saeed Mohammadi | Ferdowsi University of Mashhad (original) (raw)

saeed Mohammadi

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Papers by saeed Mohammadi

Research paper thumbnail of High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

Research paper thumbnail of 3-D Integrated Inductors and Transformers on Liquid Crystal Polymer Substrate

2006 IEEE MTT-S International Microwave Symposium Digest, 2006

Research paper thumbnail of High Performance 3-D Helical RF Transformers

2007 IEEE/MTT-S International Microwave Symposium, 2007

Research paper thumbnail of High-Q Differential Inductors for RFIC Design

33rd European Microwave Conference, 2003, 2003

Research paper thumbnail of SiGe/Si power HBTs for X- to K-band applications

Microwave, MTT-S International Symposium, 2002

High performance power SiGe/Si HBTs at X-band (8.4 GHz), Ku-band (12.6 GHz) and K-band (18 GHz) h... more High performance power SiGe/Si HBTs at X-band (8.4 GHz), Ku-band (12.6 GHz) and K-band (18 GHz) have been demonstrated. Under continuous wave operation, a single 20-finger Si/Si0.75Ge0.25/Si (emitter area of 1200 μm2) HBT, biased in class AB, delivers 28.5 dBm (700 mW) of RF output power at X-band, 25.5 dBm (350 mW) at Ku-band and 22.5 dBm (180 mW) at

Research paper thumbnail of Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver for Long Haul Telecommunication

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007

Research paper thumbnail of Toroidal inductors for integrated radio frequency and microwave circuits

Microwave, MTT-S International Symposium, 2003

A toroidal inductor has been developed that confines flux and eliminates eddy currents. A printed... more A toroidal inductor has been developed that confines flux and eliminates eddy currents. A printed circuit and micromachined RFIC-compatible implementations of the inductor are presented.

Research paper thumbnail of Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics

Solid-State Electronics, 2000

Research paper thumbnail of Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology

Solid-State Electronics, 2000

Research paper thumbnail of Multiwafer vertical interconnects for three-dimensional integrated circuits

IEEE Transactions on Microwave Theory and Techniques, 2006

Research paper thumbnail of Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs

IEEE Transactions on Electron Devices, 2000

Research paper thumbnail of Self-Aligned Wafer-Level Integration Technology With High-Density Interconnects and Embedded Passives

IEEE Transactions on Advanced Packaging, 2007

Research paper thumbnail of Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits

IEEE Transactions on Advanced Packaging, 2009

Research paper thumbnail of 1.3–1.55-$\mu$m CMOS/InP Optoelectronic Receiver Using a Self-Aligned Wafer Level Integration Technology

IEEE Photonics Technology Letters, 2007

Research paper thumbnail of A Wideband Compact Model for Integrated Inductors

IEEE Microwave and Wireless Components Letters, 2006

Research paper thumbnail of A MEMS reconfigurable matching network for a class AB amplifier

IEEE Microwave and Wireless Components Letters, 2003

Research paper thumbnail of An X-band high-power amplifier using SiGe/Si HBT and lumped passive components

IEEE Microwave and Wireless Components Letters, 2001

Research paper thumbnail of Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors

Electronics Letters, 2001

Research paper thumbnail of Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters, 2007

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) wi... more Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211 and 263mA∕mm are obtained for 1μm gate-length Al2O3 MOS-HEMTs with 3 and 6nm thick gate oxide, respectively. C-V characteristic shows negligible hysteresis and frequency dispersion. The gate leakage current density of the MOS-HEMTs is 3–5 orders of magnitude lower than the conventional HEMTs under similar bias conditions. The drain current on-off ratio of MOS-HEMTs is ∼3×103 with a subthreshold swing of 90mV/decade. A maximum cutoff frequency (fT) of 27.3GHz and maximum oscillation frequency (fmax) of 39.9GHz and an effective channel mobility of 4250cm2∕Vs are measured for the 1μm gate-length Al2O3 MOS-HEMT with 6nm gate oxide. Hooge’s constant measured by low frequency noise spectral density characterization is 3.7×10−5 for the same device.

Research paper thumbnail of High performance micro-machined inductors on CMOS substrate

IEEE MTT-S International Microwave Symposium Digest, 2005.

Research paper thumbnail of High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

Research paper thumbnail of 3-D Integrated Inductors and Transformers on Liquid Crystal Polymer Substrate

2006 IEEE MTT-S International Microwave Symposium Digest, 2006

Research paper thumbnail of High Performance 3-D Helical RF Transformers

2007 IEEE/MTT-S International Microwave Symposium, 2007

Research paper thumbnail of High-Q Differential Inductors for RFIC Design

33rd European Microwave Conference, 2003, 2003

Research paper thumbnail of SiGe/Si power HBTs for X- to K-band applications

Microwave, MTT-S International Symposium, 2002

High performance power SiGe/Si HBTs at X-band (8.4 GHz), Ku-band (12.6 GHz) and K-band (18 GHz) h... more High performance power SiGe/Si HBTs at X-band (8.4 GHz), Ku-band (12.6 GHz) and K-band (18 GHz) have been demonstrated. Under continuous wave operation, a single 20-finger Si/Si0.75Ge0.25/Si (emitter area of 1200 μm2) HBT, biased in class AB, delivers 28.5 dBm (700 mW) of RF output power at X-band, 25.5 dBm (350 mW) at Ku-band and 22.5 dBm (180 mW) at

Research paper thumbnail of Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver for Long Haul Telecommunication

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007

Research paper thumbnail of Toroidal inductors for integrated radio frequency and microwave circuits

Microwave, MTT-S International Symposium, 2003

A toroidal inductor has been developed that confines flux and eliminates eddy currents. A printed... more A toroidal inductor has been developed that confines flux and eliminates eddy currents. A printed circuit and micromachined RFIC-compatible implementations of the inductor are presented.

Research paper thumbnail of Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics

Solid-State Electronics, 2000

Research paper thumbnail of Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology

Solid-State Electronics, 2000

Research paper thumbnail of Multiwafer vertical interconnects for three-dimensional integrated circuits

IEEE Transactions on Microwave Theory and Techniques, 2006

Research paper thumbnail of Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs

IEEE Transactions on Electron Devices, 2000

Research paper thumbnail of Self-Aligned Wafer-Level Integration Technology With High-Density Interconnects and Embedded Passives

IEEE Transactions on Advanced Packaging, 2007

Research paper thumbnail of Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits

IEEE Transactions on Advanced Packaging, 2009

Research paper thumbnail of 1.3–1.55-$\mu$m CMOS/InP Optoelectronic Receiver Using a Self-Aligned Wafer Level Integration Technology

IEEE Photonics Technology Letters, 2007

Research paper thumbnail of A Wideband Compact Model for Integrated Inductors

IEEE Microwave and Wireless Components Letters, 2006

Research paper thumbnail of A MEMS reconfigurable matching network for a class AB amplifier

IEEE Microwave and Wireless Components Letters, 2003

Research paper thumbnail of An X-band high-power amplifier using SiGe/Si HBT and lumped passive components

IEEE Microwave and Wireless Components Letters, 2001

Research paper thumbnail of Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors

Electronics Letters, 2001

Research paper thumbnail of Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters, 2007

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) wi... more Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211 and 263mA∕mm are obtained for 1μm gate-length Al2O3 MOS-HEMTs with 3 and 6nm thick gate oxide, respectively. C-V characteristic shows negligible hysteresis and frequency dispersion. The gate leakage current density of the MOS-HEMTs is 3–5 orders of magnitude lower than the conventional HEMTs under similar bias conditions. The drain current on-off ratio of MOS-HEMTs is ∼3×103 with a subthreshold swing of 90mV/decade. A maximum cutoff frequency (fT) of 27.3GHz and maximum oscillation frequency (fmax) of 39.9GHz and an effective channel mobility of 4250cm2∕Vs are measured for the 1μm gate-length Al2O3 MOS-HEMT with 6nm gate oxide. Hooge’s constant measured by low frequency noise spectral density characterization is 3.7×10−5 for the same device.

Research paper thumbnail of High performance micro-machined inductors on CMOS substrate

IEEE MTT-S International Microwave Symposium Digest, 2005.

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