Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source - PubMed (original) (raw)

. 2003 Jun 27;90(25 Pt 1):256603.

doi: 10.1103/PhysRevLett.90.256603. Epub 2003 Jun 23.

Affiliations

• PMID: 12857153
• DOI: 10.1103/PhysRevLett.90.256603

Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source

X Jiang et al. Phys Rev Lett. 2003.

Abstract

Injection of spin-polarized hot-electron current from a magnetic tunnel transistor into GaAs is demonstrated by the observation of polarized light emission from a GaAs/In(0.2)Ga(0.8)As multiple quantum well light-emitting diode. Electroluminescence from the quantum wells shows a polarization of approximately 10% after subtraction of a linear background polarization. The polarization shows a strong dependence on the bias voltage across the diode, which may originate from changes in the electron spin relaxation rate in the quantum wells under varying bias conditions.

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