A. M . Mansour | National Research Center (original) (raw)

Papers by A. M . Mansour

Solid State Sciences, 2020

Amorpho-structural and magnetic analysis of Al2O3–P2O5–Na2O/NiO magnetic porous nanocomposites in... more Amorpho-structural and magnetic analysis of Al2O3–P2O5–Na2O/NiO magnetic porous nanocomposites in the influence of SiO2 as a nucleating agent is studied. Concurrently, the effect of the incorporated NiO nanoparticles on the structural, morphological, optical, and magnetic characteristics of the Al2O3–P2O5–Na2O porous nanocomposites is examined. XRD and FT-IR spectroscopy indicated the successful formation of Al2O3–P2O5–Na2O crystallizes, while the incorporation of NiO/SiO2 increased the total crystalline degree. TEM-results designate an increase in particle size of the phosphate-based crystallites as the NiO/SiO2 level increases, which corresponded to the higher crystallization in the sodium aluminophosphate (Al4Na7P9O32) nanocomposite. The FT-IR results showed that these modified sol-gel reactions are a result of acid hydrolysis of the Al–O–P and Na–O–P bonds and the influence of Si–O–OH, leading to network termination by POH groups and octahedrally solvated Al atoms (with strong quadrupole interaction) with the SiOH groups. With the introduction of NiO/SiO2, the fundamental band gaps are found to be 3.89, 3.93, 3.98, and 4.05 eV for direct allowed transitions. In the case of the indirect transition, the energy of the bandgap were 3.42, 3.57, 3.63, and 4.75 with the introducing of NiO/SiO2. The saturation magnetization increased from 0.11 to 0.38 with increasing NiO content from 0.15 to 0.25%. Also, the switching field distribution (SFD) was investigated. The obtained optical and magnetic properties for Al2O3–P2O5–Na2O/NiO magnetic porous nanocomposites supported with silica which make them an excellent candidate for high-performance optics, biocompatible systems, solid-state electrolytes, fast ion-conducting materials, and opto-magnetic devices.

� (rGO)/La 0.9 Bi 0.1 FeO 3 (LBFO) nanocomposites were prepared by sol-gel method. � LFBO has a s... more � (rGO)/La 0.9 Bi 0.1 FeO 3 (LBFO) nanocomposites were prepared by sol-gel method. � LFBO has a single-phase and were homogeneously dispersed on graphene nanosheets. � rGO improves the electrical properties up to 50 wt% of rGO. � The ferromagnetic behavior was detected and an enhancement of magnetic properties with rGO. � The magnetic and electrical properties can be optimized by tuning the content of rGO. A B S T R A C T Reduced graphene oxide (rGO)/La 0.9 Bi 0.1 FeO 3 (LBFO) nanocomposites were successfully prepared. The structure , morphology, electrical and magnetic properties were investigated by X-ray diffraction, high-resolution transmission electron microscope, impedance analyzer, and vibrating sample magnetometer, respectively. Results show that perovskites LFBO has a single-phase and were homogeneously dispersed on graphene nanosheets. rGO improves the electrical properties up to 50 wt% of rGO. The ferromagnetic behavior of nanocomposites was detected and also an enhancement of its magnetic properties with rGO content. These results reveal that the magnetic and electrical properties can be optimized by tuning the content of rGO.

5 , 5-dibromo-o-cresolsulfophthalein (BCP) films were deposited on glass, quartz, and n-Si substr... more 5 , 5-dibromo-o-cresolsulfophthalein (BCP) films were deposited on glass, quartz, and n-Si substrates by using conventional thermal evaporation method. XRD studies showed that the BCP has a polycrystalline structure in powder form and a nanocrystalline structure in thin film form. The nanostructure character of BCP films is confirmed by using a high-resolution transmission electron microscope (HRTEM). Thermal stability and phase change were examined by means of thermogravimetric analysis (TGA) and the differential scanning calorimetry (DSC), respectively. Optical absorption studies of BCP films were done in the wavelength range 200-2500 nm. The films showed a direct optical energy gap of 1.89 eV. Current versus voltage (I-V) characteristics of Au/BCP/n-Si/Al were studied in darkness and in illumination modes. The device shows photoinduced charge transfer and can be used as a photodiode.

The organic 5′,5″-dibromo-o-cresolsulfophthalein (BCP) compound thin films were deposited simply ... more The organic 5′,5″-dibromo-o-cresolsulfophthalein (BCP) compound thin films were deposited simply through spin coating technique from a pre-prepared solution of different molarities. Differential thermal analysis (DSC) and thermogravimetric analysis (TGA) of the starting powder compound were investigated to obtain the thermal stability and phase transformation of the compound. The structure, morphology, and optical properties were analyzed for all the prepared films of different molarities. Structural analyses revealed the nanocrystalline composition of all the prepared thin films. The resulted thin films nanostructure feature is verified by utilizing both the field emission scanning-electron-microscope (FESEM) and the high-resolution transmission electron microscope (HRTEM). Optical absorption exploration of BCP thin films was carried out in the limit of 200-2500 nm wavelength. The results revealed no changes in optical properties with molarity change. Al/p-Si/ BCP/Au junction was prepared and investigated electrically in dark conditions and the diode parameters were extracted. The obtained diode can be employed in many applications such as rectifiers, clipper circuits, clamping circuits, reverse current protection circuits, logic gates, voltage multipliers, flexible electronics, and many other optoelectronic applications.

Copper mercury tetraiodide thin films were grown by the chemical bath deposition technique at dif... more Copper mercury tetraiodide thin films were grown by the chemical bath deposition technique at different deposition temperatures varying from 300 K to 345 K. The structural properties of the prepared Cu 2 HgI 4 thin films show that the Cu 2 HgI 4 films have a polycrystalline nature. The compositional analysis confirmed the nearly stoichiometric structure of the deposited Cu 2 HgI 4 thin films. Homogeneous and regular surface morphology, including Effect of deposition temperature on structural 463 of circular-shaped grains with a size range from 31 to 46 nm, was revealed. Thermal stability and phase transition were studied by means of thermogravimetric analysis (TGA) and differential thermal analysis (DSC), respectively. The effects of deposition temperature on the optical properties and D.C. electrical conductivity of the Cu 2 HgI 4 films have been studied. The films were found to have an indirect optical energy gap of values increases with increasing substrate temperature. The electrical conductivity increases with increasing temperature according to grain boundary trapping model.

Reproducible and good quality copper bismuth sulphide (CuBiS 2) thin layer were situated on prehe... more Reproducible and good quality copper bismuth sulphide (CuBiS 2) thin layer were situated on preheated glassy slide substrates made implementing the spraying pyrolysis approach at distinctive times of spraying 15, 30, 45, and 60 min with a fixed substrate temperature 400°C. The effect of spray time on the structural, morphology, optical and electrical benefits of the CuBiS 2 thin films produced by spray pyrolysis methodology were studied. The structure was studied by XRD methodology. The surface texture of the produced films was considered by SEM. The optical benefits of the CuBiS 2 films were inquired working with the spectrophotometric method in which the optical transmittance and reflectance beyond a wavelength range 200-2500 nm were measured. The d.c. conductivity was studied at different temperatures for all the prepared CuBiS 2 thin films.

The cu 2 s powder was prepared by low-cost hydrothermal method and was deposited as thin films by... more The cu 2 s powder was prepared by low-cost hydrothermal method and was deposited as thin films by thermal evaporation. The structural properties are explored by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The XRD shows a monoclinic polycrystalline nature of hydrothermally prepared powder, while the deposited film shows a hump corresponding to Cu 2 S nanocrystallites. HRTEM micrograph shows nanoparticles with sizes ranging from 30 to 45 nm. Based on the thermogravimetric results, the thermal kinetic parameters are calculated by application of Broido method. The optical energy band gap of the evaporated films is determined as 2.3 eV. The electrical conductivity, charge carriers concentration, carriers mobility and the magnetoresistance (MR) of the films are investigated as a function of temperature.. In MSc and PhD, the work was about studying the structural, optical and electrical transport properties of organic thin films for solar cell applications. In post-doctoral Structural, optical and galvanomagnetical properties 273 research, he extended his work to include also the preparation and characterisation of inorganic nanoparticles for the same purpose. He obtained seven prizes and three certificates of appreciation from his country. He travelled to attend several conferences in the field of solar cells and he travelled for a scientific mission to France for nine months in the same field of solar cells.

We used a green sol-gel synthesis method to fabricate a novel nanoporous copper aluminosilicate (... more We used a green sol-gel synthesis method to fabricate a novel nanoporous copper aluminosilicate (CAS) material. Nanoporous CAS was characterized using X-ray powder diffraction (XRD), field emission transmission and scanning electron microscopies (FE-TEM/FE-SEM), Fourier transform infrared (FTIR) spectroscopy, and optical analyses. The CAS was also evaluated for use as a promising disinfectant for the inactivation of waterborne pathogens. The antimicrobial action and minimum inhibitory concentration (MIC) of this CAS disinfectant were determined against eight microorganisms (Escherichia coli, Salmonella enterica, Pseudomonas aeruginosa, Listeria monocytogenes, Staphylococcus aureus, Enterococcus faecalis, Candida albicans, and Aspergillus niger). An antimicrobial susceptibility testing of CAS was measured. Results of disc diffusion method pointed out that the diameters of the zone using well diffusion were wider than disc diffusion methods, and the findings also showed that the MIC of the CAS disinfectant against E. coli, S. enterica, and P. aeruginosa was 100 mg/L within 20 min of contact time. Meanwhile, the MIC of the CAS disinfectant was 100 mg/L within 40 min of contact time for the other strains. The efficacy of antimicrobial action (100%) reached within 20 to 40 min against all tested microbes. Herein, the antimicrobial susceptibility testing of CAS disinfectant showed no toxicity for human and bacterial cells. It can be concluded that nanoporous CAS is a promising, economically, and worthy weapon for water disinfection.

Rifampicin (RIF) films were prepared. X-ray diffraction (XRD) patterns showed monoclinic structur... more Rifampicin (RIF) films were prepared. X-ray diffraction (XRD) patterns showed monoclinic structure of powder Rifampicin. While XRD patterns showed nanocrystalline structure of the thin films. The nanostructure character of Rifampicin films is confirmed by using high resolution transmission electron microscope (HRTEM). Spectrophotometric method was used to measure the intensity of transmitted and reflected light in Rifampicin films to determine optical parameters. The allowed indirect transitions are found in Rifampicin films with energy gap of 1.9 eV. I-V characteristics of Au/Rifampicin/p-Si/Al were measured in different conditions. Under illumination, the device shows photoinduced charge transfer which suggests that, the fabricated device can be used as photodiode. The value of photoresponsivity of the diode is increases with increasing light intensity.

Ag2HgI4 nano-powder was successively prepared by the solvothermal method. The structure and morph... more Ag2HgI4 nano-powder was successively prepared by the solvothermal method. The structure and morphology of the resulted powder were characterized by X-ray diffraction technique, electron dispersive x-ray spectroscopy (EDX), and scanning electron microscope (SEM). Phase transformation was studied by differential thermal analysis (DTA) at 5, 10, 15, 20, 25, and 30 degrees/minute heating rates. The non-isothermal apparent activation energy of the attained thermal transitions was calculated by Kissinger, Flynn-Wall-Ozawa, and Augis-Bennett approaches respectively.

Polystyrene membranes were found to be an effective-assisted material in the growth of undoped an... more Polystyrene membranes were found to be an effective-assisted material in the growth of undoped and doped indium-tin-oxide (ITO) with different concentrations from 3 to 7 wt% of CuO nanoparticles. Nanocomposites were characterized by XRD, FT-IR, HR-SEM/TEM, and dielectric measurements. Polystyrene-assisted ITO nanocomposites (ITO/PS) showed the high crystalline phase with lattice fringes, and well agreed on the cubic phase of ITO. As the concentration of CuO increases in ITO/PS nanocomposite, the conductivity decreases. Differential scanning calorimetry/thermogravimetric analysis showed a good thermal stability of the prepared nanocomposites. The increase of CuO wt% did not affect the major degeneration temperature and the thermal stability of undoped composite. The highest conductivity was obtained for ITO doped with 7 wt% of CuO. The formed Polystyrene-assisted ITO:Cu nanocomposites demonstrated a considerable antimicrobial activity against non-filamentous fungi (Candida albicans), Gram-positive bacteria (Bacillus mycoides), and Gram-negative bacteria (Escherichia coli) at all tested concentrations (3.0-7.0 wt% of CuO) with maximum activity at 7.0 wt% of CuO.

The Sb 2 Se 3 thin film was successfully deposited on the n-Si substrate using an electron beam e... more The Sb 2 Se 3 thin film was successfully deposited on the n-Si substrate using an electron beam evaporated technique. The structural investigation was done by means of x-ray diffraction analysis. The surface morphology and elemental analysis of the synthesized films were studied by FESEM and EDAX, respectively. The electrical properties of the Sb 2 Se 3 /n-Si heterojunction were considered by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The I-V results of Sb 2 Se 3 /n-Si heterojunction diode show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The capacitance-voltage results show the abrupt nature of the junction under consideration.

Background: PbSe is A4B6 group narrow gap material with energy gap about 0.3 eV. InSe is A3B6 gro... more Background: PbSe is A4B6 group narrow gap material with energy gap about 0.3 eV. InSe is A3B6 group with energy gap 1.3 eV and layered structure. In the layers, covalent bonds are present, while Van Der Waals force acts between layers. When Pb ratio is high and the In ratio is low we have PbSe, but with nanostructure in present work. Hence better electrical properties are expected. In the case of higher indium ratio and lower Pb ratio, we obtain really a mixture of PbSe and InSe, with expected lower conductivity. Authors revised all patents relating to the effect of In addition to PbSe thin films. Objective: The aim of the present work is to study the effect of In substitution on the structural, electrical and optical properties of PbSe nanocrystalline films. Method: The bulk compositions Pb 55.03 In 6.58 Se 38.39 and Pb 32.54 In 29.55 Se 38.01 were prepared by solid solution reaction and their thin films were deposited by thermal evaporation technique. The structural and morphological analyses were carried out by X-Ray Diffraction, scanning electron microscope, and high resolution transmission electron microscope. The optical properties were studied by using spectropho-tometer measurements. The galvanomagnetic properties were studied by means of conductivity, Hall Effect and magnetoresistance. Results and Conclusion: XRD of Pb 32.54 In 29.55 Se 38.01 and Pb 55.03 In 6.58 Se 38.39 films showed polycrystal-line cubic structure. The optical band gap for Pb 55.03 In 6.58 Se 38.39 and Pb 32.54 In 29.55 Se 38.01 films is determined as 1.77 and 1.67 eV, respectively. Electrical conductivity, charge carriers concentration, mobility and magnetoresistance of Pb 32.54 In 29.55 Se 38.01 and Pb 55.03 In 6.58 Se 38.39 films were investigated as a function of temperature. The films with the higher Pb content demonstrated higher crystallinity, conductivity, mobility, and magnetoresistance.

The CuInGeSe 4 thin film was deposited onto n-type single crystal silicon wafers by the electron ... more The CuInGeSe 4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe 4 /n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe 4 thin film was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive X-ray analysis (EDX). The dark current-voltage characteristics of the Au/CuInGeSe 4 /n-Si/Al het-erojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe 4 /n-Si het-erojunction were studied at different temperatures in the dark.

A high bandgap semiconductor of Cu doped LMS (Cu-LMS) thin films incorporation in nano-porous lit... more A high bandgap semiconductor of Cu doped LMS (Cu-LMS) thin films incorporation in nano-porous lithium magneso-silicate (LMS) thin films as in the formula (10 Li 2 O: 15 MgO: (75-x) SiO 2 : (x=0, 2, 5 and 8) Cu) has been successfully prepared by a facile acidic sol-gel method, spin-coating on glass substrate and then calcined at 450 °C for 5h in air. The x-ray diffraction (XRD) pattern indicated the formation of nanocrystalline anorthic phase for pure (LMS) and Cu doped (Cu-LMS). The surface morphological analysis through the scanning electron microscopy (SEM) approved the formation of nano-size (LMS) with good periodicity and great adherence. The optical measurements revealed an increase in both the refractive index values and the band gap of the nano-porous LMS with increasing Cu content. These results suggest that nano-porous Cu-LMS films can be a good candidate for various optical applications such as sensors, waveguide, and solar cells.

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Thin films of n-InAs were successfully grown on p-GaP single crystalline substrates by using two ... more Thin films of n-InAs were successfully grown on p-GaP single crystalline substrates by using two different techniques (i.e. vacuum flash evaporation technique and liquid phase epitaxy). The elemental composition of the prepared films was confirmed by energy dispersive X-ray spectroscopy. The morphology of the film was characterized by scanning electron microscopy. Electrical characteristics of n-InAs/p-GaP heterojunction, prepared by both vacuum flash evaporation and liquid phase epitaxy were investigated. Current density–voltage and high frequency capacitance–voltage characteristics of the barrier were measured in the temperature range from 300 to 400 K. Analysis of current density–voltage characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor of the current density–voltage characteristics was found to be dependent of temperature. The temperature dependence of the barrier height was discussed for both heterojunctions. Analysis of the capacitance–voltage characteristics under high frequency indicates abrupt heterojunction formation for the prepared n-InAs/p-GaP. The comparative studies of the prepared heterojunctions, prepared were also performed. The electrical properties were studied in the frequency range of 10 2 –10 6 Hz. The dielectric constant and dielectric loss were analyzed as a function of frequency.

Solid State Sciences, 2020

Amorpho-structural and magnetic analysis of Al2O3–P2O5–Na2O/NiO magnetic porous nanocomposites in... more Amorpho-structural and magnetic analysis of Al2O3–P2O5–Na2O/NiO magnetic porous nanocomposites in the influence of SiO2 as a nucleating agent is studied. Concurrently, the effect of the incorporated NiO nanoparticles on the structural, morphological, optical, and magnetic characteristics of the Al2O3–P2O5–Na2O porous nanocomposites is examined. XRD and FT-IR spectroscopy indicated the successful formation of Al2O3–P2O5–Na2O crystallizes, while the incorporation of NiO/SiO2 increased the total crystalline degree. TEM-results designate an increase in particle size of the phosphate-based crystallites as the NiO/SiO2 level increases, which corresponded to the higher crystallization in the sodium aluminophosphate (Al4Na7P9O32) nanocomposite. The FT-IR results showed that these modified sol-gel reactions are a result of acid hydrolysis of the Al–O–P and Na–O–P bonds and the influence of Si–O–OH, leading to network termination by POH groups and octahedrally solvated Al atoms (with strong quadrupole interaction) with the SiOH groups. With the introduction of NiO/SiO2, the fundamental band gaps are found to be 3.89, 3.93, 3.98, and 4.05 eV for direct allowed transitions. In the case of the indirect transition, the energy of the bandgap were 3.42, 3.57, 3.63, and 4.75 with the introducing of NiO/SiO2. The saturation magnetization increased from 0.11 to 0.38 with increasing NiO content from 0.15 to 0.25%. Also, the switching field distribution (SFD) was investigated. The obtained optical and magnetic properties for Al2O3–P2O5–Na2O/NiO magnetic porous nanocomposites supported with silica which make them an excellent candidate for high-performance optics, biocompatible systems, solid-state electrolytes, fast ion-conducting materials, and opto-magnetic devices.

� (rGO)/La 0.9 Bi 0.1 FeO 3 (LBFO) nanocomposites were prepared by sol-gel method. � LFBO has a s... more � (rGO)/La 0.9 Bi 0.1 FeO 3 (LBFO) nanocomposites were prepared by sol-gel method. � LFBO has a single-phase and were homogeneously dispersed on graphene nanosheets. � rGO improves the electrical properties up to 50 wt% of rGO. � The ferromagnetic behavior was detected and an enhancement of magnetic properties with rGO. � The magnetic and electrical properties can be optimized by tuning the content of rGO. A B S T R A C T Reduced graphene oxide (rGO)/La 0.9 Bi 0.1 FeO 3 (LBFO) nanocomposites were successfully prepared. The structure , morphology, electrical and magnetic properties were investigated by X-ray diffraction, high-resolution transmission electron microscope, impedance analyzer, and vibrating sample magnetometer, respectively. Results show that perovskites LFBO has a single-phase and were homogeneously dispersed on graphene nanosheets. rGO improves the electrical properties up to 50 wt% of rGO. The ferromagnetic behavior of nanocomposites was detected and also an enhancement of its magnetic properties with rGO content. These results reveal that the magnetic and electrical properties can be optimized by tuning the content of rGO.

5 , 5-dibromo-o-cresolsulfophthalein (BCP) films were deposited on glass, quartz, and n-Si substr... more 5 , 5-dibromo-o-cresolsulfophthalein (BCP) films were deposited on glass, quartz, and n-Si substrates by using conventional thermal evaporation method. XRD studies showed that the BCP has a polycrystalline structure in powder form and a nanocrystalline structure in thin film form. The nanostructure character of BCP films is confirmed by using a high-resolution transmission electron microscope (HRTEM). Thermal stability and phase change were examined by means of thermogravimetric analysis (TGA) and the differential scanning calorimetry (DSC), respectively. Optical absorption studies of BCP films were done in the wavelength range 200-2500 nm. The films showed a direct optical energy gap of 1.89 eV. Current versus voltage (I-V) characteristics of Au/BCP/n-Si/Al were studied in darkness and in illumination modes. The device shows photoinduced charge transfer and can be used as a photodiode.

The organic 5′,5″-dibromo-o-cresolsulfophthalein (BCP) compound thin films were deposited simply ... more The organic 5′,5″-dibromo-o-cresolsulfophthalein (BCP) compound thin films were deposited simply through spin coating technique from a pre-prepared solution of different molarities. Differential thermal analysis (DSC) and thermogravimetric analysis (TGA) of the starting powder compound were investigated to obtain the thermal stability and phase transformation of the compound. The structure, morphology, and optical properties were analyzed for all the prepared films of different molarities. Structural analyses revealed the nanocrystalline composition of all the prepared thin films. The resulted thin films nanostructure feature is verified by utilizing both the field emission scanning-electron-microscope (FESEM) and the high-resolution transmission electron microscope (HRTEM). Optical absorption exploration of BCP thin films was carried out in the limit of 200-2500 nm wavelength. The results revealed no changes in optical properties with molarity change. Al/p-Si/ BCP/Au junction was prepared and investigated electrically in dark conditions and the diode parameters were extracted. The obtained diode can be employed in many applications such as rectifiers, clipper circuits, clamping circuits, reverse current protection circuits, logic gates, voltage multipliers, flexible electronics, and many other optoelectronic applications.

Copper mercury tetraiodide thin films were grown by the chemical bath deposition technique at dif... more Copper mercury tetraiodide thin films were grown by the chemical bath deposition technique at different deposition temperatures varying from 300 K to 345 K. The structural properties of the prepared Cu 2 HgI 4 thin films show that the Cu 2 HgI 4 films have a polycrystalline nature. The compositional analysis confirmed the nearly stoichiometric structure of the deposited Cu 2 HgI 4 thin films. Homogeneous and regular surface morphology, including Effect of deposition temperature on structural 463 of circular-shaped grains with a size range from 31 to 46 nm, was revealed. Thermal stability and phase transition were studied by means of thermogravimetric analysis (TGA) and differential thermal analysis (DSC), respectively. The effects of deposition temperature on the optical properties and D.C. electrical conductivity of the Cu 2 HgI 4 films have been studied. The films were found to have an indirect optical energy gap of values increases with increasing substrate temperature. The electrical conductivity increases with increasing temperature according to grain boundary trapping model.

Reproducible and good quality copper bismuth sulphide (CuBiS 2) thin layer were situated on prehe... more Reproducible and good quality copper bismuth sulphide (CuBiS 2) thin layer were situated on preheated glassy slide substrates made implementing the spraying pyrolysis approach at distinctive times of spraying 15, 30, 45, and 60 min with a fixed substrate temperature 400°C. The effect of spray time on the structural, morphology, optical and electrical benefits of the CuBiS 2 thin films produced by spray pyrolysis methodology were studied. The structure was studied by XRD methodology. The surface texture of the produced films was considered by SEM. The optical benefits of the CuBiS 2 films were inquired working with the spectrophotometric method in which the optical transmittance and reflectance beyond a wavelength range 200-2500 nm were measured. The d.c. conductivity was studied at different temperatures for all the prepared CuBiS 2 thin films.

The cu 2 s powder was prepared by low-cost hydrothermal method and was deposited as thin films by... more The cu 2 s powder was prepared by low-cost hydrothermal method and was deposited as thin films by thermal evaporation. The structural properties are explored by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The XRD shows a monoclinic polycrystalline nature of hydrothermally prepared powder, while the deposited film shows a hump corresponding to Cu 2 S nanocrystallites. HRTEM micrograph shows nanoparticles with sizes ranging from 30 to 45 nm. Based on the thermogravimetric results, the thermal kinetic parameters are calculated by application of Broido method. The optical energy band gap of the evaporated films is determined as 2.3 eV. The electrical conductivity, charge carriers concentration, carriers mobility and the magnetoresistance (MR) of the films are investigated as a function of temperature.. In MSc and PhD, the work was about studying the structural, optical and electrical transport properties of organic thin films for solar cell applications. In post-doctoral Structural, optical and galvanomagnetical properties 273 research, he extended his work to include also the preparation and characterisation of inorganic nanoparticles for the same purpose. He obtained seven prizes and three certificates of appreciation from his country. He travelled to attend several conferences in the field of solar cells and he travelled for a scientific mission to France for nine months in the same field of solar cells.

We used a green sol-gel synthesis method to fabricate a novel nanoporous copper aluminosilicate (... more We used a green sol-gel synthesis method to fabricate a novel nanoporous copper aluminosilicate (CAS) material. Nanoporous CAS was characterized using X-ray powder diffraction (XRD), field emission transmission and scanning electron microscopies (FE-TEM/FE-SEM), Fourier transform infrared (FTIR) spectroscopy, and optical analyses. The CAS was also evaluated for use as a promising disinfectant for the inactivation of waterborne pathogens. The antimicrobial action and minimum inhibitory concentration (MIC) of this CAS disinfectant were determined against eight microorganisms (Escherichia coli, Salmonella enterica, Pseudomonas aeruginosa, Listeria monocytogenes, Staphylococcus aureus, Enterococcus faecalis, Candida albicans, and Aspergillus niger). An antimicrobial susceptibility testing of CAS was measured. Results of disc diffusion method pointed out that the diameters of the zone using well diffusion were wider than disc diffusion methods, and the findings also showed that the MIC of the CAS disinfectant against E. coli, S. enterica, and P. aeruginosa was 100 mg/L within 20 min of contact time. Meanwhile, the MIC of the CAS disinfectant was 100 mg/L within 40 min of contact time for the other strains. The efficacy of antimicrobial action (100%) reached within 20 to 40 min against all tested microbes. Herein, the antimicrobial susceptibility testing of CAS disinfectant showed no toxicity for human and bacterial cells. It can be concluded that nanoporous CAS is a promising, economically, and worthy weapon for water disinfection.

Rifampicin (RIF) films were prepared. X-ray diffraction (XRD) patterns showed monoclinic structur... more Rifampicin (RIF) films were prepared. X-ray diffraction (XRD) patterns showed monoclinic structure of powder Rifampicin. While XRD patterns showed nanocrystalline structure of the thin films. The nanostructure character of Rifampicin films is confirmed by using high resolution transmission electron microscope (HRTEM). Spectrophotometric method was used to measure the intensity of transmitted and reflected light in Rifampicin films to determine optical parameters. The allowed indirect transitions are found in Rifampicin films with energy gap of 1.9 eV. I-V characteristics of Au/Rifampicin/p-Si/Al were measured in different conditions. Under illumination, the device shows photoinduced charge transfer which suggests that, the fabricated device can be used as photodiode. The value of photoresponsivity of the diode is increases with increasing light intensity.

Ag2HgI4 nano-powder was successively prepared by the solvothermal method. The structure and morph... more Ag2HgI4 nano-powder was successively prepared by the solvothermal method. The structure and morphology of the resulted powder were characterized by X-ray diffraction technique, electron dispersive x-ray spectroscopy (EDX), and scanning electron microscope (SEM). Phase transformation was studied by differential thermal analysis (DTA) at 5, 10, 15, 20, 25, and 30 degrees/minute heating rates. The non-isothermal apparent activation energy of the attained thermal transitions was calculated by Kissinger, Flynn-Wall-Ozawa, and Augis-Bennett approaches respectively.

Polystyrene membranes were found to be an effective-assisted material in the growth of undoped an... more Polystyrene membranes were found to be an effective-assisted material in the growth of undoped and doped indium-tin-oxide (ITO) with different concentrations from 3 to 7 wt% of CuO nanoparticles. Nanocomposites were characterized by XRD, FT-IR, HR-SEM/TEM, and dielectric measurements. Polystyrene-assisted ITO nanocomposites (ITO/PS) showed the high crystalline phase with lattice fringes, and well agreed on the cubic phase of ITO. As the concentration of CuO increases in ITO/PS nanocomposite, the conductivity decreases. Differential scanning calorimetry/thermogravimetric analysis showed a good thermal stability of the prepared nanocomposites. The increase of CuO wt% did not affect the major degeneration temperature and the thermal stability of undoped composite. The highest conductivity was obtained for ITO doped with 7 wt% of CuO. The formed Polystyrene-assisted ITO:Cu nanocomposites demonstrated a considerable antimicrobial activity against non-filamentous fungi (Candida albicans), Gram-positive bacteria (Bacillus mycoides), and Gram-negative bacteria (Escherichia coli) at all tested concentrations (3.0-7.0 wt% of CuO) with maximum activity at 7.0 wt% of CuO.

The Sb 2 Se 3 thin film was successfully deposited on the n-Si substrate using an electron beam e... more The Sb 2 Se 3 thin film was successfully deposited on the n-Si substrate using an electron beam evaporated technique. The structural investigation was done by means of x-ray diffraction analysis. The surface morphology and elemental analysis of the synthesized films were studied by FESEM and EDAX, respectively. The electrical properties of the Sb 2 Se 3 /n-Si heterojunction were considered by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The I-V results of Sb 2 Se 3 /n-Si heterojunction diode show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The capacitance-voltage results show the abrupt nature of the junction under consideration.

Background: PbSe is A4B6 group narrow gap material with energy gap about 0.3 eV. InSe is A3B6 gro... more Background: PbSe is A4B6 group narrow gap material with energy gap about 0.3 eV. InSe is A3B6 group with energy gap 1.3 eV and layered structure. In the layers, covalent bonds are present, while Van Der Waals force acts between layers. When Pb ratio is high and the In ratio is low we have PbSe, but with nanostructure in present work. Hence better electrical properties are expected. In the case of higher indium ratio and lower Pb ratio, we obtain really a mixture of PbSe and InSe, with expected lower conductivity. Authors revised all patents relating to the effect of In addition to PbSe thin films. Objective: The aim of the present work is to study the effect of In substitution on the structural, electrical and optical properties of PbSe nanocrystalline films. Method: The bulk compositions Pb 55.03 In 6.58 Se 38.39 and Pb 32.54 In 29.55 Se 38.01 were prepared by solid solution reaction and their thin films were deposited by thermal evaporation technique. The structural and morphological analyses were carried out by X-Ray Diffraction, scanning electron microscope, and high resolution transmission electron microscope. The optical properties were studied by using spectropho-tometer measurements. The galvanomagnetic properties were studied by means of conductivity, Hall Effect and magnetoresistance. Results and Conclusion: XRD of Pb 32.54 In 29.55 Se 38.01 and Pb 55.03 In 6.58 Se 38.39 films showed polycrystal-line cubic structure. The optical band gap for Pb 55.03 In 6.58 Se 38.39 and Pb 32.54 In 29.55 Se 38.01 films is determined as 1.77 and 1.67 eV, respectively. Electrical conductivity, charge carriers concentration, mobility and magnetoresistance of Pb 32.54 In 29.55 Se 38.01 and Pb 55.03 In 6.58 Se 38.39 films were investigated as a function of temperature. The films with the higher Pb content demonstrated higher crystallinity, conductivity, mobility, and magnetoresistance.

The CuInGeSe 4 thin film was deposited onto n-type single crystal silicon wafers by the electron ... more The CuInGeSe 4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe 4 /n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe 4 thin film was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive X-ray analysis (EDX). The dark current-voltage characteristics of the Au/CuInGeSe 4 /n-Si/Al het-erojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe 4 /n-Si het-erojunction were studied at different temperatures in the dark.

A high bandgap semiconductor of Cu doped LMS (Cu-LMS) thin films incorporation in nano-porous lit... more A high bandgap semiconductor of Cu doped LMS (Cu-LMS) thin films incorporation in nano-porous lithium magneso-silicate (LMS) thin films as in the formula (10 Li 2 O: 15 MgO: (75-x) SiO 2 : (x=0, 2, 5 and 8) Cu) has been successfully prepared by a facile acidic sol-gel method, spin-coating on glass substrate and then calcined at 450 °C for 5h in air. The x-ray diffraction (XRD) pattern indicated the formation of nanocrystalline anorthic phase for pure (LMS) and Cu doped (Cu-LMS). The surface morphological analysis through the scanning electron microscopy (SEM) approved the formation of nano-size (LMS) with good periodicity and great adherence. The optical measurements revealed an increase in both the refractive index values and the band gap of the nano-porous LMS with increasing Cu content. These results suggest that nano-porous Cu-LMS films can be a good candidate for various optical applications such as sensors, waveguide, and solar cells.

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Thin films of n-InAs were successfully grown on p-GaP single crystalline substrates by using two ... more Thin films of n-InAs were successfully grown on p-GaP single crystalline substrates by using two different techniques (i.e. vacuum flash evaporation technique and liquid phase epitaxy). The elemental composition of the prepared films was confirmed by energy dispersive X-ray spectroscopy. The morphology of the film was characterized by scanning electron microscopy. Electrical characteristics of n-InAs/p-GaP heterojunction, prepared by both vacuum flash evaporation and liquid phase epitaxy were investigated. Current density–voltage and high frequency capacitance–voltage characteristics of the barrier were measured in the temperature range from 300 to 400 K. Analysis of current density–voltage characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor of the current density–voltage characteristics was found to be dependent of temperature. The temperature dependence of the barrier height was discussed for both heterojunctions. Analysis of the capacitance–voltage characteristics under high frequency indicates abrupt heterojunction formation for the prepared n-InAs/p-GaP. The comparative studies of the prepared heterojunctions, prepared were also performed. The electrical properties were studied in the frequency range of 10 2 –10 6 Hz. The dielectric constant and dielectric loss were analyzed as a function of frequency.