Eran Socher | Tel Aviv University (original) (raw)
Papers by Eran Socher
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015
2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015
2013 IEEE Antennas and Propagation Society International Symposium (APSURSI), 2013
ABSTRACT When applying the Poynting theorem to the total field over a surface enclosing a receivi... more ABSTRACT When applying the Poynting theorem to the total field over a surface enclosing a receiving antenna, several terms emerge. These include self terms, relating either to the incident or scattered fields as well as a cross term. The terms are sometimes quoted in the literature without proper reference to the cross term, resulting erroneously in violation of energy conservation. In order to reinstate conservation of energy, some ad-hoc remedies have been recently proposed. Below, we attempt to show an orderly development of the Poynting theorem as a whole that needs no further assumptions and naturally satisfies energy conservation.
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), 2013
ABSTRACT
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
A 240 GHz fundamental oscillator is demonstrated using the IBM CMOS SOI 32 nm process. The design... more A 240 GHz fundamental oscillator is demonstrated using the IBM CMOS SOI 32 nm process. The design was based on a Colpitts differential topology, where the gate capacitance of the device is used as a part of the inductorcapacitor tank for tuning. A peak output power level of 0.2 mW (-7 dBm) was achieved, while the total power consumption was 13 mW, reaching a record power efficiency of 1.5 %. A tuning bandwidth of 11 GHz was achieved by changing the gate bias level, while a total tuning range of 13.5 GHz was achieved by controlling both the gate and the drain bias. The design consumes a core area of only 50x80 μm 2 and requires no buffer to drive the external 50 Ω termination.
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), 2013
A wideband 8.5 Gbps transmitter implemented using a 65 nm CMOS technology in V-band (50GHz -75 GH... more A wideband 8.5 Gbps transmitter implemented using a 65 nm CMOS technology in V-band (50GHz -75 GHz) is presented. A BPSK modulation scheme is used, realized by a double balanced Gilbert cell, followed by an output buffer and a matching network. Output power of 5.5 dBm -7.2 dBm was achieved at carrier frequencies of 56GHz -68 GHz. Limited by measurement equipment, BER<10 -12 was achieved for carrier frequencies at the entire V-band with data rates of up to 8.5 Gbps. The design consummes 65 mW and takes up a core area of 225*325 µm 2 .
2014 IEEE MTT-S International Microwave Symposium (IMS2014), 2014
In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is designed and imp... more In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is designed and implemented. First, a CPW on Duroid to W-band aluminum waveguide is realized with a bandwidth of 49 % (67-110 GHz), an average insertion loss of -0.35 dB and reflection loss below -10 dB throughout the entire band. Then, wire-bonding the CMOS G-S-G pads to the Duroid CPW introduces an average 0.2 dB loss in the W-band. A 100 GHz RF signal of a 90nm CMOS VCO was transmitted successfully using this transition with less than 2 dB loss (which includes a 2-cm Duroid CPW line) compared to on chip probing measurement results.
2014 IEEE Radio Frequency Integrated Circuits Symposium, 2014
ABSTRACT We hereby report the design and measurements of a 101-118 GHz 65 nm CMOS transmitter. Th... more ABSTRACT We hereby report the design and measurements of a 101-118 GHz 65 nm CMOS transmitter. The transmitter architecture is based on a two-step upconversion using a single 80 GHz LO with the quadrature phases generated by injection locked frequency dividers. Both BPSK and QPSK modulations with a maximum datarate of 20.6 Gbps are supported. A measured output power of -5 dBm at 115 GHz and an error-vector magnitude of 17.5% for 30 dB conversion-loss downconversion link are obtained. The chip core area is 0.21 mm2 and a DC power consumption of 280 mW.
A method of efficiently extracting the pull-in parameters of an electrostatically activated actua... more A method of efficiently extracting the pull-in parameters of an electrostatically activated actuator. The actuator is modeled as an elastic element. For each of a plurality of deformations of the elastic element, a corresponding voltage is calculated. The highest such voltage is the pull-in voltage of the actuator. The corresponding deformation is the pull-in deformation of the actuator. Each deformation is defined by fixing a displacement of one degree of freedom of the elastic body and calculating corresponding equilibrium ...
2014 IEEE Antennas and Propagation Society International Symposium (APSURSI), 2014
Sensors and Microsystems, 2000
Abstract CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. ... more Abstract CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and corretated-double-sampling (CDS) technique were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect of the CDS circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models, leading to input referred noise of ...
Sensors and Microsystems, 2000
Abstract CMOS compatible integrated thermoelectric sensors were designed and realized using a sta... more Abstract CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside RIE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP&#x27;s down to 0.4 nW/VHz and response times down ...
Sensors and Microsystems, 2000
Abstract A new analytical approach for modelling the pull-in condition of voltage controlled elec... more Abstract A new analytical approach for modelling the pull-in condition of voltage controlled electrostatic actuators (VCEA) with a general single degree of freedom (DOF) and general shape is presented. The presented approach gives a more general view of the pull-in condition in electrostatic actuators. The pull-in condition for an electrostatic actuator is defined in the voltage and degree of freedom plane. Then a general algebraic equation, referred to as the pull-in equation, is derived for the actuator. The solution of this equation ...
IEEE Transactions on Microwave Theory and Techniques, 2015
ABSTRACT A novel technique to extend the tuning range of voltage-controlled oscillators (VCOs) is... more ABSTRACT A novel technique to extend the tuning range of voltage-controlled oscillators (VCOs) is proposed based on magnetic tuning of a transmission line (TL) resonator. A controllable distributed magnetic coupling in a coplanar strip TL is used to tune the TL parameters in general and the inductance in particular, achieving 222% inductance change of the TL at a center frequency of 60 GHz in order to achieve a wide range of frequency tuning. This technique was implemented with a standard cross-coupled pair oscillator, and an additional varactor. The design was implemented in 65-nm CMOS technology, and achieves a tuning range of 55.1–70.4 GHz (24.6%) with a measured average phase noise of −hbox92.2{-}{hbox{92.2}}−hbox92.2 dBc/Hz at 1-MHz offset across the entire band. The power consumption is 21.5 mW, including the output buffer. The VCO core area is 50 mumumu m$,times,$ 155 mumumu m excluding the buffer and 83 mumumum ,times,,times,,times,245 mumumum including the buffer.
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013
We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detect... more We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.
21st IEEE Convention of the Electrical and Electronic Engineers in Israel. Proceedings (Cat. No.00EX377), 2000
Abstract A new design of micromachined inertial sensors, accelerometer and rate-gyroscope, is pre... more Abstract A new design of micromachined inertial sensors, accelerometer and rate-gyroscope, is presented. The design employs the modulated integrative differential optical sensing for the output motion sensing. The former uni-axial design with cantilever suspension is presented. Then the new dual-axis design with “spider” suspensions is discussed. The design and fabrication issues of the new design are discussed, in-light of the results of the uni-axial design. The predicted performance of this device is presented
International Journal of Microwave and Wireless Technologies, 2012
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2012
ABSTRACT
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015
2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015
2013 IEEE Antennas and Propagation Society International Symposium (APSURSI), 2013
ABSTRACT When applying the Poynting theorem to the total field over a surface enclosing a receivi... more ABSTRACT When applying the Poynting theorem to the total field over a surface enclosing a receiving antenna, several terms emerge. These include self terms, relating either to the incident or scattered fields as well as a cross term. The terms are sometimes quoted in the literature without proper reference to the cross term, resulting erroneously in violation of energy conservation. In order to reinstate conservation of energy, some ad-hoc remedies have been recently proposed. Below, we attempt to show an orderly development of the Poynting theorem as a whole that needs no further assumptions and naturally satisfies energy conservation.
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), 2013
ABSTRACT
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
A 240 GHz fundamental oscillator is demonstrated using the IBM CMOS SOI 32 nm process. The design... more A 240 GHz fundamental oscillator is demonstrated using the IBM CMOS SOI 32 nm process. The design was based on a Colpitts differential topology, where the gate capacitance of the device is used as a part of the inductorcapacitor tank for tuning. A peak output power level of 0.2 mW (-7 dBm) was achieved, while the total power consumption was 13 mW, reaching a record power efficiency of 1.5 %. A tuning bandwidth of 11 GHz was achieved by changing the gate bias level, while a total tuning range of 13.5 GHz was achieved by controlling both the gate and the drain bias. The design consumes a core area of only 50x80 μm 2 and requires no buffer to drive the external 50 Ω termination.
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), 2013
A wideband 8.5 Gbps transmitter implemented using a 65 nm CMOS technology in V-band (50GHz -75 GH... more A wideband 8.5 Gbps transmitter implemented using a 65 nm CMOS technology in V-band (50GHz -75 GHz) is presented. A BPSK modulation scheme is used, realized by a double balanced Gilbert cell, followed by an output buffer and a matching network. Output power of 5.5 dBm -7.2 dBm was achieved at carrier frequencies of 56GHz -68 GHz. Limited by measurement equipment, BER<10 -12 was achieved for carrier frequencies at the entire V-band with data rates of up to 8.5 Gbps. The design consummes 65 mW and takes up a core area of 225*325 µm 2 .
2014 IEEE MTT-S International Microwave Symposium (IMS2014), 2014
In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is designed and imp... more In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is designed and implemented. First, a CPW on Duroid to W-band aluminum waveguide is realized with a bandwidth of 49 % (67-110 GHz), an average insertion loss of -0.35 dB and reflection loss below -10 dB throughout the entire band. Then, wire-bonding the CMOS G-S-G pads to the Duroid CPW introduces an average 0.2 dB loss in the W-band. A 100 GHz RF signal of a 90nm CMOS VCO was transmitted successfully using this transition with less than 2 dB loss (which includes a 2-cm Duroid CPW line) compared to on chip probing measurement results.
2014 IEEE Radio Frequency Integrated Circuits Symposium, 2014
ABSTRACT We hereby report the design and measurements of a 101-118 GHz 65 nm CMOS transmitter. Th... more ABSTRACT We hereby report the design and measurements of a 101-118 GHz 65 nm CMOS transmitter. The transmitter architecture is based on a two-step upconversion using a single 80 GHz LO with the quadrature phases generated by injection locked frequency dividers. Both BPSK and QPSK modulations with a maximum datarate of 20.6 Gbps are supported. A measured output power of -5 dBm at 115 GHz and an error-vector magnitude of 17.5% for 30 dB conversion-loss downconversion link are obtained. The chip core area is 0.21 mm2 and a DC power consumption of 280 mW.
A method of efficiently extracting the pull-in parameters of an electrostatically activated actua... more A method of efficiently extracting the pull-in parameters of an electrostatically activated actuator. The actuator is modeled as an elastic element. For each of a plurality of deformations of the elastic element, a corresponding voltage is calculated. The highest such voltage is the pull-in voltage of the actuator. The corresponding deformation is the pull-in deformation of the actuator. Each deformation is defined by fixing a displacement of one degree of freedom of the elastic body and calculating corresponding equilibrium ...
2014 IEEE Antennas and Propagation Society International Symposium (APSURSI), 2014
Sensors and Microsystems, 2000
Abstract CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. ... more Abstract CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and corretated-double-sampling (CDS) technique were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect of the CDS circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models, leading to input referred noise of ...
Sensors and Microsystems, 2000
Abstract CMOS compatible integrated thermoelectric sensors were designed and realized using a sta... more Abstract CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside RIE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP&#x27;s down to 0.4 nW/VHz and response times down ...
Sensors and Microsystems, 2000
Abstract A new analytical approach for modelling the pull-in condition of voltage controlled elec... more Abstract A new analytical approach for modelling the pull-in condition of voltage controlled electrostatic actuators (VCEA) with a general single degree of freedom (DOF) and general shape is presented. The presented approach gives a more general view of the pull-in condition in electrostatic actuators. The pull-in condition for an electrostatic actuator is defined in the voltage and degree of freedom plane. Then a general algebraic equation, referred to as the pull-in equation, is derived for the actuator. The solution of this equation ...
IEEE Transactions on Microwave Theory and Techniques, 2015
ABSTRACT A novel technique to extend the tuning range of voltage-controlled oscillators (VCOs) is... more ABSTRACT A novel technique to extend the tuning range of voltage-controlled oscillators (VCOs) is proposed based on magnetic tuning of a transmission line (TL) resonator. A controllable distributed magnetic coupling in a coplanar strip TL is used to tune the TL parameters in general and the inductance in particular, achieving 222% inductance change of the TL at a center frequency of 60 GHz in order to achieve a wide range of frequency tuning. This technique was implemented with a standard cross-coupled pair oscillator, and an additional varactor. The design was implemented in 65-nm CMOS technology, and achieves a tuning range of 55.1–70.4 GHz (24.6%) with a measured average phase noise of −hbox92.2{-}{hbox{92.2}}−hbox92.2 dBc/Hz at 1-MHz offset across the entire band. The power consumption is 21.5 mW, including the output buffer. The VCO core area is 50 mumumu m$,times,$ 155 mumumu m excluding the buffer and 83 mumumum ,times,,times,,times,245 mumumum including the buffer.
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013
We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detect... more We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.
21st IEEE Convention of the Electrical and Electronic Engineers in Israel. Proceedings (Cat. No.00EX377), 2000
Abstract A new design of micromachined inertial sensors, accelerometer and rate-gyroscope, is pre... more Abstract A new design of micromachined inertial sensors, accelerometer and rate-gyroscope, is presented. The design employs the modulated integrative differential optical sensing for the output motion sensing. The former uni-axial design with cantilever suspension is presented. Then the new dual-axis design with “spider” suspensions is discussed. The design and fabrication issues of the new design are discussed, in-light of the results of the uni-axial design. The predicted performance of this device is presented
International Journal of Microwave and Wireless Technologies, 2012
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2012
ABSTRACT