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Papers by figen boz

Research paper thumbnail of ELEKTRİK ALAN ALTINDA ÜÇLÜ GaAs/AlxGa1-xAs KUANTUM KUYU-TELLERİNDE BİR HİDROJENİK YABANCI ATOMUN BAĞLANMA ENERJİSİ

Tel sisteminin ekseni boyunca dik uygulanan bir dis elektrik alan etkisine maruz kalan uclu GaAs/... more Tel sisteminin ekseni boyunca dik uygulanan bir dis elektrik alan etkisine maruz kalan uclu GaAs/AlxGa1-xAs kuantum kuyu tel sisteminde, hidrojenik yabanci atomun taban durum baglanma enerjisi calisildi. Elektrik alan etkisinde, valans subband enerjileri ve dalga fonksiyonlari dorduncu derece Runge-Kutta metodu kullanilarak hesaplandi. Uclu GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabanci atomun baglanma enerjisi icin varyasyonel metot kullanilmistir. Baglanma enerjisi hesaplari tel kalinliginin, elektrik alanin ve yabanci atomun konumunun fonksiyonu olarak incelenmistir. Uclu GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabanci atomun baglanma enerjisi icin numerik sonuclar keskin bir artma veya azalma gosterir ki bu uygun sartlar mevcut oldugunda devre elemanlari uygulamalarinda onemli olabilir.

Research paper thumbnail of Theoretical Suggestions of Resonant Tunneling Diodes and Laser Field Effects on Their Current-Voltage Characteristics

Superlattices and Microstructures, 2019

Abstract Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theore... more Abstract Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theoretically suggested diodes are classified according to their local potentials differed by the doping concentrations. The electronic properties of the diodes are explored in the framework of numerical calculations. In addition, the laser field effects on the latter properties are reported. They show that the laser field application enriches the functionality of these devices in applications.

Research paper thumbnail of The electronic properties of a coaxial square GaAs/AlxGa1−xAs quantum well wire in an electric field

Physica E: Low-dimensional Systems and Nanostructures, 2009

Research paper thumbnail of Electron transmission in symmetric and asymmetric double-barrier structures controlled by laser fields

Superlattices and Microstructures, 2015

ABSTRACT The potential profiles of symmetric and asymmetric rectangular double-barrier structures... more ABSTRACT The potential profiles of symmetric and asymmetric rectangular double-barrier structures made of (Ga, Al)As/ GaAs and the transmission coefficient of an electron in these systems have been investigated under intense laser field. The results show that the field alters the potential profile, and the transmission coefficient can thus be controlled. The transmission at the first resonance energy for the symmetric structure is higher than that of the asymmetric structure. Therefore, the symmetric design is feasible. The properties exhibited in this work may establish guidance to device applications.

Research paper thumbnail of Energy levels of GaAs/Al x Ga 1-x As/AlAs spherical quantum dot with an impurity

Applied Surface Science, 2016

Abstract We have calculated the energy levels and the radial probability distributions of an elec... more Abstract We have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/AlxGa1-xAs/AlAs. The numerical method used is the fourth-order Runge–Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of AlxGa1-xAs spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/AlxGa1-xAs/AlAs quantum dot.

Research paper thumbnail of Dü?ük boyutlu yap?larda yabanc? atom problemi ve eksitonlar

Research paper thumbnail of Laser field-driven potential profiles of double quantum wells

Physics Letters A, 2012

ABSTRACT We study the potential profiles of double quantum wells with different geometries. The b... more ABSTRACT We study the potential profiles of double quantum wells with different geometries. The binding energy of an impurity under a laser field and its simultaneous application with a magnetic field is calculated by means of variational techniques. It is shown that the total potential of the structure suggests a strong control mechanism on the binding energy.

Research paper thumbnail of Electric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/Al xGa1−x As quantum well-wires

Superlattices and Microstructures, 2001

Research paper thumbnail of Electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in a coaxial quantum well wire

Physica E: Low-dimensional Systems and Nanostructures, 2005

Research paper thumbnail of The binding energy of a hydrogenic impurity in triple GaAs/AlxGa1-xAs quantum well-wires under applied electric field

Research paper thumbnail of The multilayered spherical quantum dot under a magnetic field

Applied Surface Science, 2010

Research paper thumbnail of Geometric effects on energy states of a hydrogenic impurity in multilayered spherical quantum dot

Applied Surface Science, 2009

Research paper thumbnail of Electric and magnetic field effects on the binding energy of a hydrogenic impurity in quantum well wires with different shapes

Superlattices and Microstructures, 2008

In this work, we directly calculate the ground state energies for an electron in quantum well wir... more In this work, we directly calculate the ground state energies for an electron in quantum well wires (QWWs) with different shapes in the presence of applied electric and magnetic fields using the finite difference method. Then, we study the ground state binding energy of a hydrogenic impurity with a variational approach. We obtain the binding energy for QWWs consisting of

Research paper thumbnail of ELEKTRİK ALAN ALTINDA ÜÇLÜ GaAs/AlxGa1-xAs KUANTUM KUYU-TELLERİNDE BİR HİDROJENİK YABANCI ATOMUN BAĞLANMA ENERJİSİ

Tel sisteminin ekseni boyunca dik uygulanan bir dis elektrik alan etkisine maruz kalan uclu GaAs/... more Tel sisteminin ekseni boyunca dik uygulanan bir dis elektrik alan etkisine maruz kalan uclu GaAs/AlxGa1-xAs kuantum kuyu tel sisteminde, hidrojenik yabanci atomun taban durum baglanma enerjisi calisildi. Elektrik alan etkisinde, valans subband enerjileri ve dalga fonksiyonlari dorduncu derece Runge-Kutta metodu kullanilarak hesaplandi. Uclu GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabanci atomun baglanma enerjisi icin varyasyonel metot kullanilmistir. Baglanma enerjisi hesaplari tel kalinliginin, elektrik alanin ve yabanci atomun konumunun fonksiyonu olarak incelenmistir. Uclu GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabanci atomun baglanma enerjisi icin numerik sonuclar keskin bir artma veya azalma gosterir ki bu uygun sartlar mevcut oldugunda devre elemanlari uygulamalarinda onemli olabilir.

Research paper thumbnail of Theoretical Suggestions of Resonant Tunneling Diodes and Laser Field Effects on Their Current-Voltage Characteristics

Superlattices and Microstructures, 2019

Abstract Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theore... more Abstract Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theoretically suggested diodes are classified according to their local potentials differed by the doping concentrations. The electronic properties of the diodes are explored in the framework of numerical calculations. In addition, the laser field effects on the latter properties are reported. They show that the laser field application enriches the functionality of these devices in applications.

Research paper thumbnail of The electronic properties of a coaxial square GaAs/AlxGa1−xAs quantum well wire in an electric field

Physica E: Low-dimensional Systems and Nanostructures, 2009

Research paper thumbnail of Electron transmission in symmetric and asymmetric double-barrier structures controlled by laser fields

Superlattices and Microstructures, 2015

ABSTRACT The potential profiles of symmetric and asymmetric rectangular double-barrier structures... more ABSTRACT The potential profiles of symmetric and asymmetric rectangular double-barrier structures made of (Ga, Al)As/ GaAs and the transmission coefficient of an electron in these systems have been investigated under intense laser field. The results show that the field alters the potential profile, and the transmission coefficient can thus be controlled. The transmission at the first resonance energy for the symmetric structure is higher than that of the asymmetric structure. Therefore, the symmetric design is feasible. The properties exhibited in this work may establish guidance to device applications.

Research paper thumbnail of Energy levels of GaAs/Al x Ga 1-x As/AlAs spherical quantum dot with an impurity

Applied Surface Science, 2016

Abstract We have calculated the energy levels and the radial probability distributions of an elec... more Abstract We have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/AlxGa1-xAs/AlAs. The numerical method used is the fourth-order Runge–Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of AlxGa1-xAs spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/AlxGa1-xAs/AlAs quantum dot.

Research paper thumbnail of Dü?ük boyutlu yap?larda yabanc? atom problemi ve eksitonlar

Research paper thumbnail of Laser field-driven potential profiles of double quantum wells

Physics Letters A, 2012

ABSTRACT We study the potential profiles of double quantum wells with different geometries. The b... more ABSTRACT We study the potential profiles of double quantum wells with different geometries. The binding energy of an impurity under a laser field and its simultaneous application with a magnetic field is calculated by means of variational techniques. It is shown that the total potential of the structure suggests a strong control mechanism on the binding energy.

Research paper thumbnail of Electric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/Al xGa1−x As quantum well-wires

Superlattices and Microstructures, 2001

Research paper thumbnail of Electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in a coaxial quantum well wire

Physica E: Low-dimensional Systems and Nanostructures, 2005

Research paper thumbnail of The binding energy of a hydrogenic impurity in triple GaAs/AlxGa1-xAs quantum well-wires under applied electric field

Research paper thumbnail of The multilayered spherical quantum dot under a magnetic field

Applied Surface Science, 2010

Research paper thumbnail of Geometric effects on energy states of a hydrogenic impurity in multilayered spherical quantum dot

Applied Surface Science, 2009

Research paper thumbnail of Electric and magnetic field effects on the binding energy of a hydrogenic impurity in quantum well wires with different shapes

Superlattices and Microstructures, 2008

In this work, we directly calculate the ground state energies for an electron in quantum well wir... more In this work, we directly calculate the ground state energies for an electron in quantum well wires (QWWs) with different shapes in the presence of applied electric and magnetic fields using the finite difference method. Then, we study the ground state binding energy of a hydrogenic impurity with a variational approach. We obtain the binding energy for QWWs consisting of

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