Dr. SUSHANTA BORDOLOI | NIT Mizoram (original) (raw)

Papers by Dr. SUSHANTA BORDOLOI

Renewable and Sustainable Energy Reviews

Renewable and Sustainable Energy Reviews, 2023

2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT)

Journal of physics, Mar 1, 2022

Electric field initiates various failure mechanism in an III-N based AlGaN/GaN HEMTs. The materia... more Electric field initiates various failure mechanism in an III-N based AlGaN/GaN HEMTs. The material properties of the GaN-HEMTs under the influence of electric field activates physical mechanisms like converse piezoelectric effect (CPE), crack/defect migration, trapping, which deteriorate the electrical behaviour of the device leading to permanent failure. The drain side of the gate edge has the highest electric field and is the hub of all the reliability concerns in a GaN HEMT, which is mitigated with field plate (FP) technology. However, the FP edge is now subjected to these degradation phenomena. The present work aims at suppressing the strong electric fields at the FP gate edge using an embedded metal layer that shields the electric field from reaching the gate edge. Calibrated numerical simulations have been carried out on the proposed device structure to observe the viability in consideration. It is found that the electric field at the FP edge reduces by around 3%. Also, CPE and electron temperature reduce by 20%, and 14%, respectively. Since the proposed device structure can considerably mitigate the electric field, CPE, and electron temperature, it is expected that it will pave a path for improved and reliable devices in the future.

Advances in sustainability science and technology, 2022

Communications in Computer and Information Science, 2017

TCAD simulation of electronic device has always been the basic approach to understand solid state... more TCAD simulation of electronic device has always been the basic approach to understand solid state electronics and to frame road-map for the evolution of future technology. Design of devices on these materials require better understanding of the physical insights to the internals of the device structure. In such a scenario, TCAD tool can help to visualize internal dynamics of carriers and fields in the device structure, thus helping to improve them further. Device structures are evolving continuously leading to an increase in complexity of computation of simulation. There is an increasing challenge to these simulators to improvise compact device models, whereby generating precise results. The responsibility of TCAD designers is ever increasing to develop improved solvers featuring better predictive capabilities. In this work, an effort has been made to compare the performance of an FEM based proposed simulator with conventional available device simulator. A simple pn junction diode is designed in both the simulators and a comparison of different electrical properties has been done by incorporating similar models and exactly same material parameters.

2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID), 2019

GaN based transistors are subjected to current collapse. In this work a unique solution to this i... more GaN based transistors are subjected to current collapse. In this work a unique solution to this issue is presented by using a buried n-type doped region in the bulk region below the 2DEG channel. The proposed structure is named as "Buried n-doped Gate Injection Transistor (BNGIT)". TCAD simulation of the structure shows that this added layer increases the electron density in the channel just above it. Hence the loss of electrons due to traps can be compensated which results in current collapse free operation.

Intelligent Data Communication Technologies and Internet of Things, 2019

With the advancement in technology, the Internet has become an essential part of our lives. The c... more With the advancement in technology, the Internet has become an essential part of our lives. The concept of IoT has caught the attention of industry, society, and academy by enhancing our day to day activities. In this work, the Electronic Voting Machine (EVM) using IoT is presented. As the process of election demands to be fair and transparent, the fingerprint-based EVM can be one of the alternatives. The work focusses on the concept of an online electoral system for election, where the voting information is shared instantly, and mechanism had been put in place to detect a proxy vote. A hardware prototype is developed and to evaluate the performance of the proposed system, field trials were conducted.

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects, 2019

In this chapter, we will look into some of the reliability concern in first few sections and fi n... more In this chapter, we will look into some of the reliability concern in first few sections and fi nally propose a simulation (numerical) framework along with model development to understand these effects.

RSC Advances, 2021

Correction for ‘Realization of multi-configurable logic gate behaviour on fluorescence switching ... more Correction for ‘Realization of multi-configurable logic gate behaviour on fluorescence switching signalling of naphthalene diimide congeners’ by Hridoy Jyoti Bora et al., RSC Adv., 2021, 11, 35274–35279. DOI: 10.1039/d1ra06728a.

2021 IEEE 4th International Conference on Computing, Power and Communication Technologies (GUCON), 2021

Converse piezoelectric strain leads to degradations such as structural deformation, creation of t... more Converse piezoelectric strain leads to degradations such as structural deformation, creation of traps, etc. in AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, an approach to reduce the converse piezoelectric strain in the AlGaN barrier layer is presented by adopting a filleted gate (FG) geometry HEMT. It is observed that in FG HEMT, the peak vertical electric field, and vertical converse piezoelectric strain reduces by almost 25%, while electron temperature reduces by 20% in comparison to the traditionally used rectangular gate HEMT. It is also observed that the reduction in peak vertical electric field, and peak vertical converse piezoelectric strain is more than staircase gate geometry device. Thus, the proposed FG HEMT is expected to be a potential candidate which can tackle converse piezoelectric strain induced damages in AlGaN/GaN HEMT devices.

RSC Advances, 2021

The implementation of functional congeners of naphthalene diimide experiencing fluorescence ON/OF... more The implementation of functional congeners of naphthalene diimide experiencing fluorescence ON/OFF switching signalling in response to external stimuli, is suitably realized to construct multi-configurable molecular logic gates.

Journal of Electronic Materials, 2020

Journal of Physics: Conference Series, 2016

Endless scaling of planar MOSFET over the past four decades has delivered proliferating transisto... more Endless scaling of planar MOSFET over the past four decades has delivered proliferating transistor density and performance to integrated circuits (ICs) at the cost of increase in short channel effects (SCEs). As a result of narrow channel lengths in deeply scaled MOSFETs, off-state leakage current happens to increase the power requirement of device by forcing drain potential to lose its leverage over the electrostatics of channel. Multigate devices (Double Gate FET, FinFET) promise better immunity to SCEs by concealing the issues caused by scaling of planar technology, and also exhibits better scalability with increased level of integration. In this paper, a study on modeling and simulation of multiple-gate MOSFETs is presented. This paper describes the development in semiconductor technology from planar to non-planar devices, benefits of multigate MOSFETs over previous technologies. Effects of varying different parameters (such as Fin thickness, Fin height, use of different gate material etc.) in multigate (specially FinFET) devices is also described. Improvement in device physics models along with technology, and importance of computational physics for efficient modeling of nanoscale devices is presented.

2015 1st Conference on Power, Dielectric and Energy Management at NERIST (ICPDEN), 2015

The coulomb counting method gives vital information for determination of state-of-charge (SOC) of... more The coulomb counting method gives vital information for determination of state-of-charge (SOC) of battery, which in turn is a useful method for range determination of an electric vehicle. By investigating the charging and discharging characteristics for a number of cycles of operation, coulombic efficiency of the battery is determined. The variation observed in coulombic efficiency with respect to the number of cycle was empirically modeled with the help of polynomial as well as exponential curve fitting method in Matlab. Models thus developed was again validated for the later cycles of operation. The empirical model derived with the polynomial curve fitting was found to be the best suited for the requirement of the range detection system of an electric vehicle. A hardware related to this work is also developed.

IEEE Transactions on Device and Materials Reliability, 2022

Electric field in a device varies as it switches between ON and OFF states. These states have dif... more Electric field in a device varies as it switches between ON and OFF states. These states have different intensities of electric field and carrier density. The regions having high electric field affects reliability of a GaN-HEMT. In a AlGaN/GaN HEMT, degradation primarily initiates as a result of electric field crowding near its edges. The present work aims at suppressing high electric field in the SEMI-ON state at the field plate edge by incorporating a SiO2 pocket at its edge. Numerical analysis is performed using a calibrated setup to investigate viability and performance of the proposed device. It is found that the electric field and electron temperature in the SEMI-ON state reduce significantly by incorporating a SiO2 pocket around the field plate edge in the drain access region. For the device having SiO2 pocket with diamond and passivation layer thickness kept at 30 nm each, the electric field, carrier temperature, and self heating reduces by 43%, 20%, and 13%, respectively at the field plate edge along with 47% reduction in the thermal resistance.

The coulomb counting method gives vital information for determination of state-of-charge (SOC) of... more The coulomb counting method gives vital information for determination of state-of-charge (SOC) of battery, which in turn is a useful method for range determination of an electric vehicle. By investigating the charging and discharging characteristics for a number of cycles of operation, coulombic efficiency of the battery is determined. The variation observed in coulombic efficiency with respect to the number of cycle was empirically modeled with the help of polynomial as well as exponential curve fitting method in Matlab. Models thus developed was again validated for the later cycles of operation. The empirical model derived with the polynomial curve fitting was found to be the best suited for the requirement of the range detection system of an electric vehicle. A hardware related to this work is also developed.

Renewable and Sustainable Energy Reviews

Renewable and Sustainable Energy Reviews, 2023

2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT)

Journal of physics, Mar 1, 2022

Electric field initiates various failure mechanism in an III-N based AlGaN/GaN HEMTs. The materia... more Electric field initiates various failure mechanism in an III-N based AlGaN/GaN HEMTs. The material properties of the GaN-HEMTs under the influence of electric field activates physical mechanisms like converse piezoelectric effect (CPE), crack/defect migration, trapping, which deteriorate the electrical behaviour of the device leading to permanent failure. The drain side of the gate edge has the highest electric field and is the hub of all the reliability concerns in a GaN HEMT, which is mitigated with field plate (FP) technology. However, the FP edge is now subjected to these degradation phenomena. The present work aims at suppressing the strong electric fields at the FP gate edge using an embedded metal layer that shields the electric field from reaching the gate edge. Calibrated numerical simulations have been carried out on the proposed device structure to observe the viability in consideration. It is found that the electric field at the FP edge reduces by around 3%. Also, CPE and electron temperature reduce by 20%, and 14%, respectively. Since the proposed device structure can considerably mitigate the electric field, CPE, and electron temperature, it is expected that it will pave a path for improved and reliable devices in the future.

Advances in sustainability science and technology, 2022

Communications in Computer and Information Science, 2017

TCAD simulation of electronic device has always been the basic approach to understand solid state... more TCAD simulation of electronic device has always been the basic approach to understand solid state electronics and to frame road-map for the evolution of future technology. Design of devices on these materials require better understanding of the physical insights to the internals of the device structure. In such a scenario, TCAD tool can help to visualize internal dynamics of carriers and fields in the device structure, thus helping to improve them further. Device structures are evolving continuously leading to an increase in complexity of computation of simulation. There is an increasing challenge to these simulators to improvise compact device models, whereby generating precise results. The responsibility of TCAD designers is ever increasing to develop improved solvers featuring better predictive capabilities. In this work, an effort has been made to compare the performance of an FEM based proposed simulator with conventional available device simulator. A simple pn junction diode is designed in both the simulators and a comparison of different electrical properties has been done by incorporating similar models and exactly same material parameters.

2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID), 2019

GaN based transistors are subjected to current collapse. In this work a unique solution to this i... more GaN based transistors are subjected to current collapse. In this work a unique solution to this issue is presented by using a buried n-type doped region in the bulk region below the 2DEG channel. The proposed structure is named as "Buried n-doped Gate Injection Transistor (BNGIT)". TCAD simulation of the structure shows that this added layer increases the electron density in the channel just above it. Hence the loss of electrons due to traps can be compensated which results in current collapse free operation.

Intelligent Data Communication Technologies and Internet of Things, 2019

With the advancement in technology, the Internet has become an essential part of our lives. The c... more With the advancement in technology, the Internet has become an essential part of our lives. The concept of IoT has caught the attention of industry, society, and academy by enhancing our day to day activities. In this work, the Electronic Voting Machine (EVM) using IoT is presented. As the process of election demands to be fair and transparent, the fingerprint-based EVM can be one of the alternatives. The work focusses on the concept of an online electoral system for election, where the voting information is shared instantly, and mechanism had been put in place to detect a proxy vote. A hardware prototype is developed and to evaluate the performance of the proposed system, field trials were conducted.

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects, 2019

In this chapter, we will look into some of the reliability concern in first few sections and fi n... more In this chapter, we will look into some of the reliability concern in first few sections and fi nally propose a simulation (numerical) framework along with model development to understand these effects.

RSC Advances, 2021

Correction for ‘Realization of multi-configurable logic gate behaviour on fluorescence switching ... more Correction for ‘Realization of multi-configurable logic gate behaviour on fluorescence switching signalling of naphthalene diimide congeners’ by Hridoy Jyoti Bora et al., RSC Adv., 2021, 11, 35274–35279. DOI: 10.1039/d1ra06728a.

2021 IEEE 4th International Conference on Computing, Power and Communication Technologies (GUCON), 2021

Converse piezoelectric strain leads to degradations such as structural deformation, creation of t... more Converse piezoelectric strain leads to degradations such as structural deformation, creation of traps, etc. in AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, an approach to reduce the converse piezoelectric strain in the AlGaN barrier layer is presented by adopting a filleted gate (FG) geometry HEMT. It is observed that in FG HEMT, the peak vertical electric field, and vertical converse piezoelectric strain reduces by almost 25%, while electron temperature reduces by 20% in comparison to the traditionally used rectangular gate HEMT. It is also observed that the reduction in peak vertical electric field, and peak vertical converse piezoelectric strain is more than staircase gate geometry device. Thus, the proposed FG HEMT is expected to be a potential candidate which can tackle converse piezoelectric strain induced damages in AlGaN/GaN HEMT devices.

RSC Advances, 2021

The implementation of functional congeners of naphthalene diimide experiencing fluorescence ON/OF... more The implementation of functional congeners of naphthalene diimide experiencing fluorescence ON/OFF switching signalling in response to external stimuli, is suitably realized to construct multi-configurable molecular logic gates.

Journal of Electronic Materials, 2020

Journal of Physics: Conference Series, 2016

Endless scaling of planar MOSFET over the past four decades has delivered proliferating transisto... more Endless scaling of planar MOSFET over the past four decades has delivered proliferating transistor density and performance to integrated circuits (ICs) at the cost of increase in short channel effects (SCEs). As a result of narrow channel lengths in deeply scaled MOSFETs, off-state leakage current happens to increase the power requirement of device by forcing drain potential to lose its leverage over the electrostatics of channel. Multigate devices (Double Gate FET, FinFET) promise better immunity to SCEs by concealing the issues caused by scaling of planar technology, and also exhibits better scalability with increased level of integration. In this paper, a study on modeling and simulation of multiple-gate MOSFETs is presented. This paper describes the development in semiconductor technology from planar to non-planar devices, benefits of multigate MOSFETs over previous technologies. Effects of varying different parameters (such as Fin thickness, Fin height, use of different gate material etc.) in multigate (specially FinFET) devices is also described. Improvement in device physics models along with technology, and importance of computational physics for efficient modeling of nanoscale devices is presented.

2015 1st Conference on Power, Dielectric and Energy Management at NERIST (ICPDEN), 2015

The coulomb counting method gives vital information for determination of state-of-charge (SOC) of... more The coulomb counting method gives vital information for determination of state-of-charge (SOC) of battery, which in turn is a useful method for range determination of an electric vehicle. By investigating the charging and discharging characteristics for a number of cycles of operation, coulombic efficiency of the battery is determined. The variation observed in coulombic efficiency with respect to the number of cycle was empirically modeled with the help of polynomial as well as exponential curve fitting method in Matlab. Models thus developed was again validated for the later cycles of operation. The empirical model derived with the polynomial curve fitting was found to be the best suited for the requirement of the range detection system of an electric vehicle. A hardware related to this work is also developed.

IEEE Transactions on Device and Materials Reliability, 2022

Electric field in a device varies as it switches between ON and OFF states. These states have dif... more Electric field in a device varies as it switches between ON and OFF states. These states have different intensities of electric field and carrier density. The regions having high electric field affects reliability of a GaN-HEMT. In a AlGaN/GaN HEMT, degradation primarily initiates as a result of electric field crowding near its edges. The present work aims at suppressing high electric field in the SEMI-ON state at the field plate edge by incorporating a SiO2 pocket at its edge. Numerical analysis is performed using a calibrated setup to investigate viability and performance of the proposed device. It is found that the electric field and electron temperature in the SEMI-ON state reduce significantly by incorporating a SiO2 pocket around the field plate edge in the drain access region. For the device having SiO2 pocket with diamond and passivation layer thickness kept at 30 nm each, the electric field, carrier temperature, and self heating reduces by 43%, 20%, and 13%, respectively at the field plate edge along with 47% reduction in the thermal resistance.

The coulomb counting method gives vital information for determination of state-of-charge (SOC) of... more The coulomb counting method gives vital information for determination of state-of-charge (SOC) of battery, which in turn is a useful method for range determination of an electric vehicle. By investigating the charging and discharging characteristics for a number of cycles of operation, coulombic efficiency of the battery is determined. The variation observed in coulombic efficiency with respect to the number of cycle was empirically modeled with the help of polynomial as well as exponential curve fitting method in Matlab. Models thus developed was again validated for the later cycles of operation. The empirical model derived with the polynomial curve fitting was found to be the best suited for the requirement of the range detection system of an electric vehicle. A hardware related to this work is also developed.