Muyar Htun | Simon Fraser University (original) (raw)
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This project investigates the photo sensitive characteristics of Cu O-ZnO interface from painted ... more This project investigates the photo sensitive characteristics of Cu O-ZnO interface from painted cuprous oxide on copper. Existing methods of producing Cu 2 O-ZnO photosensitive layers are complex, costly and require high temperature conditions. The paintable medium developed in our approach was a simple mixture of cuprous chloride, adhered hydrate cuprous oxide, de-ionised water and acetone. The prepared medium was painted on a clean copper sheet. The device was then heated at 75ᵒC for 30 minutes. The ZnO layer was electroplated in zinc nitrate solution at 72ᵒC. The surfaces of Cu 2 O and ZnO were analyzed by SEM and the results showed homogenous surface morphology. The photosensitivity of the manufactured Cu 2 O-ZnO was also characterized using a semiconductor parameter analyser (SPA) and a light source. The manufactured devices exhibited ohmic (I-V) characteristics in the dark. Upon illumination, the current density increased by 40 %. Samples that were annealed for twohours at 75°C before ZnO electrodeposition, exhibited a solar-cell type (I-V) response.
This project investigates the photo sensitive characteristics of Cu O-ZnO interface from painted ... more This project investigates the photo sensitive characteristics of Cu O-ZnO interface from painted cuprous oxide on copper. Existing methods of producing Cu 2 O-ZnO photosensitive layers are complex, costly and require high temperature conditions. The paintable medium developed in our approach was a simple mixture of cuprous chloride, adhered hydrate cuprous oxide, de-ionised water and acetone. The prepared medium was painted on a clean copper sheet. The device was then heated at 75ᵒC for 30 minutes. The ZnO layer was electroplated in zinc nitrate solution at 72ᵒC. The surfaces of Cu 2 O and ZnO were analyzed by SEM and the results showed homogenous surface morphology. The photosensitivity of the manufactured Cu 2 O-ZnO was also characterized using a semiconductor parameter analyser (SPA) and a light source. The manufactured devices exhibited ohmic (I-V) characteristics in the dark. Upon illumination, the current density increased by 40 %. Samples that were annealed for twohours at 75°C before ZnO electrodeposition, exhibited a solar-cell type (I-V) response.