P. Grunberg | Université Sorbonne Paris Nord / Sorbonne Paris Nord University (original) (raw)

Papers by P. Grunberg

Research paper thumbnail of Layered magnetic structures: magnetoresistance due to antiparallel alignment

Vacuum, 1990

Co-Au-Co sandwiches has been investigated experimentally and theoretically. A significant increas... more Co-Au-Co sandwiches has been investigated experimentally and theoretically. A significant increase of the resistance has been observed when the magnetizations of the ferromagnetic films rotate from parallel to antiparallel alignment.

Research paper thumbnail of Domain analysis in epitaxial iron-aluminum and iron-gold sandwiches with oscillatory exchange

IEEE Transactions on Magnetics, 1993

Abstract Epitaxially grown iron-iron sandwiches with wedge-shaped gold and aluminum interlayers a... more Abstract Epitaxially grown iron-iron sandwiches with wedge-shaped gold and aluminum interlayers are investigated by Kerr microscopy. While in the Fe-Au-Fe sample an oscillatory exchange (which appears, however, of a rather weak and irregular nature) interaction is ...

Research paper thumbnail of Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

Electronics Letters, 1993

... 1992, Takamatsu, Kagawa, Japan 3 muR, D. P., wnmLu, R. u., ENSTROM, R. E, STEWART, T. R., OIG... more ... 1992, Takamatsu, Kagawa, Japan 3 muR, D. P., wnmLu, R. u., ENSTROM, R. E, STEWART, T. R., OIGIU-SEPPE, N. G., HAWRYLO, F. z ... lo!-112 8 SHIW, c., MANTZ, I., LEE, H., ACKLEY, D., and ENGELMANN, R.: 'Anomalous dependence of threshold current on stripe width in ...

Research paper thumbnail of Liquid phase epitaxial growth of AlGaAsSb on GaSb

Journal of Crystal Growth, 1992

1_~As~Sb1_(x 0.37 and 0.47) alloy has been grown on GaSb substrate by liquid phase epitaxy from m... more 1_~As~Sb1_(x 0.37 and 0.47) alloy has been grown on GaSb substrate by liquid phase epitaxy from melts containing X'(Al) = 0.02 and 0.03. Satisfactory layers could be obtained at T°= 605°Cusing small supercooling (iT = I -4°C) and small As content in the melt (X t(As) = l0~~). The conditions of growing lattice-matched structures have been theoretically evaluated and experimentally determined. Growth kinetics obey the law: d = KziTt'~2,which is characteristic of a diffusion-limited growth, with K=0.054 jim°C' s"2 for (100) orientation and K=0.036~m0C~~_l/2 for the (111)B. Undoped layers are p-type with a residual carrier concentration p 1016 cm3. Photoluminescence measurements at 2 K show excitonic and phonon assisted lines, characteristic of good quality indirect gap material. High doping levels were achieved by Ge doping (p = 1019 cm3) and Te doping(n = 2x10'8 cm3).

Research paper thumbnail of Layered magnetic structures: magnetoresistance due to antiparallel alignment

Vacuum, 1990

Co-Au-Co sandwiches has been investigated experimentally and theoretically. A significant increas... more Co-Au-Co sandwiches has been investigated experimentally and theoretically. A significant increase of the resistance has been observed when the magnetizations of the ferromagnetic films rotate from parallel to antiparallel alignment.

Research paper thumbnail of Domain analysis in epitaxial iron-aluminum and iron-gold sandwiches with oscillatory exchange

IEEE Transactions on Magnetics, 1993

Abstract Epitaxially grown iron-iron sandwiches with wedge-shaped gold and aluminum interlayers a... more Abstract Epitaxially grown iron-iron sandwiches with wedge-shaped gold and aluminum interlayers are investigated by Kerr microscopy. While in the Fe-Au-Fe sample an oscillatory exchange (which appears, however, of a rather weak and irregular nature) interaction is ...

Research paper thumbnail of Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

Electronics Letters, 1993

... 1992, Takamatsu, Kagawa, Japan 3 muR, D. P., wnmLu, R. u., ENSTROM, R. E, STEWART, T. R., OIG... more ... 1992, Takamatsu, Kagawa, Japan 3 muR, D. P., wnmLu, R. u., ENSTROM, R. E, STEWART, T. R., OIGIU-SEPPE, N. G., HAWRYLO, F. z ... lo!-112 8 SHIW, c., MANTZ, I., LEE, H., ACKLEY, D., and ENGELMANN, R.: 'Anomalous dependence of threshold current on stripe width in ...

Research paper thumbnail of Liquid phase epitaxial growth of AlGaAsSb on GaSb

Journal of Crystal Growth, 1992

1_~As~Sb1_(x 0.37 and 0.47) alloy has been grown on GaSb substrate by liquid phase epitaxy from m... more 1_~As~Sb1_(x 0.37 and 0.47) alloy has been grown on GaSb substrate by liquid phase epitaxy from melts containing X'(Al) = 0.02 and 0.03. Satisfactory layers could be obtained at T°= 605°Cusing small supercooling (iT = I -4°C) and small As content in the melt (X t(As) = l0~~). The conditions of growing lattice-matched structures have been theoretically evaluated and experimentally determined. Growth kinetics obey the law: d = KziTt'~2,which is characteristic of a diffusion-limited growth, with K=0.054 jim°C' s"2 for (100) orientation and K=0.036~m0C~~_l/2 for the (111)B. Undoped layers are p-type with a residual carrier concentration p 1016 cm3. Photoluminescence measurements at 2 K show excitonic and phonon assisted lines, characteristic of good quality indirect gap material. High doping levels were achieved by Ge doping (p = 1019 cm3) and Te doping(n = 2x10'8 cm3).