous silicon (a-Si:H), amorphous indium-gallium-zinc-oxide (a-IGZO) and low temperature poly-Si (LTPS) thin-film transistors (TFTs) is investigated. Gate bias-induced charge trapping at the active-layer/gate-insulator interface and into the gate-insulator, is the origin of positive threshold voltage (Vth) shift in a-Si:H and a-IGZO TFTs. The time dependence of the Vth shift (Vth) in a-Si:H and a-IGZO TFTs is explained by the charge trapping model rather than bond breaking model. The swing degradation-related Vth in LTPS TFTs, originates from the generation of grain boundary trap states, interface trap states and fixed oxide charge, when a negative gate-bias is applied. A good fit of the measured results is obtained by the bond-breaking model. Analysis of the charge trapping and bond breaking mechanisms is used to understand the electrical stability of the three kinds of TFTs.

Solid-State Electronics, 2010

We have studied the fabrication of ring oscillator and shift resistor using p-type metal–oxide–se... more We have studied the fabrication of ring oscillator and shift resistor using p-type metal–oxide–semiconductor (pMOS) TFTs based on silicon-on-glass (SiOG). The TFT exhibited field-effect mobility of 183 cm 2 /V s, threshold voltage of −0.30 V and gate voltage swing ...

IEEE Electron Device Letters, 2011

We report the effect of the drain-offset length on the performance of amorphous-indium-gallium-zi... more We report the effect of the drain-offset length on the performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). While the field-effect mobility decreases from ∼40 to 10 cm 2 /V • s by increasing the drain-offset length from 0 to 5 μm, the threshold voltage (V th) and swing (S) remain relatively independent of the offset length variation. Because of its high mobility even for large (5 μm) offset lengths, the drain-offset a-IGZO TFT can be used to eliminate the kickback voltage in active-matrix displays. Index Terms-Amorphous indium-gallium-zinc-oxide (a-IGZO), gate-source capacitance (C gd), kickback voltage.

Electrochemical and Solid-State Letters, 2011

The fabrication of the low voltage-driven inverter, ring oscillator, and shift resistor using n-a... more The fabrication of the low voltage-driven inverter, ring oscillator, and shift resistor using n-and p-channel thin-film transistors (TFTs) based on the silicon-on-glass (SiOG) substrate was studied. The manufacturing process of n-and p-channel TFTs was the same as that of low ...

ECS Transactions, 2010

Hot carrier (HC) instability of thin film transistors (TFTs) fabricated on single crystalline Cor... more Hot carrier (HC) instability of thin film transistors (TFTs) fabricated on single crystalline Corning® Silicon-on-Glass (SiOG) substrates is studied (1). The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with electron and hole field effect mobilities (μfe) of ~251 and 201 cm2/V⋅s, threshold voltages of ~-0.3 and -1.2 V, and gate swing (S) values of ~180 mV/dec. While p-channel TFTs exhibit good stability, on-current (ION) degradation is unfortunately observed in the transfer characteristics of the n-channel TFT due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure to minimize HC instability in the n-channel SiOG TFTs is reported. The LDD design has 2 μm regions produced by ion implanting phosphorus at 10 keV to a light doping (n-) level. N- levels of ~1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that leads to HC improvement with minimal detrimental im...

Materials, 2021

The effect of crystallization process speed on the morphology of solution-processed methyl ammoni... more The effect of crystallization process speed on the morphology of solution-processed methyl ammonium lead iodide (MAPbI3) thin films is investigated. Crystallization speed is controlled by varying the number of annealing steps, temperature, and resting time between steps. The resting period allows solvent-controlled growth (SCG) in which crystallization progresses slowly via an intermediate phase—during which solvents slowly evaporate away from the films. SCG results in fewer residues, fewer pinholes, and larger grain sizes. Consequently, thin-film transistors with SCG MAPbI3 exhibit smaller hysteresis in their current-voltage characteristics than those without, demonstrating the benefits of SCG toward hysteresis-free perovskite devices.

IEEE Electron Device Letters

We used thin-film transistors (TFTs) to understand the effect of precursor composition on ion mig... more We used thin-film transistors (TFTs) to understand the effect of precursor composition on ion migration in the hybrid perovskite CH₃NH₃PbI₃(MAPbI₃). For all the precursor compositions we investigated (i.e. MAI/PbI₂ ratios of 0.5, 0.8, 1.0, and 1.2), the TFTs exhibited anomalous hysteresis in their current-voltage (I-V) characteristics, indicating mixed ionic-electronic conduction. The hysteresis in the TFTs with MAI/PbI₂ = 0.5 was the largest, followed by that of the TFTs with ratios of 1.2, 1.0, and 0.8. Although residual PbI₂ was the source of hysteresis in the PbI₂-rich TFTs (MAI/PbI₂ = 0.5), we conclude that it may enhance electronic conduction and minimize ion migration when present in small amounts (as in the case of MAI/PbI₂ = 0.8). Ion vacancy defects in grain boundaries are pathways for ion migration and the PbI₂ residues passivate these defects, there by minimizing the vacancy-mediated migration of ions in the MAPbI₃.

IEEE Electron Device Letters, 2016

Short-channel Corbino thin-film transistors (TFTs) exhibit infinite output resistance beyond pinc... more Short-channel Corbino thin-film transistors (TFTs) exhibit infinite output resistance beyond pinchoff when the outer-ring electrode is biased as the drain but suffer from low drain currents. It is shown here that the employment of a thin (<;25 nm) amorphous oxide semiconductor and a double-gate (DG) structure (with a top-gate electrically tied to a bottom-gate) increases the drain currents of the Corbino TFTs biased in the outer-drain condition by over two times through bulk-accumulation (BA), without compromising their infinite output resistance beyond pinchoff or bias, temperate, and light stability. By experiment and through 3-D TCAD simulations, evidence of BA under DG modulation and the origin of the infinite output resistance beyond pinchoff in Corbino TFTs are also revealed in this letter.

SID Symposium Digest of Technical Papers

SID Symposium Digest of Technical Papers

Journal of The Electrochemical Society, 2011

Medical Imaging 2022: Physics of Medical Imaging, 2022

2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), 2021

This paper investigates the development of highly stable thin-film transistors (TFTs) for flexibl... more This paper investigates the development of highly stable thin-film transistors (TFTs) for flexible and transparent displays. Structural designs and material requirements for mechanical flexibility and optical transparency, as well as several fabrication techniques used to achieve high operational stability, are investigated. In particular, a display backplane with circular amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs having electrically shorted top and bottom gates is found to exhibit better stability to electric current and mechanical bending stress than conventionally used rectangular TFTs. Additionally, hard saturation in the output characteristics of the circular a-IGZO TFTs guarantees constant drive current within a wide fluctuation margin of the input voltage, thereby eliminating the need for voltage (IR)-drop compensation circuits. Furthermore, the circular shape translates to bending direction independence and immunity to local electric field crowding at corners or channel edges. The double gate structure enables volume accumulation, which enhances operational performance and stability.

Medical Imaging 2020: Physics of Medical Imaging, 2020

Digital chest tomosynthesis that provides a reconstructed 3D chest image is a superior technique ... more Digital chest tomosynthesis that provides a reconstructed 3D chest image is a superior technique to detect chest diseases. As it is difficult to detect diseases like lung cancer with conventional 2D digital chest X-ray technology (CXT), digital chest tomosynthesis improves upon the many of the limitations inherent in the 2D digital CXT. In this study, we report a digital chest tomosynthesis system (D-CTS) that can generate multi X-ray information for the reconstruction of a 3D Xray chest image. The D-CTS reported herein employs an array of carbon nanotube (CNT) emitter-based cold cathode electron-guns that are triggered in sequence to provide a gantry-less system (Figure 1). The CNTs are achieved by direct growth on a metal substrate and have a spaghetti-like structure (Figure 2) with fast response to electrical bias under vacuum conditions. Unlike conventional rotating type systems with gantries, our CTS has the advantage of less motion blur in image acquisition, given its stationary position. Additionally, the switching from one electron-gun (e-gun) to the next is much faster than the speed of conventional gantries, allowing faster acquisition time t required for digital operation. This system shows outstanding field emission property for taking X-ray images. The design, fabrication process and imaging processing of the multi-beam CNT X-ray system will be discussed during the presentation.

Japanese Journal of Applied Physics, 2020

IEEE Electron Device Letters, 2019

Background: Gold nanoparticles have potential use in cancer diagnosis and therapy due to their si... more Background: Gold nanoparticles have potential use in cancer diagnosis and therapy due to their size and enhanced permeability and retention effect that enables easy penetration and accumulation at tumor sites. Indole-3-carbinol (I3C), a phenolic phytochemical, has been reported to possess pro-apoptotic, anti-proliferative and anti-carcinogenic properties via modulation of immune pathways in Jurkat cell. So, an attempt has been made to green synthesize gold nanoparticles using indole-3-carbinol and to investigate whether its anticancer efficacy is enhanced at the nanoscale level or not by the induction of apoptosis. Methodology: AuNPI3Cs were characterized and its cellular uptake was investigated using fluorescence microscopy. Induction of apoptosis of AuNPI3Cs in Jurkat and Dalton ascites lymphoma (DLA) cells was assessed by DAPI/PI staining, cell cycle study by flow cytometry, immunoblotting assay and by other relevant methods. Findings: FTIR analysis confirmed the role of indole-3-carbinol in the stabilization of AuNPI3Cs. TEM analysis study revealed that AuNPI3Cs were mostly spherical in shape with an average particle size of 3nm. Results showed that the respective IC50 doses of AuNPI3Cs were significantly capable of elevating intracellular reactive oxygen species in Jurkat and DLA cells. AuNPI3Cs induced apoptosis by increasing reactive oxygen species, chromatin condensation, cell cycle arrest at G 0 /G 1 , expression of proapoptotic proteins and mitochondrial dysfunction in Jurkat cell, T cell leukemia and also in lymphoma cell. The fluorescence studies of cytoskeletal and nuclear morphology showed that AuNPI3Cs treatment changed the structural organization of actin filaments in T-cell leukemia cell. Conclusion and Significance: The overall results firmly indicated that indole-3-carbinol, as appropriate reducing and stabilizing agent, led to the green synthesis of potent anticancer agent AuNPI3Cs with high potential for cancer therapy and may be considered as one of the best anticancer theranostic nanostructures among those reported until date.

Advanced Functional Materials, 2017

Advancement in thin-film transistor (TFT) technologies has extended to applications that can with... more Advancement in thin-film transistor (TFT) technologies has extended to applications that can withstand extreme bending or folding. The changes of the performances of amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs on polyimide substrate after application of extreme mechanical bending strain are studied. The TFT designs include mesh and strip patterned source/drain metal lines as well as strip patterned a-IGZO semiconductor layer. The robustness of the a-IGZO TFTs with the strain of 2.17% corresponding to the radius of 0.32 mm is tested and no crack generation even after 60 000 bending cycles is found. The split of source/drain electrodes and semiconductor layer can improve the mechanical bending stability of the TFTs. This can be possible by using conventional TFT manufacturing process so that this technology can be easily applied to build robust TFT array for foldable displays.

Journal of Information Display, 2011

Jang (2011) Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-... more Jang (2011) Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-stopper and a viahole structure,

SID Symposium Digest of Technical Papers, 2015

ABSTRACT Highly stable, amorphous-indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs)... more ABSTRACT Highly stable, amorphous-indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) with the conventional back channeletch (BCE) structure are achieved by post-fabrication blue (445 nm) laser annealing (BLA). The blue laser has a 350 µm × 350 µm square beam profile and is scanned line by line in the TFT channel width direction. It is found that after BLA, the BCE a-IGZO TFTs exhibited better stability under negative bias and light-illumination stress.

ECS Transactions, 2010

The bias-induced instability in hydrogenated amorphous silicon (a-Si:H), amorphous indium-gallium... more The bias-induced instability in hydrogenated amorphous silicon (a-Si:H), amorphous indium-gallium-zinc-oxide (a-IGZO) and low temperature poly-Si (LTPS) thin-film transistors (TFTs) is investigated. Gate bias-induced charge trapping at the active-layer/gate-insulator interface and into the gate-insulator, is the origin of positive threshold voltage (Vth) shift in a-Si:H and a-IGZO TFTs. The time dependence of the Vth shift (Vth) in a-Si:H and a-IGZO TFTs is explained by the charge trapping model rather than bond breaking model. The swing degradation-related Vth in LTPS TFTs, originates from the generation of grain boundary trap states, interface trap states and fixed oxide charge, when a negative gate-bias is applied. A good fit of the measured results is obtained by the bond-breaking model. Analysis of the charge trapping and bond breaking mechanisms is used to understand the electrical stability of the three kinds of TFTs.

Solid-State Electronics, 2010

We have studied the fabrication of ring oscillator and shift resistor using p-type metal–oxide–se... more We have studied the fabrication of ring oscillator and shift resistor using p-type metal–oxide–semiconductor (pMOS) TFTs based on silicon-on-glass (SiOG). The TFT exhibited field-effect mobility of 183 cm 2 /V s, threshold voltage of −0.30 V and gate voltage swing ...

IEEE Electron Device Letters, 2011

We report the effect of the drain-offset length on the performance of amorphous-indium-gallium-zi... more We report the effect of the drain-offset length on the performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). While the field-effect mobility decreases from ∼40 to 10 cm 2 /V • s by increasing the drain-offset length from 0 to 5 μm, the threshold voltage (V th) and swing (S) remain relatively independent of the offset length variation. Because of its high mobility even for large (5 μm) offset lengths, the drain-offset a-IGZO TFT can be used to eliminate the kickback voltage in active-matrix displays. Index Terms-Amorphous indium-gallium-zinc-oxide (a-IGZO), gate-source capacitance (C gd), kickback voltage.

Electrochemical and Solid-State Letters, 2011

The fabrication of the low voltage-driven inverter, ring oscillator, and shift resistor using n-a... more The fabrication of the low voltage-driven inverter, ring oscillator, and shift resistor using n-and p-channel thin-film transistors (TFTs) based on the silicon-on-glass (SiOG) substrate was studied. The manufacturing process of n-and p-channel TFTs was the same as that of low ...

ECS Transactions, 2010

Hot carrier (HC) instability of thin film transistors (TFTs) fabricated on single crystalline Cor... more Hot carrier (HC) instability of thin film transistors (TFTs) fabricated on single crystalline Corning® Silicon-on-Glass (SiOG) substrates is studied (1). The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with electron and hole field effect mobilities (μfe) of ~251 and 201 cm2/V⋅s, threshold voltages of ~-0.3 and -1.2 V, and gate swing (S) values of ~180 mV/dec. While p-channel TFTs exhibit good stability, on-current (ION) degradation is unfortunately observed in the transfer characteristics of the n-channel TFT due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure to minimize HC instability in the n-channel SiOG TFTs is reported. The LDD design has 2 μm regions produced by ion implanting phosphorus at 10 keV to a light doping (n-) level. N- levels of ~1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that leads to HC improvement with minimal detrimental im...

Materials, 2021

The effect of crystallization process speed on the morphology of solution-processed methyl ammoni... more The effect of crystallization process speed on the morphology of solution-processed methyl ammonium lead iodide (MAPbI3) thin films is investigated. Crystallization speed is controlled by varying the number of annealing steps, temperature, and resting time between steps. The resting period allows solvent-controlled growth (SCG) in which crystallization progresses slowly via an intermediate phase—during which solvents slowly evaporate away from the films. SCG results in fewer residues, fewer pinholes, and larger grain sizes. Consequently, thin-film transistors with SCG MAPbI3 exhibit smaller hysteresis in their current-voltage characteristics than those without, demonstrating the benefits of SCG toward hysteresis-free perovskite devices.

IEEE Electron Device Letters

We used thin-film transistors (TFTs) to understand the effect of precursor composition on ion mig... more We used thin-film transistors (TFTs) to understand the effect of precursor composition on ion migration in the hybrid perovskite CH₃NH₃PbI₃(MAPbI₃). For all the precursor compositions we investigated (i.e. MAI/PbI₂ ratios of 0.5, 0.8, 1.0, and 1.2), the TFTs exhibited anomalous hysteresis in their current-voltage (I-V) characteristics, indicating mixed ionic-electronic conduction. The hysteresis in the TFTs with MAI/PbI₂ = 0.5 was the largest, followed by that of the TFTs with ratios of 1.2, 1.0, and 0.8. Although residual PbI₂ was the source of hysteresis in the PbI₂-rich TFTs (MAI/PbI₂ = 0.5), we conclude that it may enhance electronic conduction and minimize ion migration when present in small amounts (as in the case of MAI/PbI₂ = 0.8). Ion vacancy defects in grain boundaries are pathways for ion migration and the PbI₂ residues passivate these defects, there by minimizing the vacancy-mediated migration of ions in the MAPbI₃.

IEEE Electron Device Letters, 2016

Short-channel Corbino thin-film transistors (TFTs) exhibit infinite output resistance beyond pinc... more Short-channel Corbino thin-film transistors (TFTs) exhibit infinite output resistance beyond pinchoff when the outer-ring electrode is biased as the drain but suffer from low drain currents. It is shown here that the employment of a thin (<;25 nm) amorphous oxide semiconductor and a double-gate (DG) structure (with a top-gate electrically tied to a bottom-gate) increases the drain currents of the Corbino TFTs biased in the outer-drain condition by over two times through bulk-accumulation (BA), without compromising their infinite output resistance beyond pinchoff or bias, temperate, and light stability. By experiment and through 3-D TCAD simulations, evidence of BA under DG modulation and the origin of the infinite output resistance beyond pinchoff in Corbino TFTs are also revealed in this letter.

SID Symposium Digest of Technical Papers

SID Symposium Digest of Technical Papers