Amish Joshi | National Physical Laboratory (original) (raw)
Papers by Amish Joshi
Indian Journal of Chemistry Sect a Inorganic Physical Theoretical Analytical, Jan 12, 2009
In this study, we report on investigations of the electronic structure of SrTiO$_3$ annealed at t... more In this study, we report on investigations of the electronic structure of SrTiO$_3$ annealed at temperature ranging between 550 and 840$^\circ$C in an ultrahigh vacuum. Annealing induced oxygen vacancies (O$_{vac}$) impart considerable changes in the electronic structure of SrTiO$_3$. Using core-level photoemission spectroscopy, we have studied the chemical potential shift ($\Delta\mu$) as a function of annealing temperature. The result shows that the chemical potential monotonously increases with electron doping in SrTiO$_{3-\delta}$. The monotonous increase of the chemical potential rules out the existence of electronic phase separation in the sample. Using valence band photoemission, we have demonstrated the formation of a low density of states at the near Fermi level electronic spectrum of SrTiO$_{3-\delta}$. The gap-states were observed by spectral weight transfer over a large energy scale of the stoichiometric band gap of SrTiO$_3$ system leading finally to an insulator - metal transition. We have interpreted our results from the point of structural distortions induced by oxygen vacancies.
The Journal of Physical Chemistry C, 2014
Solid State Phenomena, 2013
Journal of Applied Physics, 2014
Physica B: Condensed Matter, 1999
The Journal of Physical Chemistry C, 2010
The Journal of Physical Chemistry C, 2011
The Journal of Physical Chemistry C, 2010
The Journal of Physical Chemistry B, 2011
The Journal of Physical Chemistry B, 2009
Surface and Coatings Technology, 2012
Physica C: Superconductivity, 1997
Physica C: Superconductivity, 1996
Physica C: Superconductivity, 1999
Indian Journal of Chemistry Sect a Inorganic Physical Theoretical Analytical, Jan 12, 2009
In this study, we report on investigations of the electronic structure of SrTiO$_3$ annealed at t... more In this study, we report on investigations of the electronic structure of SrTiO$_3$ annealed at temperature ranging between 550 and 840$^\circ$C in an ultrahigh vacuum. Annealing induced oxygen vacancies (O$_{vac}$) impart considerable changes in the electronic structure of SrTiO$_3$. Using core-level photoemission spectroscopy, we have studied the chemical potential shift ($\Delta\mu$) as a function of annealing temperature. The result shows that the chemical potential monotonously increases with electron doping in SrTiO$_{3-\delta}$. The monotonous increase of the chemical potential rules out the existence of electronic phase separation in the sample. Using valence band photoemission, we have demonstrated the formation of a low density of states at the near Fermi level electronic spectrum of SrTiO$_{3-\delta}$. The gap-states were observed by spectral weight transfer over a large energy scale of the stoichiometric band gap of SrTiO$_3$ system leading finally to an insulator - metal transition. We have interpreted our results from the point of structural distortions induced by oxygen vacancies.
The Journal of Physical Chemistry C, 2014
Solid State Phenomena, 2013
Journal of Applied Physics, 2014
Physica B: Condensed Matter, 1999
The Journal of Physical Chemistry C, 2010
The Journal of Physical Chemistry C, 2011
The Journal of Physical Chemistry C, 2010
The Journal of Physical Chemistry B, 2011
The Journal of Physical Chemistry B, 2009
Surface and Coatings Technology, 2012
Physica C: Superconductivity, 1997
Physica C: Superconductivity, 1996
Physica C: Superconductivity, 1999