Run Levinger | Tel Aviv University (original) (raw)

Papers by Run Levinger

IEEE Journal of Solid-State Circuits

2016 IEEE MTT-S International Microwave Symposium (IMS), 2016

IEEE Transactions on Microwave Theory and Techniques, 2016

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015

2015 IEEE MTT-S International Microwave Symposium, 2015

Fully integrated transmitter at E-band frequencies in a superhetrodyne architecture covering the ... more Fully integrated transmitter at E-band frequencies in a superhetrodyne architecture covering the 71-76GHz was designed and fabricated in 0.12μm SiGe technology. The transmitter's front-end includes a power amplifier, image-reject driver, tunable RF attenuator, power detector and IF-to-RF up-converting mixer. A variable gain IF amplifier, quadrature baseband-to-IF modulator, frequency synthesizer and x4 frequency multiplier (quadrupler) are also integrated on-chip. It achieves output power at P1dB of 17.5 to 18.5 dBm, saturated power of 20.5 to 21.5 dBm, up to 39 dB Gain with an analog controlled dynamic range of 30 dB and consumes 1.75 W.

2014 IEEE MTT-S International Microwave Symposium (IMS2014), 2014

ABSTRACT A compact ×2 frequency multiplier covering all ku band is implemented in IBM 0.13μm SiGe... more ABSTRACT A compact ×2 frequency multiplier covering all ku band is implemented in IBM 0.13μm SiGe technology. The transformer coupled circuit uses a common base configuration working in B- class mode and utilizes transmission lines properties to achieve harmonic suppression. The doubler covers a 3dB frequency range between 12.2 GHz to 20.4 GHz with a saturated output power above 9 dBm. The fundamental frequency is suppressed by over 27 dBc and the 4th harmonic is suppressed by more than 25 dBc across frequency band. The core design occupies only 550 μm × 620 μm and consumes 37 mW from a 2.7 V supply.

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013

ABSTRACT An RF to IF down-conversion mixer for the upper 81-86GHz E-BAND frequency range was desi... more ABSTRACT An RF to IF down-conversion mixer for the upper 81-86GHz E-BAND frequency range was designed and fabricated in IBM 0.12μm SiGe technology. The Mixer comprises of a double balanced Gilbert-cell in which the RF signal is driven through a marchand balun into the common base amplifying mixer stage. The mixer exhibits conversion gain of 7dB, SSB noise figure of 12dB and input compression I1dBCP of -10dBm. The low noise figure and high conversion gain of the mixer enables the addition of a highly linear analog controlled attenuator between the mixer and LNA to further improve the linearity of the receiver chain without degrading the noise performance. The mixer area is 0.4mm2 and it consumes 110mW from a 2.7V power supply.

2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), 2013

ABSTRACT An IF to RF up-conversion mixer for the entire E-BAND 71-76 GHz and 81-86 GHz frequency ... more ABSTRACT An IF to RF up-conversion mixer for the entire E-BAND 71-76 GHz and 81-86 GHz frequency range was designed and fabricated in IBM 0.12 μm SiGe technology. The Mixer comprises of a double balanced Gilbert-cell with a degeneration inductor in the amplifying stage for increased linearity. The mixer exhibits conversion gain higher than -2 dB, output compression point above -7 dBm, and LO leakage less than -30 dB. The core mixer area is 0.37 mm2 and consumes 140 mW from a 2.7 V power supply.

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015

2014 IEEE MTT-S International Microwave Symposium (IMS2014), 2014

2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013

ABSTRACT A Ku band frequency synthesizer is designed and implemented in 0.13μm SiGe technology as... more ABSTRACT A Ku band frequency synthesizer is designed and implemented in 0.13μm SiGe technology as a part of an E-band superhetrodyne transceiver chipset. It provides for RF channels of 71–76 GHz in 62.5MHz steps, and features a phase rotating pulse injection division region switching subinteger frequency divider. Output frequency ranges from 15.4 to 16.7 GHz. The measured differential output power is about −6 dBm measured phase noise at 100-kHz 1-MHz and 10MHz is −84, −111 and −131 dBc/Hz, respectively. Reference spurs are at −44 dBc and sub-integer spurs are at −45dBc, with power consumption of 166mW.

2014 9th European Microwave Integrated Circuit Conference, 2014