Renato Bisaro | THALES - Academia.edu (original) (raw)

Papers by Renato Bisaro

Research paper thumbnail of Thermoelectric characterization of nanostructured selenium doped bismuth telluride obtained by a solution route

2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2015

Research paper thumbnail of New strain-relief mechanism in strained III–V structures

Research paper thumbnail of Temperature distributions in III-V microwave power transistors using spatially resolved photoluminescence mapping

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474), 2000

This paper describes a new method for the mapping of local temperatures in the active region of h... more This paper describes a new method for the mapping of local temperatures in the active region of high power III-V semiconductor transistors for microwave applications. The measurement technique involves scanning a focused laser beam at the surface of a chip inside its package, while the photoluminescence (PL) spectra produced are recorded sequentially for each position of the laser beam. The

Research paper thumbnail of Amorphization dependence on the thermal contact between a silicon sample and its substrate during a phosphorus ion implantation at mean energy

Research paper thumbnail of Influence du contact thermique entre échantillon de silicium <111> et support sur le phénomène d'amorphisation lors d'une implantation d'ions phospphore de moyenne énergie

Research paper thumbnail of CHARACTERIZATION OF Ga//0//. //4//7In//0//. //5//3As GROWN LATTICE-MATCHED ON InP SUBSTRATES

Research paper thumbnail of Phases cristallines orientées du poly(fluorure de vinylidène) et leurs propriétés piézoélectriques

Research paper thumbnail of Silicium amorphe préparé par décomposition thermique de silane: propriétés et applications

Research paper thumbnail of Etude de la cristallisation en phase solide de couches minces de silicium implantées

Research paper thumbnail of Dispositif collimateur de rayonnement

Research paper thumbnail of Un double spectromètre à rayons X à déplacements contrôlés par interférométrie Laser

Research paper thumbnail of Orientations préférentielles de croissance dans les films de silicium déposés par LPCVD

Research paper thumbnail of Procédé de fabrication par épitaxie de couches monocristallines de matériaux à paramètres de maille différents

Research paper thumbnail of Dispositif hyperfréquence à réflectivité électroniquement commandable et procédé de fabrication

Research paper thumbnail of Système de contrôle des déplacements angulaires d'un plateau tournant et application à un spectromètre à rayons X

Research paper thumbnail of Epitaxial growth of lithium niobate on (0001) sapphire by pulsed laser deposition

Microelectronic Engineering

Research paper thumbnail of Possibility of the existence of fully oxygenated superconducting YBaCuO films with a tetragonal structure

Revista Mexicana de Fisica

Research paper thumbnail of TRANSMISSION ELECTRON MICROSCOPY STUDY OF THE AS GROWN FULLY OXYGENATED EPITAXIAL YBa2Cu3O7-delta

Research paper thumbnail of HIGH-TEMPERATURE IN-SITU GROWTH BY CATHODIC SPUTTERING OF FULLY OXYGENATED YBACUO THIN-FILMS

Physica C Superconductivity

The structure and oxygen content of YBaCuO thin films were measured at room temperature combining... more The structure and oxygen content of YBaCuO thin films were measured at room temperature combining XRD analysis of individual YBaCuO grains with recently developed IBA techniques. As a function of the conditions of the sample cooling (dT/dt, pO(2)), the similar to 500 nm thick YBaCuO samples grown on LaAlO3 single crystal substrates can exhibit either orthorhombic (ORT) or quasitetragonal (TETR) structure. The former is obtained by low cooling rates at high oxygen pressure (0.2-latm) whereas the later needs a high cooling rates (greater than or equal to 100 degrees C/min) and can be performed at low oxygen pressure. Both type of samples are fury oxygenated (similar to O-7) YBaCuO compounds with Tc onset of 91 K and Delta Tc approximate to 1K. The resistivity of the (TETR) compound is about 3 times higher than that of the (ORT) one and the intercept of the rho(T) curve crosses the axis of the resistivity at a large positive value, as expected for the tetragonal compound of the 1-2-3 f...

Research paper thumbnail of L'épitaxie par jets moléculaires

Research paper thumbnail of Thermoelectric characterization of nanostructured selenium doped bismuth telluride obtained by a solution route

2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2015

Research paper thumbnail of New strain-relief mechanism in strained III–V structures

Research paper thumbnail of Temperature distributions in III-V microwave power transistors using spatially resolved photoluminescence mapping

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474), 2000

This paper describes a new method for the mapping of local temperatures in the active region of h... more This paper describes a new method for the mapping of local temperatures in the active region of high power III-V semiconductor transistors for microwave applications. The measurement technique involves scanning a focused laser beam at the surface of a chip inside its package, while the photoluminescence (PL) spectra produced are recorded sequentially for each position of the laser beam. The

Research paper thumbnail of Amorphization dependence on the thermal contact between a silicon sample and its substrate during a phosphorus ion implantation at mean energy

Research paper thumbnail of Influence du contact thermique entre échantillon de silicium <111> et support sur le phénomène d'amorphisation lors d'une implantation d'ions phospphore de moyenne énergie

Research paper thumbnail of CHARACTERIZATION OF Ga//0//. //4//7In//0//. //5//3As GROWN LATTICE-MATCHED ON InP SUBSTRATES

Research paper thumbnail of Phases cristallines orientées du poly(fluorure de vinylidène) et leurs propriétés piézoélectriques

Research paper thumbnail of Silicium amorphe préparé par décomposition thermique de silane: propriétés et applications

Research paper thumbnail of Etude de la cristallisation en phase solide de couches minces de silicium implantées

Research paper thumbnail of Dispositif collimateur de rayonnement

Research paper thumbnail of Un double spectromètre à rayons X à déplacements contrôlés par interférométrie Laser

Research paper thumbnail of Orientations préférentielles de croissance dans les films de silicium déposés par LPCVD

Research paper thumbnail of Procédé de fabrication par épitaxie de couches monocristallines de matériaux à paramètres de maille différents

Research paper thumbnail of Dispositif hyperfréquence à réflectivité électroniquement commandable et procédé de fabrication

Research paper thumbnail of Système de contrôle des déplacements angulaires d'un plateau tournant et application à un spectromètre à rayons X

Research paper thumbnail of Epitaxial growth of lithium niobate on (0001) sapphire by pulsed laser deposition

Microelectronic Engineering

Research paper thumbnail of Possibility of the existence of fully oxygenated superconducting YBaCuO films with a tetragonal structure

Revista Mexicana de Fisica

Research paper thumbnail of TRANSMISSION ELECTRON MICROSCOPY STUDY OF THE AS GROWN FULLY OXYGENATED EPITAXIAL YBa2Cu3O7-delta

Research paper thumbnail of HIGH-TEMPERATURE IN-SITU GROWTH BY CATHODIC SPUTTERING OF FULLY OXYGENATED YBACUO THIN-FILMS

Physica C Superconductivity

The structure and oxygen content of YBaCuO thin films were measured at room temperature combining... more The structure and oxygen content of YBaCuO thin films were measured at room temperature combining XRD analysis of individual YBaCuO grains with recently developed IBA techniques. As a function of the conditions of the sample cooling (dT/dt, pO(2)), the similar to 500 nm thick YBaCuO samples grown on LaAlO3 single crystal substrates can exhibit either orthorhombic (ORT) or quasitetragonal (TETR) structure. The former is obtained by low cooling rates at high oxygen pressure (0.2-latm) whereas the later needs a high cooling rates (greater than or equal to 100 degrees C/min) and can be performed at low oxygen pressure. Both type of samples are fury oxygenated (similar to O-7) YBaCuO compounds with Tc onset of 91 K and Delta Tc approximate to 1K. The resistivity of the (TETR) compound is about 3 times higher than that of the (ORT) one and the intercept of the rho(T) curve crosses the axis of the resistivity at a large positive value, as expected for the tetragonal compound of the 1-2-3 f...

Research paper thumbnail of L'épitaxie par jets moléculaires