Nora Boyd | Siena College (original) (raw)

Nora Boyd

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Research paper thumbnail of Focal-plane detector system for the KATRIN experiment

The focal-plane detector system for the KArlsruhe TRItium Neutrino (KATRIN) experiment consists o... more The focal-plane detector system for the KArlsruhe TRItium Neutrino (KATRIN) experiment consists of a multi-pixel silicon p-in -diode array, custom readout electronics, two superconducting solenoid magnets, an ultra high-vacuum system, a high-vacuum system, calibration and monitoring devices, a scintillating veto, and a custom data-acquisition system. It is designed to detect the low-energy electrons selected by the KATRIN main spectrometer. We describe the system and summarize its performance after its final installation.

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Research paper thumbnail of Dead layer on silicon p-i-n diode charged-particle detectors

Semiconductor detectors in general have a dead layer at their surfaces that is either a result of... more Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

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Research paper thumbnail of Search for the second forbidden beta decay of 8B to the ground state of 8Be

Physical Review C, 2007

A significant decay branch of 8B to the ground state of 8Be would extend the solar neutrino spect... more A significant decay branch of 8B to the ground state of 8Be would extend the solar neutrino spectrum to higher energies than anticipated in the standard solar models. These high-energy neutrinos would affect current neutrino oscillation results and also would be a background to measurements of the hep process. We have measured the delayed alpha particles from the decay of 8B, with the goal of observing the two 46-keV alpha particles arising from the ground-state decay. The 8B was produced using an in-flight radioactive beam technique. It was implanted in a silicon PIN-diode detector that was capable of identifying the alpha-particles from the 8Be ground state. From this measurement we find an upper limit (at 90% confidence level) of 7.3 x 10^{-5} for the branching ratio to the ground state. In addition to describing this measurement, we present a theoretical calculation for this branching ratio.

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Research paper thumbnail of Focal-plane detector system for the KATRIN experiment

The focal-plane detector system for the KArlsruhe TRItium Neutrino (KATRIN) experiment consists o... more The focal-plane detector system for the KArlsruhe TRItium Neutrino (KATRIN) experiment consists of a multi-pixel silicon p-in -diode array, custom readout electronics, two superconducting solenoid magnets, an ultra high-vacuum system, a high-vacuum system, calibration and monitoring devices, a scintillating veto, and a custom data-acquisition system. It is designed to detect the low-energy electrons selected by the KATRIN main spectrometer. We describe the system and summarize its performance after its final installation.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Dead layer on silicon p-i-n diode charged-particle detectors

Semiconductor detectors in general have a dead layer at their surfaces that is either a result of... more Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

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Research paper thumbnail of Search for the second forbidden beta decay of 8B to the ground state of 8Be

Physical Review C, 2007

A significant decay branch of 8B to the ground state of 8Be would extend the solar neutrino spect... more A significant decay branch of 8B to the ground state of 8Be would extend the solar neutrino spectrum to higher energies than anticipated in the standard solar models. These high-energy neutrinos would affect current neutrino oscillation results and also would be a background to measurements of the hep process. We have measured the delayed alpha particles from the decay of 8B, with the goal of observing the two 46-keV alpha particles arising from the ground-state decay. The 8B was produced using an in-flight radioactive beam technique. It was implanted in a silicon PIN-diode detector that was capable of identifying the alpha-particles from the 8Be ground state. From this measurement we find an upper limit (at 90% confidence level) of 7.3 x 10^{-5} for the branching ratio to the ground state. In addition to describing this measurement, we present a theoretical calculation for this branching ratio.

Bookmarks Related papers MentionsView impact

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