Mohd Arif Mohd Sarjidan | University of Malaya, Malaysia (original) (raw)

Papers by Mohd Arif Mohd Sarjidan

Research paper thumbnail of Fabrication and characterization of solution processed top-gate-type organic light-emitting transistor

Nanoscience and Nanotechnology Letters. (Accepted) (ISI-cited)

Research paper thumbnail of One-pot synthesis of Ag decorated ZnO microsphere in TEA media with enhance photocatalytic activity

Journal of Nanoelectronics and Optoelectronics. (ISI-cited)

Microsphere ZnO nanostructures (ZnO-MNs) decorated with Ag nanoparticles (NPs) were synthesized t... more Microsphere ZnO nanostructures (ZnO-MNs) decorated with Ag nanoparticles (NPs) were synthesized through facile one-pot solvothermal reaction in TEA media. In this process, the TEA was utilized to terminate the growth of ZnO nanoparticles which form the ZnO-MNs and also act as a capping agent. A series of characterizations including X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectrum shows the accomplished combination of Ag-NPs with ZnO-MNs. Moreover, the photocatalytic studies with Methylene Blue (MB) as model reaction exhibited that Ag modification in certain amount could greatly improve the photocatalytic performance of ZnO-MNs compared to the undoped ZnO-MNs.

Research paper thumbnail of Electronic device characteristics and charge conduction mechanisms of Single-layer OLED based on Alq3, TPD:Alq3 and TPD:PBD:Alq3 blend system

Journal of Nanoelectronics and Optoelectronics. (ISI-cited)

Three single layer OLED devices which are ITO/PEDOT:PSS/Alq 3 /Al, ITO/PEDOT:PSS/TPD:Alq 3 /Al an... more Three single layer OLED devices which are ITO/PEDOT:PSS/Alq 3 /Al, ITO/PEDOT:PSS/TPD:Alq 3 /Al and ITO/PEDOT:PSS/TPD:PBD:Alq 3 /Al have been fabricated. The thickness of pure thin film of Alq 3 , and blended thin films of TPD:Alq 3 and TPD:PBD:Alq 3 which form the emission layer of the single layer OLED devices is 80 nm. Structural properties of Alq 3 , TPD:Alq 3 and TPD:PBD:Alq 3 thin films were characterized by Fourier Transform Infrared (FTIR) and X-Ray diffraction (XRD). The FTIR spectrum of TPD:PBD:Alq 3 blend shows significant overlap from each vibration mode of TPD, PBD and Alq 3 molecules. It is found that a broad diffraction hump located at around 2 ≈ 25 in the XRD spectra, indicating that all pure and blends materials have formed amorphous thin films. The electronics parameters such as ideality factor n, barrier height b , saturation current, I o and series resistance R s are extracted from the conventional ln I-V , Cheung's functions and Fowler Nordheim (FN) function. The trend of the evaluated parameters calculated from Cheung's and Fowler Nordheim (FN) methods are found to be consistent with those calculated from the conventional I-V method. In the double logarithmic I-V plots, three distinct regions based on the slope of the plots have been identified and the transport mechanisms are discussed and explained.

Research paper thumbnail of Effect of transition metal dopant on the optoelectronics properties of zinc oxide thin film

Journal of Nanoelectronics and Optoelectronics. (ISI-cited)

The influence of nickel (Ni) dopant concentration of Ni-doped zinc oxide (ZnO) derived from sol g... more The influence of nickel (Ni) dopant concentration of Ni-doped zinc oxide (ZnO) derived from sol gel technique on surface morphology, optical, luminescence, electrical and electronic transition properties were investigated. Surface morphology image of the thin films were obtained by using emission scanning electron microscope (FESEM). Optical and luminescence properties of the thin films were characterized by using Ultraviolet/Visible/Near infrared (UV/Vis/NIR) and photoluminescence (PL) spectrometer, respectively. Sheet resistance and work function of the thin films were determined by using four point probe and photoemission spectrometer, respectively. The thin film exhibits a smooth surface with grain size of 40-80 nm which depends on dopant concentration. All samples show a high transparency; over 80% in the visible range. Optical properties of the films are not affected so much by Ni dopant concentration. The sheet resistance of the thin film increases with the increase in Ni dopant concentration. The work function of the films obtained decreases after Ni dopant concentration exceeds 1%.

Research paper thumbnail of Electroluminescence and negative differential resistance studies of TPD:PBD:Alq3 blend organic-light emitting diodes

Bulletin of Materials Science. (Accepted) (ISI-cited)

Ternary system of single layer organic light-emitting diodes (OLEDs) were fabricated containing T... more Ternary system of single layer organic light-emitting diodes (OLEDs) were fabricated containing Tris(8-hydroxyquinoline) aluminum (Alq3) blended with N,N'-diphenyl-N,N'bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) and 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) small molecules. Electroluminescence (EL) properties were investigated with respect to blend systems. Significant improvement in turn-on voltage and luminance intensity was observed by employing the blends technique. Negative differential resistance (NDR) characteristics observed at a low voltage region in blended OLED is related to the generation of guest hopping side (GHS) and phonon scattering phenomenon. However, luminescence of the devices is not altered by the NDR effect.

Research paper thumbnail of Blending effect on small molecule based OLED

Optoelectronics And Advanced Materials – Rapid Communications (ISI-cited)

Organic light-emitting diodes (OLEDs) were fabricated containing guest molecule of Tris(8-hydroxy... more Organic light-emitting diodes (OLEDs) were fabricated containing guest molecule of Tris(8-hydroxyquinoline) aluminium (Alq3) blend with host molecules of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) and 2-(4biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) small molecules. Optical, photoluminescence (PL), electroluminescence (EL) and impedance properties were investigated with respect to blend systems. Optical energy gap and PL intensity obtained increased in blend systems attributed to high energy transfer from host to guest molecules. Luminance and current efficiency were enhanced for blended OLEDs as compared to that of pure Alq3, related to high accumulation of charge carrier and exciton recombination in guest. Impedance spectra show conductivity of OLEDs was improved by blending technique.

Research paper thumbnail of Annealing Effect on Small Molecules Blend Organic Light-Emitting Diodes

Advanced Materials Research (Scopus cited)

This research work investigates the influence of the annealing process upon the performance of ph... more This research work investigates the influence of the annealing process upon the performance of photo-emissive layer of organic light-emitting diode (OLED). The photo-emissive layer consists of a ternary blend of N, N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'diamine (TPD), 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) and tris-8-hydroxyquinoline (Alq3), to produce TPD:PBD:Alq3 (at 1:1:1 ratio) blend thin films, in which the material solutions are deposited onto clean substrate via spin-coating method. The samples were annealed at 100 o C in 10, 20 and 30 minute of time in an open-air condition. The results reveal that the annealing process at 10 minutes produces an optimum performance of the ternary OLED.

Research paper thumbnail of Study and fabrication of europium picrate triethylene glycol complex

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy (ISI-cited)

a b s t r a c t A mononuclear of [Eu(NO 3 )(Pic)(H 2 O) 2 (EO3)](Pic)·(0.73)H 2 O complex, where ... more a b s t r a c t A mononuclear of [Eu(NO 3 )(Pic)(H 2 O) 2 (EO3)](Pic)·(0.73)H 2 O complex, where EO3 = trietraethylene glycol and Pic = picrate anion, shows a red emission when used as an active layer in a single layer of ITO/EO3-Eu-Pic/Al configuration. The crystal structure of the complex consists of [Eu(NO 3 )(Pic)(H 2 O) 2 (EO3)] + cation and [Pic] − anion.

Research paper thumbnail of The influence of Sn doping on the structural and morphology of ZnO nanowire deposited using PVD technique

JURNAL FIZIK MALAYSIA

The thin film of ZnO nanowire and Sn-doped ZnO nanobelt were fabricated through physical vapor de... more The thin film of ZnO nanowire and Sn-doped ZnO nanobelt were fabricated through physical vapor deposition (PVD) technique on Si (111) substrate. X-ray Diffaction (XRD) and Energy Dispersive X-ray (EDX) studies demonstrated that there are significant change in crystal structure and content of the elements as the nano structures change from nanowire to nanobelt when the ZnO thin film was doped with Sn. The morphological change in the shape of the nanostructure from nanowire to nanobelt and to nanoring can be observed from the Field Effect Scanning Electron Microscopy (FESEM) images. The high polarity of Sndoped ZnO has caused the formation of the spiral structure in the nanostructure of the ZnO thin film.

Research paper thumbnail of Optical, Structural and Electrical Study of Organic Light Emitting Diode (OLED)Based on MEH∕PPV:C60 CompositeOptical, Structural and Electrical Study of Organic Light Emitting Diode (OLED) Based on MEH/PPV:C60 Composite

American Institute of Physics (Conference Proceeding)

The influence of C 60 on absorption, photoluminescence (PL) and luminescence properties of a sing... more The influence of C 60 on absorption, photoluminescence (PL) and luminescence properties of a single layer MEH/PPV:C 60 organic light emitting diode has been investigated. The MEH/PPV molecules were mixed with 5wt%, 20wt% and 50wt% of C60 and stirred in toluene. The emissive layer of OLED was deposited the MEH/PPV: C 60 mixture solution on cleaned ITO by spin-coating at 3000rpm in 40s. The absorption and PL characterization of the spin-cast films were carried out using UV/Vis/NIR spectrometer (Jasco V-570) and luminescence spectrometer (Perkin Elmer, LS50B), respectively. The current-voltage (I-V) properties of OLED were obtained using source measurement unit (SMU) (2400, Keithley Instrument).

Research paper thumbnail of Fabrication and Characterization of New Hybrid Organic Light Emitting Diode (OLED): Europiumpicratetriethylene oxide ComplexFabrication and Characterization of New Hybrid Organic Light Emitting Diode (OLED): Europium-picrate-triethylene oxide Complex

American Institute of Physics (Conference Proceeding)

Thin-film light emitting devices based on organic materials have attracted vast interest in appli... more Thin-film light emitting devices based on organic materials have attracted vast interest in applications such as light emitting diode (LED) and flat-panel display. The organic material can be attached with inorganic material to enhance the performance of the light emitting device. A hybrid OLED based on a new complex of europium picrate (Eu-pic) with triethylene oxide (EO3) ligand is fabricated. The OLED is fabricated by using spin coating technique with acetone as the solvent and aluminum as the top electrode. The optical, photoluminescence (PL) and electrical properties of the sample are carried out by UV-Vis spectroscopy (Jasco V-750), luminescence spectroscopy (Perkin Elmer LS-500) and source measure unit (SMU) (Keithly), respectively.

Conference Presentations by Mohd Arif Mohd Sarjidan

Research paper thumbnail of Fabrication and Characterization of Organic Light-Emitting Diodes Containing Small Molecules Blends as Emissive Layer

Organic light-emitting diodes (OLEDs) were fabricated containing guest molecule of Tris(8-hydroxy... more Organic light-emitting diodes (OLEDs) were fabricated containing guest molecule of Tris(8-hydroxyquinoline) aluminum (Alq 3 ) blend with host molecules of N,N'-diphenyl-N,N'-bis(3methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) and 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) small molecules. Optical, photoluminescence (PL) and electroluminescence (EL) properties were investigated with respect to blend systems. The obtained optical energy gap and PL intensity in the blend systems increased due to the transfer of high energy from the host to guest molecules. Luminance and current efficiency were enhanced for blended OLEDs as compared to that of pure Alq 3 , related to high exiton recombination in guest caused by high injection and accumulation of charge carrier.

Research paper thumbnail of Annealing Effect on Small Molecules Blend Organic Light-Emitting Diodes

This research work investigates the influence of the annealing process upon the performance of ph... more This research work investigates the influence of the annealing process upon the performance of photo-emissive layer of organic light-emitting diode (OLED). The photo-emissive layer consists of a ternary blend of N, N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'diamine (TPD), 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) and tris-8-hydroxyquinoline (Alq3), to produce TPD:PBD:Alq3 (at 1:1:1 ratio) blend thin films, in which the material solutions are deposited onto clean substrate via spin-coating method. The samples were annealed at 100 o C in 10, 20 and 30 minute of time in an open-air condition. The results reveal that the annealing process at 10 minutes produces an optimum performance of the ternary OLED.

Research paper thumbnail of Structural and Optical Properties of Nickel-doped and Undoped Zinc Oxide Thin Films Deposited by sol-gel method

Research paper thumbnail of Influence of doping on optical, structural, luminescence on single layer OLED based on Alq3

Research paper thumbnail of Effect of Ligands on Optical and Photoluminescence Properties of Hybrid Europium Complexes OLEDS

Research paper thumbnail of Optical, Photoluminescence and Electrical Properties of OLED Based on Europium Complex with tri-ethylene Oxide (EO3) ligand

Research paper thumbnail of Fabrication and characterization of solution processed top-gate-type organic light-emitting transistor

Nanoscience and Nanotechnology Letters. (Accepted) (ISI-cited)

Research paper thumbnail of One-pot synthesis of Ag decorated ZnO microsphere in TEA media with enhance photocatalytic activity

Journal of Nanoelectronics and Optoelectronics. (ISI-cited)

Microsphere ZnO nanostructures (ZnO-MNs) decorated with Ag nanoparticles (NPs) were synthesized t... more Microsphere ZnO nanostructures (ZnO-MNs) decorated with Ag nanoparticles (NPs) were synthesized through facile one-pot solvothermal reaction in TEA media. In this process, the TEA was utilized to terminate the growth of ZnO nanoparticles which form the ZnO-MNs and also act as a capping agent. A series of characterizations including X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectrum shows the accomplished combination of Ag-NPs with ZnO-MNs. Moreover, the photocatalytic studies with Methylene Blue (MB) as model reaction exhibited that Ag modification in certain amount could greatly improve the photocatalytic performance of ZnO-MNs compared to the undoped ZnO-MNs.

Research paper thumbnail of Electronic device characteristics and charge conduction mechanisms of Single-layer OLED based on Alq3, TPD:Alq3 and TPD:PBD:Alq3 blend system

Journal of Nanoelectronics and Optoelectronics. (ISI-cited)

Three single layer OLED devices which are ITO/PEDOT:PSS/Alq 3 /Al, ITO/PEDOT:PSS/TPD:Alq 3 /Al an... more Three single layer OLED devices which are ITO/PEDOT:PSS/Alq 3 /Al, ITO/PEDOT:PSS/TPD:Alq 3 /Al and ITO/PEDOT:PSS/TPD:PBD:Alq 3 /Al have been fabricated. The thickness of pure thin film of Alq 3 , and blended thin films of TPD:Alq 3 and TPD:PBD:Alq 3 which form the emission layer of the single layer OLED devices is 80 nm. Structural properties of Alq 3 , TPD:Alq 3 and TPD:PBD:Alq 3 thin films were characterized by Fourier Transform Infrared (FTIR) and X-Ray diffraction (XRD). The FTIR spectrum of TPD:PBD:Alq 3 blend shows significant overlap from each vibration mode of TPD, PBD and Alq 3 molecules. It is found that a broad diffraction hump located at around 2 ≈ 25 in the XRD spectra, indicating that all pure and blends materials have formed amorphous thin films. The electronics parameters such as ideality factor n, barrier height b , saturation current, I o and series resistance R s are extracted from the conventional ln I-V , Cheung's functions and Fowler Nordheim (FN) function. The trend of the evaluated parameters calculated from Cheung's and Fowler Nordheim (FN) methods are found to be consistent with those calculated from the conventional I-V method. In the double logarithmic I-V plots, three distinct regions based on the slope of the plots have been identified and the transport mechanisms are discussed and explained.

Research paper thumbnail of Effect of transition metal dopant on the optoelectronics properties of zinc oxide thin film

Journal of Nanoelectronics and Optoelectronics. (ISI-cited)

The influence of nickel (Ni) dopant concentration of Ni-doped zinc oxide (ZnO) derived from sol g... more The influence of nickel (Ni) dopant concentration of Ni-doped zinc oxide (ZnO) derived from sol gel technique on surface morphology, optical, luminescence, electrical and electronic transition properties were investigated. Surface morphology image of the thin films were obtained by using emission scanning electron microscope (FESEM). Optical and luminescence properties of the thin films were characterized by using Ultraviolet/Visible/Near infrared (UV/Vis/NIR) and photoluminescence (PL) spectrometer, respectively. Sheet resistance and work function of the thin films were determined by using four point probe and photoemission spectrometer, respectively. The thin film exhibits a smooth surface with grain size of 40-80 nm which depends on dopant concentration. All samples show a high transparency; over 80% in the visible range. Optical properties of the films are not affected so much by Ni dopant concentration. The sheet resistance of the thin film increases with the increase in Ni dopant concentration. The work function of the films obtained decreases after Ni dopant concentration exceeds 1%.

Research paper thumbnail of Electroluminescence and negative differential resistance studies of TPD:PBD:Alq3 blend organic-light emitting diodes

Bulletin of Materials Science. (Accepted) (ISI-cited)

Ternary system of single layer organic light-emitting diodes (OLEDs) were fabricated containing T... more Ternary system of single layer organic light-emitting diodes (OLEDs) were fabricated containing Tris(8-hydroxyquinoline) aluminum (Alq3) blended with N,N'-diphenyl-N,N'bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) and 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) small molecules. Electroluminescence (EL) properties were investigated with respect to blend systems. Significant improvement in turn-on voltage and luminance intensity was observed by employing the blends technique. Negative differential resistance (NDR) characteristics observed at a low voltage region in blended OLED is related to the generation of guest hopping side (GHS) and phonon scattering phenomenon. However, luminescence of the devices is not altered by the NDR effect.

Research paper thumbnail of Blending effect on small molecule based OLED

Optoelectronics And Advanced Materials – Rapid Communications (ISI-cited)

Organic light-emitting diodes (OLEDs) were fabricated containing guest molecule of Tris(8-hydroxy... more Organic light-emitting diodes (OLEDs) were fabricated containing guest molecule of Tris(8-hydroxyquinoline) aluminium (Alq3) blend with host molecules of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) and 2-(4biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) small molecules. Optical, photoluminescence (PL), electroluminescence (EL) and impedance properties were investigated with respect to blend systems. Optical energy gap and PL intensity obtained increased in blend systems attributed to high energy transfer from host to guest molecules. Luminance and current efficiency were enhanced for blended OLEDs as compared to that of pure Alq3, related to high accumulation of charge carrier and exciton recombination in guest. Impedance spectra show conductivity of OLEDs was improved by blending technique.

Research paper thumbnail of Annealing Effect on Small Molecules Blend Organic Light-Emitting Diodes

Advanced Materials Research (Scopus cited)

This research work investigates the influence of the annealing process upon the performance of ph... more This research work investigates the influence of the annealing process upon the performance of photo-emissive layer of organic light-emitting diode (OLED). The photo-emissive layer consists of a ternary blend of N, N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'diamine (TPD), 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) and tris-8-hydroxyquinoline (Alq3), to produce TPD:PBD:Alq3 (at 1:1:1 ratio) blend thin films, in which the material solutions are deposited onto clean substrate via spin-coating method. The samples were annealed at 100 o C in 10, 20 and 30 minute of time in an open-air condition. The results reveal that the annealing process at 10 minutes produces an optimum performance of the ternary OLED.

Research paper thumbnail of Study and fabrication of europium picrate triethylene glycol complex

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy (ISI-cited)

a b s t r a c t A mononuclear of [Eu(NO 3 )(Pic)(H 2 O) 2 (EO3)](Pic)·(0.73)H 2 O complex, where ... more a b s t r a c t A mononuclear of [Eu(NO 3 )(Pic)(H 2 O) 2 (EO3)](Pic)·(0.73)H 2 O complex, where EO3 = trietraethylene glycol and Pic = picrate anion, shows a red emission when used as an active layer in a single layer of ITO/EO3-Eu-Pic/Al configuration. The crystal structure of the complex consists of [Eu(NO 3 )(Pic)(H 2 O) 2 (EO3)] + cation and [Pic] − anion.

Research paper thumbnail of The influence of Sn doping on the structural and morphology of ZnO nanowire deposited using PVD technique

JURNAL FIZIK MALAYSIA

The thin film of ZnO nanowire and Sn-doped ZnO nanobelt were fabricated through physical vapor de... more The thin film of ZnO nanowire and Sn-doped ZnO nanobelt were fabricated through physical vapor deposition (PVD) technique on Si (111) substrate. X-ray Diffaction (XRD) and Energy Dispersive X-ray (EDX) studies demonstrated that there are significant change in crystal structure and content of the elements as the nano structures change from nanowire to nanobelt when the ZnO thin film was doped with Sn. The morphological change in the shape of the nanostructure from nanowire to nanobelt and to nanoring can be observed from the Field Effect Scanning Electron Microscopy (FESEM) images. The high polarity of Sndoped ZnO has caused the formation of the spiral structure in the nanostructure of the ZnO thin film.

Research paper thumbnail of Optical, Structural and Electrical Study of Organic Light Emitting Diode (OLED)Based on MEH∕PPV:C60 CompositeOptical, Structural and Electrical Study of Organic Light Emitting Diode (OLED) Based on MEH/PPV:C60 Composite

American Institute of Physics (Conference Proceeding)

The influence of C 60 on absorption, photoluminescence (PL) and luminescence properties of a sing... more The influence of C 60 on absorption, photoluminescence (PL) and luminescence properties of a single layer MEH/PPV:C 60 organic light emitting diode has been investigated. The MEH/PPV molecules were mixed with 5wt%, 20wt% and 50wt% of C60 and stirred in toluene. The emissive layer of OLED was deposited the MEH/PPV: C 60 mixture solution on cleaned ITO by spin-coating at 3000rpm in 40s. The absorption and PL characterization of the spin-cast films were carried out using UV/Vis/NIR spectrometer (Jasco V-570) and luminescence spectrometer (Perkin Elmer, LS50B), respectively. The current-voltage (I-V) properties of OLED were obtained using source measurement unit (SMU) (2400, Keithley Instrument).

Research paper thumbnail of Fabrication and Characterization of New Hybrid Organic Light Emitting Diode (OLED): Europiumpicratetriethylene oxide ComplexFabrication and Characterization of New Hybrid Organic Light Emitting Diode (OLED): Europium-picrate-triethylene oxide Complex

American Institute of Physics (Conference Proceeding)

Thin-film light emitting devices based on organic materials have attracted vast interest in appli... more Thin-film light emitting devices based on organic materials have attracted vast interest in applications such as light emitting diode (LED) and flat-panel display. The organic material can be attached with inorganic material to enhance the performance of the light emitting device. A hybrid OLED based on a new complex of europium picrate (Eu-pic) with triethylene oxide (EO3) ligand is fabricated. The OLED is fabricated by using spin coating technique with acetone as the solvent and aluminum as the top electrode. The optical, photoluminescence (PL) and electrical properties of the sample are carried out by UV-Vis spectroscopy (Jasco V-750), luminescence spectroscopy (Perkin Elmer LS-500) and source measure unit (SMU) (Keithly), respectively.

Research paper thumbnail of Fabrication and Characterization of Organic Light-Emitting Diodes Containing Small Molecules Blends as Emissive Layer

Organic light-emitting diodes (OLEDs) were fabricated containing guest molecule of Tris(8-hydroxy... more Organic light-emitting diodes (OLEDs) were fabricated containing guest molecule of Tris(8-hydroxyquinoline) aluminum (Alq 3 ) blend with host molecules of N,N'-diphenyl-N,N'-bis(3methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) and 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) small molecules. Optical, photoluminescence (PL) and electroluminescence (EL) properties were investigated with respect to blend systems. The obtained optical energy gap and PL intensity in the blend systems increased due to the transfer of high energy from the host to guest molecules. Luminance and current efficiency were enhanced for blended OLEDs as compared to that of pure Alq 3 , related to high exiton recombination in guest caused by high injection and accumulation of charge carrier.

Research paper thumbnail of Annealing Effect on Small Molecules Blend Organic Light-Emitting Diodes

This research work investigates the influence of the annealing process upon the performance of ph... more This research work investigates the influence of the annealing process upon the performance of photo-emissive layer of organic light-emitting diode (OLED). The photo-emissive layer consists of a ternary blend of N, N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'diamine (TPD), 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) and tris-8-hydroxyquinoline (Alq3), to produce TPD:PBD:Alq3 (at 1:1:1 ratio) blend thin films, in which the material solutions are deposited onto clean substrate via spin-coating method. The samples were annealed at 100 o C in 10, 20 and 30 minute of time in an open-air condition. The results reveal that the annealing process at 10 minutes produces an optimum performance of the ternary OLED.

Research paper thumbnail of Structural and Optical Properties of Nickel-doped and Undoped Zinc Oxide Thin Films Deposited by sol-gel method

Research paper thumbnail of Influence of doping on optical, structural, luminescence on single layer OLED based on Alq3

Research paper thumbnail of Effect of Ligands on Optical and Photoluminescence Properties of Hybrid Europium Complexes OLEDS

Research paper thumbnail of Optical, Photoluminescence and Electrical Properties of OLED Based on Europium Complex with tri-ethylene Oxide (EO3) ligand