D. F Bogorin | Syracuse University (original) (raw)

Papers by D. F Bogorin

Physical Review Letters, 2016

Journal of Low Temperature Physics, 2008

Energy & Environmental Science, 2012

ABSTRACT Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a pot... more ABSTRACT Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a potential route to inexpensive, high-efficiency solar cells. Here, we report epitaxial growth of Si films on low-cost, flexible, biaxially-textured Ni-W substrates. A robust buffer architecture comprised of multiple epitaxial oxide layers has been developed to grow high quality, heteroepitaxial Si films without any undesired reaction between the Si film and the metal substrate and with a single biaxial texture. XRD analysis including ω-scans, φ-scans, and pole figures confirms that the buffers and silicon are all epitaxial, with excellent cube-on-cube epitaxy. A photo-conversion efficiency of 1.1% is demonstrated from a proof-of-concept heteroepitaxial film Si solar cell.

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006

The University of Miami has recently started a program to fabricate fully integrated microcalorim... more The University of Miami has recently started a program to fabricate fully integrated microcalorimeter arrays using iridium thin films as Transition Edge Sensors (TES) and tin mushroom absorbers. We present our preliminary results in both areas.

Review of Scientific Instruments, 2010

AIP Conference Proceedings, 2009

The physical properties of thin multilayer structures are deeply related to the crystalline quali... more The physical properties of thin multilayer structures are deeply related to the crystalline quality and stoichiometry of the films. The interface roughness/mixing require a detailed study to determine its influence on the growth processes and surface topography. This is an important aspect when we have lattice mismatch between the superconducting thin-films and the substrates, and a high reliability/reproducibility is required

The MARE experiment is designed to measure the mass of the neutrino with sub-eV sensitivity by me... more The MARE experiment is designed to measure the mass of the neutrino with sub-eV sensitivity by measuring the beta decay of 187Re with cryogenic microcalorimeters. A preliminary analysis shows that, to achieve the necessary statistics, between 10,000 and 50,000 detectors are likely necessary. We have fabricated and characterized Iridium transition edge sensors with high reproducibility and uniformity for such a

Nature Communications, 2010

In recent years, reversible control over metal-insulator transition has been shown, at the nanosc... more In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO(3)/SrTiO(3) (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO(3) bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.

Nature Communications, 2013

Journal of Low Temperature Physics, 2008

Journal of Low Temperature Physics, 2008

It has been demonstrated by Cen. et al that a conducting nanowire can be written or erased at the... more It has been demonstrated by Cen. et al that a conducting nanowire can be written or erased at the interface between LaAlO$_{3}$ and SrTiO$_{3}$, using a conducting AFM writing technique.\footnote{C. Cen, S. Thiel, KE Andersen, CS Hellberg, J. Mannhart, and J. Levy, ...

The two-dimensional electron gas (2DEG) that forms at the interface between two semiconductors or... more The two-dimensional electron gas (2DEG) that forms at the interface between two semiconductors or between a semiconductor and oxide is currently the basis for some of the most useful electronic devices. We are able to control the 2DEG interface between LaAlO3/SrTiO3 with nanoscale precision and create transistors, nanodiodes and other nanostructures. Future scaling of oxide nanoelectronics requires scaling to wafer sizes larger than what can be provided from SrTiO3. (LaAlO3)0.3--(Sr2AlTaO3)0.7 (LSAT) substrates can allow for coherently strained LaAlO3/SrTiO3 heterostructures to be created. A sharp insulator to metal transition occurs at 8 uc LaAlO3 thicknesses, in contrast to what is observed for unstrained SrTiO3 substrates. We describe the properties of nanoscale structures created at the 2DEG interface of LaAlO3/SrTiO3 grown on LSAT wafers and compare them with structures grown on bulk SrTiO3 substrates.

Oxide heterostructures formed from ultrathin layers of LaAlO3 grown on TiO2-terminated SrTiO3, co... more Oxide heterostructures formed from ultrathin layers of LaAlO3 grown on TiO2-terminated SrTiO3, combined with a reversible nanoscale patterning technique, provide a versatile platform for nanoscale control at the single-electron limit. Here we demonstrate the creation and characterization of "sketched" single-electron transistors made from ultrasmall (1-2 nm) quantum dots. Shell filling from N=0 up to N=2 electrons by single-electron tunneling is

Physical Review Letters, 2016

Journal of Low Temperature Physics, 2008

Energy & Environmental Science, 2012

ABSTRACT Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a pot... more ABSTRACT Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a potential route to inexpensive, high-efficiency solar cells. Here, we report epitaxial growth of Si films on low-cost, flexible, biaxially-textured Ni-W substrates. A robust buffer architecture comprised of multiple epitaxial oxide layers has been developed to grow high quality, heteroepitaxial Si films without any undesired reaction between the Si film and the metal substrate and with a single biaxial texture. XRD analysis including ω-scans, φ-scans, and pole figures confirms that the buffers and silicon are all epitaxial, with excellent cube-on-cube epitaxy. A photo-conversion efficiency of 1.1% is demonstrated from a proof-of-concept heteroepitaxial film Si solar cell.

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006

The University of Miami has recently started a program to fabricate fully integrated microcalorim... more The University of Miami has recently started a program to fabricate fully integrated microcalorimeter arrays using iridium thin films as Transition Edge Sensors (TES) and tin mushroom absorbers. We present our preliminary results in both areas.

Review of Scientific Instruments, 2010

AIP Conference Proceedings, 2009

The physical properties of thin multilayer structures are deeply related to the crystalline quali... more The physical properties of thin multilayer structures are deeply related to the crystalline quality and stoichiometry of the films. The interface roughness/mixing require a detailed study to determine its influence on the growth processes and surface topography. This is an important aspect when we have lattice mismatch between the superconducting thin-films and the substrates, and a high reliability/reproducibility is required

The MARE experiment is designed to measure the mass of the neutrino with sub-eV sensitivity by me... more The MARE experiment is designed to measure the mass of the neutrino with sub-eV sensitivity by measuring the beta decay of 187Re with cryogenic microcalorimeters. A preliminary analysis shows that, to achieve the necessary statistics, between 10,000 and 50,000 detectors are likely necessary. We have fabricated and characterized Iridium transition edge sensors with high reproducibility and uniformity for such a

Nature Communications, 2010

In recent years, reversible control over metal-insulator transition has been shown, at the nanosc... more In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO(3)/SrTiO(3) (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO(3) bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.

Nature Communications, 2013

Journal of Low Temperature Physics, 2008

Journal of Low Temperature Physics, 2008

It has been demonstrated by Cen. et al that a conducting nanowire can be written or erased at the... more It has been demonstrated by Cen. et al that a conducting nanowire can be written or erased at the interface between LaAlO$_{3}$ and SrTiO$_{3}$, using a conducting AFM writing technique.\footnote{C. Cen, S. Thiel, KE Andersen, CS Hellberg, J. Mannhart, and J. Levy, ...

The two-dimensional electron gas (2DEG) that forms at the interface between two semiconductors or... more The two-dimensional electron gas (2DEG) that forms at the interface between two semiconductors or between a semiconductor and oxide is currently the basis for some of the most useful electronic devices. We are able to control the 2DEG interface between LaAlO3/SrTiO3 with nanoscale precision and create transistors, nanodiodes and other nanostructures. Future scaling of oxide nanoelectronics requires scaling to wafer sizes larger than what can be provided from SrTiO3. (LaAlO3)0.3--(Sr2AlTaO3)0.7 (LSAT) substrates can allow for coherently strained LaAlO3/SrTiO3 heterostructures to be created. A sharp insulator to metal transition occurs at 8 uc LaAlO3 thicknesses, in contrast to what is observed for unstrained SrTiO3 substrates. We describe the properties of nanoscale structures created at the 2DEG interface of LaAlO3/SrTiO3 grown on LSAT wafers and compare them with structures grown on bulk SrTiO3 substrates.

Oxide heterostructures formed from ultrathin layers of LaAlO3 grown on TiO2-terminated SrTiO3, co... more Oxide heterostructures formed from ultrathin layers of LaAlO3 grown on TiO2-terminated SrTiO3, combined with a reversible nanoscale patterning technique, provide a versatile platform for nanoscale control at the single-electron limit. Here we demonstrate the creation and characterization of "sketched" single-electron transistors made from ultrasmall (1-2 nm) quantum dots. Shell filling from N=0 up to N=2 electrons by single-electron tunneling is