Sebastien Amiot | NXP semiconductors (original) (raw)

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Papers by Sebastien Amiot

IEEE Transactions on Circuits and Systems I-regular Papers, 2012

ABSTRACT A harmonic rejection mixer has been designed for DVB-T reception in VHFIII frequency ban... more ABSTRACT A harmonic rejection mixer has been designed for DVB-T reception in VHFIII frequency band. It exhibits 21.3 dB noise figure, 29 dBm input IP3, and 67 dBm input IP2 over the 48–300 MHz frequency range. The third and fifth harmonics are suppressed by more than 60 dB thanks to phase error calibration.The 0.39 rmmm2{\rm mm}^{2}rmmm2 active die is fabricated in 40-GHz fTf_{T}fT Bi-CMOS process consuming 38 mA from a 3.3 V supply including the LO chain.

IEEE Journal of Solid-state Circuits, 2007

IEEE Transactions on Broadcasting, 2007

This paper describes fully integrated RF IC sub-system of a DVB-T/H receiver intended for Mobile ... more This paper describes fully integrated RF IC sub-system of a DVB-T/H receiver intended for Mobile TV reception. The architecture of the RF IC has been designed to be compliant with the category b2 & c of the MBRAIMoBile Radio Access Interface. specification developed for the introduction of TV into existing mobile phone. The coexistence with GSM transceivers has been taken into account to establish the complete link budget from UHF antenna down to the Digital Front-end. A broadband LNA has been designed for an overall IC noise figure of 3.9 dB. The IIP3 is -5 dBm while 25 dBm RF IIP2 has been measured. A 5th order low pass filter has been implemented for adjacent channel suppression. The total power consumption is 150 mW in continuous mode. Thanks to a new broadband synthesizer architecture using a single VCO, the occupied silicon area is 2.2 mm2 in a 0.25 mum BiCMOS technology

A fully-active tunable RF bandpass filter is presented. It uses a novel positive feedback RC &quo... more A fully-active tunable RF bandpass filter is presented. It uses a novel positive feedback RC "Rauch" structure, based on a wideband amplifier for high dynamic range purposes. The filter, designed in a BiCMOS 0.25µm technology, exhibits a 10dBm IIP3 requirement and a 15dB noise figure. The quality factor of 3 obtained from 45 to 240MHz guarantees the required full integration of the selectivity for TV silicon tuners over more than two octaves of the VHF band. I. INTRODUCTION During the past ten years, TV receivers went through an important technological step. Classical can tuners have progressively been replaced by more integrated solutions called silicon TV tuners, leading to the emergence of new functionalities and applications. However, to answer the broadband reception challenges, a high RF selectivity is required. For this purpose, a frequency-tunable RF bandpass filter is used in the receiver chain. It enables the rejection of all strong unwanted signals, which are located at both harmonics, to prevent mixing of the signal with LO harmonic frequencies, and adjacent frequencies, to meet international standards requirements (ATSC-T, DVB-T…). This selectivity is usually based on tunable LC resonators which combine low noise constraints, needed to receive weak signals, and high linearity constraints, required to manage strong interferers without degrading the quality of the reception. To cover the whole TV band, from 42 to 1002MHz, those LC resonators need highly tunable capacitors and inductors. At high frequencies, high quality factor inductors are required to reach adjacent channels selectivity (1) and they may be integrated depending on the technology. Nevertheless, at low frequencies, such inductors are non-optimal to handle selectivity. Thus, larger inductance values are preferred, which prevents their integration on silicon. This leads to the study of a fully-active, inductorless, implementation of this bandpass filtering. Active filtering state-of-the-art mainly considers Gm-C filters for high frequency purposes (2-5). However, these structures present linearity and noise limitations because signal undergoes important distortions inside the gyrator which synthesizes the active inductance. Hence, this paper focuses on an RC filter based on an operational amplifier (OA) using a fast technology, in order to enhance linearity without degrading noise. The filter proposed in this paper presents an active realization of a « Rauch » type filter, placed in a 50Ω environment, tunable over more than two octaves of the VHF band, from 45 to 240MHz.

ABSTRACT This selectivity is usually based on tunable LC resonators which combine low noise const... more ABSTRACT This selectivity is usually based on tunable LC resonators which combine low noise constraints, needed to receive weak wanted signals, with high linearity constraints, needed to manage strong interferers without degrading the quality of the reception. To cover the whole TV band, spreading from 42 to 1002MHz, these LC resonators need capacitors varying over a large frequency range and inductors. At high frequencies, high quality factor inductors are required to reach adjacent channels selectivity. Depending on the technology, these inductors may be integrated. Nevertheless, at low frequencies, such inductors

IEEE Transactions on Circuits and Systems I-regular Papers, 2012

ABSTRACT A harmonic rejection mixer has been designed for DVB-T reception in VHFIII frequency ban... more ABSTRACT A harmonic rejection mixer has been designed for DVB-T reception in VHFIII frequency band. It exhibits 21.3 dB noise figure, 29 dBm input IP3, and 67 dBm input IP2 over the 48–300 MHz frequency range. The third and fifth harmonics are suppressed by more than 60 dB thanks to phase error calibration.The 0.39 rmmm2{\rm mm}^{2}rmmm2 active die is fabricated in 40-GHz fTf_{T}fT Bi-CMOS process consuming 38 mA from a 3.3 V supply including the LO chain.

IEEE Journal of Solid-state Circuits, 2007

IEEE Transactions on Broadcasting, 2007

This paper describes fully integrated RF IC sub-system of a DVB-T/H receiver intended for Mobile ... more This paper describes fully integrated RF IC sub-system of a DVB-T/H receiver intended for Mobile TV reception. The architecture of the RF IC has been designed to be compliant with the category b2 & c of the MBRAIMoBile Radio Access Interface. specification developed for the introduction of TV into existing mobile phone. The coexistence with GSM transceivers has been taken into account to establish the complete link budget from UHF antenna down to the Digital Front-end. A broadband LNA has been designed for an overall IC noise figure of 3.9 dB. The IIP3 is -5 dBm while 25 dBm RF IIP2 has been measured. A 5th order low pass filter has been implemented for adjacent channel suppression. The total power consumption is 150 mW in continuous mode. Thanks to a new broadband synthesizer architecture using a single VCO, the occupied silicon area is 2.2 mm2 in a 0.25 mum BiCMOS technology

A fully-active tunable RF bandpass filter is presented. It uses a novel positive feedback RC &quo... more A fully-active tunable RF bandpass filter is presented. It uses a novel positive feedback RC "Rauch" structure, based on a wideband amplifier for high dynamic range purposes. The filter, designed in a BiCMOS 0.25µm technology, exhibits a 10dBm IIP3 requirement and a 15dB noise figure. The quality factor of 3 obtained from 45 to 240MHz guarantees the required full integration of the selectivity for TV silicon tuners over more than two octaves of the VHF band. I. INTRODUCTION During the past ten years, TV receivers went through an important technological step. Classical can tuners have progressively been replaced by more integrated solutions called silicon TV tuners, leading to the emergence of new functionalities and applications. However, to answer the broadband reception challenges, a high RF selectivity is required. For this purpose, a frequency-tunable RF bandpass filter is used in the receiver chain. It enables the rejection of all strong unwanted signals, which are located at both harmonics, to prevent mixing of the signal with LO harmonic frequencies, and adjacent frequencies, to meet international standards requirements (ATSC-T, DVB-T…). This selectivity is usually based on tunable LC resonators which combine low noise constraints, needed to receive weak signals, and high linearity constraints, required to manage strong interferers without degrading the quality of the reception. To cover the whole TV band, from 42 to 1002MHz, those LC resonators need highly tunable capacitors and inductors. At high frequencies, high quality factor inductors are required to reach adjacent channels selectivity (1) and they may be integrated depending on the technology. Nevertheless, at low frequencies, such inductors are non-optimal to handle selectivity. Thus, larger inductance values are preferred, which prevents their integration on silicon. This leads to the study of a fully-active, inductorless, implementation of this bandpass filtering. Active filtering state-of-the-art mainly considers Gm-C filters for high frequency purposes (2-5). However, these structures present linearity and noise limitations because signal undergoes important distortions inside the gyrator which synthesizes the active inductance. Hence, this paper focuses on an RC filter based on an operational amplifier (OA) using a fast technology, in order to enhance linearity without degrading noise. The filter proposed in this paper presents an active realization of a « Rauch » type filter, placed in a 50Ω environment, tunable over more than two octaves of the VHF band, from 45 to 240MHz.

ABSTRACT This selectivity is usually based on tunable LC resonators which combine low noise const... more ABSTRACT This selectivity is usually based on tunable LC resonators which combine low noise constraints, needed to receive weak wanted signals, with high linearity constraints, needed to manage strong interferers without degrading the quality of the reception. To cover the whole TV band, spreading from 42 to 1002MHz, these LC resonators need capacitors varying over a large frequency range and inductors. At high frequencies, high quality factor inductors are required to reach adjacent channels selectivity. Depending on the technology, these inductors may be integrated. Nevertheless, at low frequencies, such inductors