Lev Mourokh | Queens College (original) (raw)
Papers by Lev Mourokh
We have analyzed the electric current through a tunnel junction having its transition matrix elem... more We have analyzed the electric current through a tunnel junction having its transition matrix elements modulated by a vibrational motion, with arbitrary voltage applied to the junction and arbitrary temperature of electrons in leads. This modulation can be realized by the introduction of molecules embedded between the leads, or by coupling the tunnel junction to a mechanical oscillator (cantilever). We find that the nonlinear current through this nanoelectromechanical system is proportional to the exponent of the ratio of the nonequilibrium dispersion of fluctuations of oscillator position and the tunneling length. An explicit expression for this dispersion of fluctuations is determined here on a microscopic basis, with its voltage and temperature dependencies. We have shown that for appropriate parameter values (oscillator mass and characteristic frequency, as well as the applied voltage bias) the conductance of the tunnel junction exhibits strong (almost exponential) dependence on temperature, which is in agreement with recent experimental data.
Journal of Chemical Physics, Jun 18, 2009
Journal of Applied Physics, Jan 15, 2002
APS March Meeting Abstracts, Mar 1, 2002
APS, Mar 1, 2003
We analyze the dynamics of a nanomechanical oscillator coupled to an electrical tunnel junction w... more We analyze the dynamics of a nanomechanical oscillator coupled to an electrical tunnel junction with an arbitrary voltage applied across the junction and arbitrary temperature of electrons in the leads. We obtain explicit expressions for the fluctuations of oscillator position, its damping/decoherence rate, and the current through the structure. It is shown that quantum heating of the oscillator results in nonlinearity of the current-voltage characteristics. The effects of mechanical vacuum fluctuations are also discussed.
arXiv (Cornell University), Jul 20, 2007
Applied Physics Letters, Mar 1, 2008
The induced magnetic moment of a semiconductor tunnel-coupled double quantum wire system is analy... more The induced magnetic moment of a semiconductor tunnel-coupled double quantum wire system is analyzed in the case when the parallel wires are connected to leads in a series arrangement, with their length perpendicular to the lead-to-lead current. We derive and solve the equations of motion for the double-wire electron Green's functions using the transfer-tunneling Hamiltonian formalism. This generalizes the Meir-Wingreen approach to structures having a continuous spectrum. The solution is employed to determine the average magnetic moment of the double-wire system induced by a magnetic field applied perpendicular to the plane of the wires and leads. We show that, at low temperature, the magnetic response of such a system can be either diamagnetic or paramagnetic depending on the applied bias and the equilibrium chemical potential of the leads. These properties of the double-wire structure introduce a mechanism for the lead-to-lead bias control of the induced magnetic moment of this system.
European Physical Journal-special Topics, Apr 12, 2021
The concept of reorganization energy is well established for molecular systems where the electron... more The concept of reorganization energy is well established for molecular systems where the electron transfer from a donor to an acceptor is accompanied by the reorganization of environment. It is not the case for bulk semiconductors with translational symmetry. However, in the presence of additional confinement, like in the quantum dots, the electron–phonon interaction is modified. We show that when the dots are not identical, the phonon reorganization energy can be determined. We calculate it for a realistic case of GaAs quantum dots.
Journal of Physics: Condensed Matter, Oct 6, 1997
Electron transport in semiconductor quantum wires with parabolic confined potentials is considere... more Electron transport in semiconductor quantum wires with parabolic confined potentials is considered. Non-Markovian Langevin-like equations are derived. A correspondence between the equations obtained and the balance equations for the non-equilibrium steady state is recognized. It is shown that at high temperature the electron mobility remains almost unchanged with increasing temperature. This is due to thermal fluctuations which affect the energy-loss rate via electron-phonon scattering.
Journal of Physics: Condensed Matter, May 25, 2011
APS March Meeting Abstracts, Mar 1, 2004
ABSTRACT
arXiv (Cornell University), Apr 2, 2015
![Research paper thumbnail of Erratum: Acoustically Induced Giant Synthetic Hall Voltages in Graphene [Phys. Rev. Lett. <b>128</b> , 256601 (2022)]](https://attachments.academia-assets.com/120688270/thumbnails/1.jpg)
](Physical Review Letters, Aug 31, 2022
Materials Sciences and Applications, 2018
Journal of Applied Physics, Feb 15, 2001
We have measured the photoreflectance spectrum at 300 K from an AlInAs/GaInAs (lattice matched to... more We have measured the photoreflectance spectrum at 300 K from an AlInAs/GaInAs (lattice matched to InP) heterojunction bipolar transistor structure with a chirped superlattice (ChSl) grown by molecular-beam epitaxy. From the observed Franz–Keldysh oscillations we have evaluated the built-in dc electric fields and associated doping levels in the n-GaInAs collector and n-AlInAs emitter regions. The oscillatory signal originating from the ChSl is caused both by the uniform quasielectric and nonuniform space-charge fields in this region.
We have analyzed the electric current through a tunnel junction having its transition matrix elem... more We have analyzed the electric current through a tunnel junction having its transition matrix elements modulated by a vibrational motion, with arbitrary voltage applied to the junction and arbitrary temperature of electrons in leads. This modulation can be realized by the introduction of molecules embedded between the leads, or by coupling the tunnel junction to a mechanical oscillator (cantilever). We find that the nonlinear current through this nanoelectromechanical system is proportional to the exponent of the ratio of the nonequilibrium dispersion of fluctuations of oscillator position and the tunneling length. An explicit expression for this dispersion of fluctuations is determined here on a microscopic basis, with its voltage and temperature dependencies. We have shown that for appropriate parameter values (oscillator mass and characteristic frequency, as well as the applied voltage bias) the conductance of the tunnel junction exhibits strong (almost exponential) dependence on temperature, which is in agreement with recent experimental data.
Journal of Chemical Physics, Jun 18, 2009
Journal of Applied Physics, Jan 15, 2002
APS March Meeting Abstracts, Mar 1, 2002
APS, Mar 1, 2003
We analyze the dynamics of a nanomechanical oscillator coupled to an electrical tunnel junction w... more We analyze the dynamics of a nanomechanical oscillator coupled to an electrical tunnel junction with an arbitrary voltage applied across the junction and arbitrary temperature of electrons in the leads. We obtain explicit expressions for the fluctuations of oscillator position, its damping/decoherence rate, and the current through the structure. It is shown that quantum heating of the oscillator results in nonlinearity of the current-voltage characteristics. The effects of mechanical vacuum fluctuations are also discussed.
arXiv (Cornell University), Jul 20, 2007
Applied Physics Letters, Mar 1, 2008
The induced magnetic moment of a semiconductor tunnel-coupled double quantum wire system is analy... more The induced magnetic moment of a semiconductor tunnel-coupled double quantum wire system is analyzed in the case when the parallel wires are connected to leads in a series arrangement, with their length perpendicular to the lead-to-lead current. We derive and solve the equations of motion for the double-wire electron Green's functions using the transfer-tunneling Hamiltonian formalism. This generalizes the Meir-Wingreen approach to structures having a continuous spectrum. The solution is employed to determine the average magnetic moment of the double-wire system induced by a magnetic field applied perpendicular to the plane of the wires and leads. We show that, at low temperature, the magnetic response of such a system can be either diamagnetic or paramagnetic depending on the applied bias and the equilibrium chemical potential of the leads. These properties of the double-wire structure introduce a mechanism for the lead-to-lead bias control of the induced magnetic moment of this system.
European Physical Journal-special Topics, Apr 12, 2021
The concept of reorganization energy is well established for molecular systems where the electron... more The concept of reorganization energy is well established for molecular systems where the electron transfer from a donor to an acceptor is accompanied by the reorganization of environment. It is not the case for bulk semiconductors with translational symmetry. However, in the presence of additional confinement, like in the quantum dots, the electron–phonon interaction is modified. We show that when the dots are not identical, the phonon reorganization energy can be determined. We calculate it for a realistic case of GaAs quantum dots.
Journal of Physics: Condensed Matter, Oct 6, 1997
Electron transport in semiconductor quantum wires with parabolic confined potentials is considere... more Electron transport in semiconductor quantum wires with parabolic confined potentials is considered. Non-Markovian Langevin-like equations are derived. A correspondence between the equations obtained and the balance equations for the non-equilibrium steady state is recognized. It is shown that at high temperature the electron mobility remains almost unchanged with increasing temperature. This is due to thermal fluctuations which affect the energy-loss rate via electron-phonon scattering.
Journal of Physics: Condensed Matter, May 25, 2011
APS March Meeting Abstracts, Mar 1, 2004
ABSTRACT
arXiv (Cornell University), Apr 2, 2015
Physical Review Letters, Aug 31, 2022
Materials Sciences and Applications, 2018
Journal of Applied Physics, Feb 15, 2001
We have measured the photoreflectance spectrum at 300 K from an AlInAs/GaInAs (lattice matched to... more We have measured the photoreflectance spectrum at 300 K from an AlInAs/GaInAs (lattice matched to InP) heterojunction bipolar transistor structure with a chirped superlattice (ChSl) grown by molecular-beam epitaxy. From the observed Franz–Keldysh oscillations we have evaluated the built-in dc electric fields and associated doping levels in the n-GaInAs collector and n-AlInAs emitter regions. The oscillatory signal originating from the ChSl is caused both by the uniform quasielectric and nonuniform space-charge fields in this region.