Adina Ina | Austrian Academy of Sciences (original) (raw)
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Università degli studi di Modena e Reggio Emilia
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The atomic structure of In 0.81 Ga 0.19 As/InP alloy layers was examined using in situ scanning t... more The atomic structure of In 0.81 Ga 0.19 As/InP alloy layers was examined using in situ scanning tunneling microscopy. The ͑2ϫ3͒ reconstruction observed during growth by reflection high-energy electron diffraction represents a combination of surface structures, including a 2͑2ϫ4͒ commonly observed on GaAs͑001͒ and InAs͑001͒ surfaces, and a disordered ͑4ϫ3͒ that is unique to alloy systems. The proposed ͑4ϫ3͒ structure is comprised of both anion and cation dimers. Empty and filled states images show that the features reverse contrast with sample bias, in agreement with the model.
The atomic structure of In 0.81 Ga 0.19 As/InP alloy layers was examined using in situ scanning t... more The atomic structure of In 0.81 Ga 0.19 As/InP alloy layers was examined using in situ scanning tunneling microscopy. The ͑2ϫ3͒ reconstruction observed during growth by reflection high-energy electron diffraction represents a combination of surface structures, including a 2͑2ϫ4͒ commonly observed on GaAs͑001͒ and InAs͑001͒ surfaces, and a disordered ͑4ϫ3͒ that is unique to alloy systems. The proposed ͑4ϫ3͒ structure is comprised of both anion and cation dimers. Empty and filled states images show that the features reverse contrast with sample bias, in agreement with the model.