figen boz | Trakya University (original) (raw)
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Papers by figen boz
Tel sisteminin ekseni boyunca dik uygulanan bir dis elektrik alan etkisine maruz kalan uclu GaAs/... more Tel sisteminin ekseni boyunca dik uygulanan bir dis elektrik alan etkisine maruz kalan uclu GaAs/AlxGa1-xAs kuantum kuyu tel sisteminde, hidrojenik yabanci atomun taban durum baglanma enerjisi calisildi. Elektrik alan etkisinde, valans subband enerjileri ve dalga fonksiyonlari dorduncu derece Runge-Kutta metodu kullanilarak hesaplandi. Uclu GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabanci atomun baglanma enerjisi icin varyasyonel metot kullanilmistir. Baglanma enerjisi hesaplari tel kalinliginin, elektrik alanin ve yabanci atomun konumunun fonksiyonu olarak incelenmistir. Uclu GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabanci atomun baglanma enerjisi icin numerik sonuclar keskin bir artma veya azalma gosterir ki bu uygun sartlar mevcut oldugunda devre elemanlari uygulamalarinda onemli olabilir.
Superlattices and Microstructures, 2019
Abstract Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theore... more Abstract Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theoretically suggested diodes are classified according to their local potentials differed by the doping concentrations. The electronic properties of the diodes are explored in the framework of numerical calculations. In addition, the laser field effects on the latter properties are reported. They show that the laser field application enriches the functionality of these devices in applications.
Physica E: Low-dimensional Systems and Nanostructures, 2009
Superlattices and Microstructures, 2015
ABSTRACT The potential profiles of symmetric and asymmetric rectangular double-barrier structures... more ABSTRACT The potential profiles of symmetric and asymmetric rectangular double-barrier structures made of (Ga, Al)As/ GaAs and the transmission coefficient of an electron in these systems have been investigated under intense laser field. The results show that the field alters the potential profile, and the transmission coefficient can thus be controlled. The transmission at the first resonance energy for the symmetric structure is higher than that of the asymmetric structure. Therefore, the symmetric design is feasible. The properties exhibited in this work may establish guidance to device applications.
Applied Surface Science, 2016
Abstract We have calculated the energy levels and the radial probability distributions of an elec... more Abstract We have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/AlxGa1-xAs/AlAs. The numerical method used is the fourth-order Runge–Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of AlxGa1-xAs spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/AlxGa1-xAs/AlAs quantum dot.
Physics Letters A, 2012
ABSTRACT We study the potential profiles of double quantum wells with different geometries. The b... more ABSTRACT We study the potential profiles of double quantum wells with different geometries. The binding energy of an impurity under a laser field and its simultaneous application with a magnetic field is calculated by means of variational techniques. It is shown that the total potential of the structure suggests a strong control mechanism on the binding energy.
Superlattices and Microstructures, 2001
Physica E: Low-dimensional Systems and Nanostructures, 2005
Applied Surface Science, 2010
Applied Surface Science, 2009
Superlattices and Microstructures, 2008
In this work, we directly calculate the ground state energies for an electron in quantum well wir... more In this work, we directly calculate the ground state energies for an electron in quantum well wires (QWWs) with different shapes in the presence of applied electric and magnetic fields using the finite difference method. Then, we study the ground state binding energy of a hydrogenic impurity with a variational approach. We obtain the binding energy for QWWs consisting of
Tel sisteminin ekseni boyunca dik uygulanan bir dis elektrik alan etkisine maruz kalan uclu GaAs/... more Tel sisteminin ekseni boyunca dik uygulanan bir dis elektrik alan etkisine maruz kalan uclu GaAs/AlxGa1-xAs kuantum kuyu tel sisteminde, hidrojenik yabanci atomun taban durum baglanma enerjisi calisildi. Elektrik alan etkisinde, valans subband enerjileri ve dalga fonksiyonlari dorduncu derece Runge-Kutta metodu kullanilarak hesaplandi. Uclu GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabanci atomun baglanma enerjisi icin varyasyonel metot kullanilmistir. Baglanma enerjisi hesaplari tel kalinliginin, elektrik alanin ve yabanci atomun konumunun fonksiyonu olarak incelenmistir. Uclu GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabanci atomun baglanma enerjisi icin numerik sonuclar keskin bir artma veya azalma gosterir ki bu uygun sartlar mevcut oldugunda devre elemanlari uygulamalarinda onemli olabilir.
Superlattices and Microstructures, 2019
Abstract Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theore... more Abstract Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theoretically suggested diodes are classified according to their local potentials differed by the doping concentrations. The electronic properties of the diodes are explored in the framework of numerical calculations. In addition, the laser field effects on the latter properties are reported. They show that the laser field application enriches the functionality of these devices in applications.
Physica E: Low-dimensional Systems and Nanostructures, 2009
Superlattices and Microstructures, 2015
ABSTRACT The potential profiles of symmetric and asymmetric rectangular double-barrier structures... more ABSTRACT The potential profiles of symmetric and asymmetric rectangular double-barrier structures made of (Ga, Al)As/ GaAs and the transmission coefficient of an electron in these systems have been investigated under intense laser field. The results show that the field alters the potential profile, and the transmission coefficient can thus be controlled. The transmission at the first resonance energy for the symmetric structure is higher than that of the asymmetric structure. Therefore, the symmetric design is feasible. The properties exhibited in this work may establish guidance to device applications.
Applied Surface Science, 2016
Abstract We have calculated the energy levels and the radial probability distributions of an elec... more Abstract We have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/AlxGa1-xAs/AlAs. The numerical method used is the fourth-order Runge–Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of AlxGa1-xAs spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/AlxGa1-xAs/AlAs quantum dot.
Physics Letters A, 2012
ABSTRACT We study the potential profiles of double quantum wells with different geometries. The b... more ABSTRACT We study the potential profiles of double quantum wells with different geometries. The binding energy of an impurity under a laser field and its simultaneous application with a magnetic field is calculated by means of variational techniques. It is shown that the total potential of the structure suggests a strong control mechanism on the binding energy.
Superlattices and Microstructures, 2001
Physica E: Low-dimensional Systems and Nanostructures, 2005
Applied Surface Science, 2010
Applied Surface Science, 2009
Superlattices and Microstructures, 2008
In this work, we directly calculate the ground state energies for an electron in quantum well wir... more In this work, we directly calculate the ground state energies for an electron in quantum well wires (QWWs) with different shapes in the presence of applied electric and magnetic fields using the finite difference method. Then, we study the ground state binding energy of a hydrogenic impurity with a variational approach. We obtain the binding energy for QWWs consisting of