Edmund Burte | Otto-von-Guericke-Universität Magdeburg (original) (raw)
Papers by Edmund Burte
2009 German Microwave Conference, 2009
Abstract In this paper a compact low-pass filter (LPF) composed on arrowhead-DGS slots has been p... more Abstract In this paper a compact low-pass filter (LPF) composed on arrowhead-DGS slots has been proposed and implemented. Triangle-shaped slot is investigated and adapted to tighten the coupling of arrowheads in order to minimize the size of a structure and improve a LPF performance. The measured insertion loss is less than 0.8 dB throughout the pass band from DC up to 3 GHz. Only three cells of the proposed structure are required for a wide stop-band with more than-20 dB stop-band rejection from 4.0 GHz up to 14.0 GHz. The ...
ECS Transactions, 2007
ABSTRACT
ECS Transactions, 2007
ABSTRACT The strontium tantalate (STaO) films were deposited on silicon substrates by liquid deli... more ABSTRACT The strontium tantalate (STaO) films were deposited on silicon substrates by liquid delivery (LD) metalorganic chemical vapor deposition (MOCVD) using Sr[Ta(OEt)5(OC2H4OMe)]2 as a single strontium-tantalum precursor. The deposition of the films was investigated in dependence on process conditions, such as substrate temperature, pressure, and concentration of the precursor. The growth rate varied from 4 to 300 nm/h and the highest rates were observed at the higher values of process temperature, pressure, and concentration of the precursor. As- deposited STaO films were completely amorphous. Crystallization occurs only after annealing at higher temperatures (~1000{degree sign}C). Additionally, annealing reduced the interface state density and the leakage current but a SiO2 interlayer grew too.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
ABSTRACT
Microwave and Optical Technology Letters, 2000
Design of a novel compact bandstop filter composed on an open-loop-ring resonator and a defected ... more Design of a novel compact bandstop filter composed on an open-loop-ring resonator and a defected ground structure (DGS) for coplanar waveguide is proposed and investigated. A simple coplanar open-loop-ring resonator has been designed and tested for the stop-band from 3.9 to 4.3 GHz with tree transmission zeroes inside the stop-band. Two almost symmetrical poles are obtained on both sides of the stopband. Then the proposed broad band bandstop filter based on the one open-loop-ring resonator has been transformed to the bandstop filter with a narrower stop-band but with improved pass-and stop-band characteristics. It is realized by adding a conventional rectangular DGS slot inside the open-loop-ring. The equivalent circuit model has been proposed to describe the behaviour of the bandstop filters. The improved bandstop filter introduces the stop-band from 3.75 to 5.3 GHz with two transmission zeroes within and more than À20 dB rejection. The total size of the proposed structure is 13.8 Â 13.4 mm 2 . Both bandstop filters have been fabricated and measured. Measurements are in good agreement with simulation results.
![Research paper thumbnail of Di-μ-oxido-bis[bis(diisopropylacetamidinato)-κ N ;κ 2 N , N ′-germanium(IV)]](https://attachments.academia-assets.com/42103619/thumbnails/1.jpg)
](Acta Crystallographica Section E Structure Reports Online, 2013
The title compound, [Ge2(C8H17N2)4O2], crystallizes with imposed twofold symmetry, which allows t... more The title compound, [Ge2(C8H17N2)4O2], crystallizes with imposed twofold symmetry, which allows the monodentate amidinate ligands to be arranged in a cisoid fashion. The independent Ge-O distances within the central Ge2O2 ring, which is essentially planar (r.m.s. deviation = 0.039 Å), are 1.7797 (8) and 1.8568 (8) Å. The germanium centres adopt a distorted trigonal-bipyramidal geometry, being coordinated by the two O atoms and by one bidentate and one monodentate amidinate ligand (three N atoms). One N-isopropyl group is disordered over two positions; these are mutually exclusive because of 'collisions' between symmetry-equivalent methyl groups and thus each has 0.5 occupancy.
2006 Asia-Pacific Microwave Conference, 2006
Low actuation-voltage and high reliable microelectromechanical systems (MEMS) shunt capacitive an... more Low actuation-voltage and high reliable microelectromechanical systems (MEMS) shunt capacitive and shunt resistive switches are in this paper proposed. Electrostatic-mechanical coupling using finite element method (FEM) and full-wave electromagnetic (EM) analyses have been performed. The mechanical design of a low spring-constant switch structure has been optimized by calculating the dependence of the actuation voltage on the membrane shape, material properties and geometrical sizes. The proposed switches, based on Al metallization membrane, show a pull-in voltage around 7 and 13 Volts with 0 and 20 MPa residual stresses, respectively. The simulated insertion losses are less than 0.25 dB up to 40GHz with a return loss of about 20 dB in the ONstate. The isolations in the OFF-state for the capacitive-switch are greater than 20 and 35 dB at 12 and 40 GHz, respectively. The shunt resistive switch theoretically works from zero frequency with isolation greater than 25 dB up to 40 GHz. The fabrication of those switches is compatible with standard CMOS technology and they are in process. Index Terms -Low-actuation voltage, MEMS, Pull-in, RF MEMS switch.
2009 German Microwave Conference, 2009
Abstract In this paper a compact low-pass filter (LPF) composed on arrowhead-DGS slots has been p... more Abstract In this paper a compact low-pass filter (LPF) composed on arrowhead-DGS slots has been proposed and implemented. Triangle-shaped slot is investigated and adapted to tighten the coupling of arrowheads in order to minimize the size of a structure and improve a LPF performance. The measured insertion loss is less than 0.8 dB throughout the pass band from DC up to 3 GHz. Only three cells of the proposed structure are required for a wide stop-band with more than-20 dB stop-band rejection from 4.0 GHz up to 14.0 GHz. The ...
ECS Transactions, 2007
ABSTRACT
ECS Transactions, 2007
ABSTRACT The strontium tantalate (STaO) films were deposited on silicon substrates by liquid deli... more ABSTRACT The strontium tantalate (STaO) films were deposited on silicon substrates by liquid delivery (LD) metalorganic chemical vapor deposition (MOCVD) using Sr[Ta(OEt)5(OC2H4OMe)]2 as a single strontium-tantalum precursor. The deposition of the films was investigated in dependence on process conditions, such as substrate temperature, pressure, and concentration of the precursor. The growth rate varied from 4 to 300 nm/h and the highest rates were observed at the higher values of process temperature, pressure, and concentration of the precursor. As- deposited STaO films were completely amorphous. Crystallization occurs only after annealing at higher temperatures (~1000{degree sign}C). Additionally, annealing reduced the interface state density and the leakage current but a SiO2 interlayer grew too.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
ABSTRACT
Microwave and Optical Technology Letters, 2000
Design of a novel compact bandstop filter composed on an open-loop-ring resonator and a defected ... more Design of a novel compact bandstop filter composed on an open-loop-ring resonator and a defected ground structure (DGS) for coplanar waveguide is proposed and investigated. A simple coplanar open-loop-ring resonator has been designed and tested for the stop-band from 3.9 to 4.3 GHz with tree transmission zeroes inside the stop-band. Two almost symmetrical poles are obtained on both sides of the stopband. Then the proposed broad band bandstop filter based on the one open-loop-ring resonator has been transformed to the bandstop filter with a narrower stop-band but with improved pass-and stop-band characteristics. It is realized by adding a conventional rectangular DGS slot inside the open-loop-ring. The equivalent circuit model has been proposed to describe the behaviour of the bandstop filters. The improved bandstop filter introduces the stop-band from 3.75 to 5.3 GHz with two transmission zeroes within and more than À20 dB rejection. The total size of the proposed structure is 13.8 Â 13.4 mm 2 . Both bandstop filters have been fabricated and measured. Measurements are in good agreement with simulation results.
Acta Crystallographica Section E Structure Reports Online, 2013
The title compound, [Ge2(C8H17N2)4O2], crystallizes with imposed twofold symmetry, which allows t... more The title compound, [Ge2(C8H17N2)4O2], crystallizes with imposed twofold symmetry, which allows the monodentate amidinate ligands to be arranged in a cisoid fashion. The independent Ge-O distances within the central Ge2O2 ring, which is essentially planar (r.m.s. deviation = 0.039 Å), are 1.7797 (8) and 1.8568 (8) Å. The germanium centres adopt a distorted trigonal-bipyramidal geometry, being coordinated by the two O atoms and by one bidentate and one monodentate amidinate ligand (three N atoms). One N-isopropyl group is disordered over two positions; these are mutually exclusive because of 'collisions' between symmetry-equivalent methyl groups and thus each has 0.5 occupancy.
2006 Asia-Pacific Microwave Conference, 2006
Low actuation-voltage and high reliable microelectromechanical systems (MEMS) shunt capacitive an... more Low actuation-voltage and high reliable microelectromechanical systems (MEMS) shunt capacitive and shunt resistive switches are in this paper proposed. Electrostatic-mechanical coupling using finite element method (FEM) and full-wave electromagnetic (EM) analyses have been performed. The mechanical design of a low spring-constant switch structure has been optimized by calculating the dependence of the actuation voltage on the membrane shape, material properties and geometrical sizes. The proposed switches, based on Al metallization membrane, show a pull-in voltage around 7 and 13 Volts with 0 and 20 MPa residual stresses, respectively. The simulated insertion losses are less than 0.25 dB up to 40GHz with a return loss of about 20 dB in the ONstate. The isolations in the OFF-state for the capacitive-switch are greater than 20 and 35 dB at 12 and 40 GHz, respectively. The shunt resistive switch theoretically works from zero frequency with isolation greater than 25 dB up to 40 GHz. The fabrication of those switches is compatible with standard CMOS technology and they are in process. Index Terms -Low-actuation voltage, MEMS, Pull-in, RF MEMS switch.