Vassil Palankovski | University of Oulu (original) (raw)

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Papers by Vassil Palankovski

Research paper thumbnail of Introductory Invited Paper: Rigorous Modeling of High-Speed Semiconductor Devices

Research paper thumbnail of High-temperature modeling of AlGaN/GaN HEMTs

Solid State Electronics, Oct 31, 2010

Research paper thumbnail of Simulation of Heterojunction Bipolar Transistors

Research paper thumbnail of A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization

Research paper thumbnail of Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation

Research paper thumbnail of Reliable prediction of deep sub-quarter micron CMOS technology performance

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516), 2001

We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It in... more We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization, and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 μm technology and applied to 0.13 μm technology in order to estimate ring oscillator speed. The simulation results

Research paper thumbnail of A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization

Simulation of Semiconductor Processes and Devices 2001, 2001

Research paper thumbnail of Novel Devices

Computational Microelectronics, 2004

Research paper thumbnail of Heterojunction Bipolar Transistors

Computational Microelectronics, 2004

Research paper thumbnail of Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors

Applied Surface Science, 2014

ABSTRACT We investigate the impact of interface traps and bulk traps on the performance of n(++)G... more ABSTRACT We investigate the impact of interface traps and bulk traps on the performance of n(++)GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs) using two-dimensional Sentaurus TCAD simulation. The device uses lattice-matched wide bandgap In0.17Al0.83N as a thin barrier layer. The simulations are performed using the thermodynamic transport model. Interface and bulk traps are accounted for in our simulations. The results indicate a significant influence of both acceptor and donor traps on device operation, as long as the traps are considered in the barrier layer. On the other hand, simulations with donor traps specified at the In0.17Al0.83N/n(++) GaN cap interface show no influence on the transfer characteristic. (C) 2014 Published by Elsevier B.V.

Research paper thumbnail of 5. Heterojunction Bipolar Transistors

Research paper thumbnail of High-temperature modeling of AlGaN/GaN HEMTs

Solid-State Electronics, 2010

Research paper thumbnail of Rigorous modeling approach to numerical simulation of SiGe HBTs

Applied Surface Science, 2004

Research paper thumbnail of Two-dimensional modeling of quantum mechanical effects in ultra-short CMOS devices

Research paper thumbnail of Predictive Simulation of AlGaN/GaN HEMTs

Research paper thumbnail of Nonstationary effects of the space charge in semiconductor structures

Journal of Applied Physics, 2009

A study of nonstationary effects of space charge in semiconductor structures, such as nonlinear w... more A study of nonstationary effects of space charge in semiconductor structures, such as nonlinear wave interactions in active media operating in the microwave and millimeter wave range, is presented in this paper. Also, an exhaustive analysis of different models describing the propagation of space charge waves is carried out. Furthermore, we have concluded that the most appropriate nonlocal model to describe the space charge wave propagation in thin films possessing negative differential conductivity is the detailed balance model.

Research paper thumbnail of Physics-Based Modeling of GaN HEMTs

IEEE Transactions on Electron Devices, 2000

Research paper thumbnail of Continuous Workbench of Simulation & Design Software Tools for Educational Applications

Research paper thumbnail of Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs

Research paper thumbnail of A simulation study of enhancement-mode AlGaN/GaN HEMTs with recessed gates

Research paper thumbnail of Introductory Invited Paper: Rigorous Modeling of High-Speed Semiconductor Devices

Research paper thumbnail of High-temperature modeling of AlGaN/GaN HEMTs

Solid State Electronics, Oct 31, 2010

Research paper thumbnail of Simulation of Heterojunction Bipolar Transistors

Research paper thumbnail of A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization

Research paper thumbnail of Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation

Research paper thumbnail of Reliable prediction of deep sub-quarter micron CMOS technology performance

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516), 2001

We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It in... more We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization, and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 μm technology and applied to 0.13 μm technology in order to estimate ring oscillator speed. The simulation results

Research paper thumbnail of A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization

Simulation of Semiconductor Processes and Devices 2001, 2001

Research paper thumbnail of Novel Devices

Computational Microelectronics, 2004

Research paper thumbnail of Heterojunction Bipolar Transistors

Computational Microelectronics, 2004

Research paper thumbnail of Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors

Applied Surface Science, 2014

ABSTRACT We investigate the impact of interface traps and bulk traps on the performance of n(++)G... more ABSTRACT We investigate the impact of interface traps and bulk traps on the performance of n(++)GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs) using two-dimensional Sentaurus TCAD simulation. The device uses lattice-matched wide bandgap In0.17Al0.83N as a thin barrier layer. The simulations are performed using the thermodynamic transport model. Interface and bulk traps are accounted for in our simulations. The results indicate a significant influence of both acceptor and donor traps on device operation, as long as the traps are considered in the barrier layer. On the other hand, simulations with donor traps specified at the In0.17Al0.83N/n(++) GaN cap interface show no influence on the transfer characteristic. (C) 2014 Published by Elsevier B.V.

Research paper thumbnail of 5. Heterojunction Bipolar Transistors

Research paper thumbnail of High-temperature modeling of AlGaN/GaN HEMTs

Solid-State Electronics, 2010

Research paper thumbnail of Rigorous modeling approach to numerical simulation of SiGe HBTs

Applied Surface Science, 2004

Research paper thumbnail of Two-dimensional modeling of quantum mechanical effects in ultra-short CMOS devices

Research paper thumbnail of Predictive Simulation of AlGaN/GaN HEMTs

Research paper thumbnail of Nonstationary effects of the space charge in semiconductor structures

Journal of Applied Physics, 2009

A study of nonstationary effects of space charge in semiconductor structures, such as nonlinear w... more A study of nonstationary effects of space charge in semiconductor structures, such as nonlinear wave interactions in active media operating in the microwave and millimeter wave range, is presented in this paper. Also, an exhaustive analysis of different models describing the propagation of space charge waves is carried out. Furthermore, we have concluded that the most appropriate nonlocal model to describe the space charge wave propagation in thin films possessing negative differential conductivity is the detailed balance model.

Research paper thumbnail of Physics-Based Modeling of GaN HEMTs

IEEE Transactions on Electron Devices, 2000

Research paper thumbnail of Continuous Workbench of Simulation & Design Software Tools for Educational Applications

Research paper thumbnail of Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs

Research paper thumbnail of A simulation study of enhancement-mode AlGaN/GaN HEMTs with recessed gates

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