Van Pham | Ghent University (original) (raw)
Address: Dung, Thanh Hoa, Vietnam
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Papers by Van Pham
Insect Biochemistry and Molecular Biology, 2007
Insect Biochemistry and Molecular Biology, 2003
Cell, 2004
Insect galectins are associated with embryonic development or immunity against pathogens. Here, w... more Insect galectins are associated with embryonic development or immunity against pathogens. Here, we show that they can be exploited by parasites for survival in their insect hosts. PpGalec, a tandem repeat galectin expressed in the midgut of the sand fly Phlebotomus papatasi, is used by Leishmania major as a receptor for mediating specific binding to the insect midgut, an event crucial for parasite survival, and accounts for species-specific vector competence. PpGalec is thus identified as a key molecule controlling vector competence for the most widely distributed form of cutaneous leishmaniasis in the Old World. In addition, these studies demonstrate the feasibility of using midgut receptors for parasite ligands as target antigens for transmission-blocking vaccines.
Journal of Experimental Biology, 2004
Insect Biochemistry and Molecular Biology, 2005
Insect Biochemistry and Molecular Biology, 2004
Insect Biochemistry and Molecular Biology, 2008
We have compared the electromigration performance of Cu electromigration structures with varying ... more We have compared the electromigration performance of Cu electromigration structures with varying line lengths imbedded in two different ILD materials. In the regime of high jL where there is no significant back-stress, we observed that three of the key electromigration parameters (i.e., MTF, n, and σ) are constant and approximately equivalent between the two materials. In the regime of lower jL where there is significant back-stress, both materials exhibit similar trends, however, the Cu with low-k material performed relatively worse in terms of MTF and similarly in terms of n and σ. That is, while the MTF of Cu with both materials increased with decreasing jL, the MTF of Cu with low-k material was less than that of the Cu with SiO2-based material due to lower back-stress at a given jL. Further, while a regime of complete immortality was observed for the SiO2-based material, no regime of immortality was observed for the low-k material. The values of n and σ were comparable for both materials, and were constant in the absence of significant back-stress but increased in the presence of significant back-stress. Due to the higher MTFs in the regime of high backstress, MTF is more sensitive to j and L, thereby increasing n as per Black's Law. The increase in σ is a consequence of heightened sensitivity to process variations such as via barrier integrity and CD variation.
Insect Biochemistry and Molecular Biology, 2007
Insect Biochemistry and Molecular Biology, 2003
Cell, 2004
Insect galectins are associated with embryonic development or immunity against pathogens. Here, w... more Insect galectins are associated with embryonic development or immunity against pathogens. Here, we show that they can be exploited by parasites for survival in their insect hosts. PpGalec, a tandem repeat galectin expressed in the midgut of the sand fly Phlebotomus papatasi, is used by Leishmania major as a receptor for mediating specific binding to the insect midgut, an event crucial for parasite survival, and accounts for species-specific vector competence. PpGalec is thus identified as a key molecule controlling vector competence for the most widely distributed form of cutaneous leishmaniasis in the Old World. In addition, these studies demonstrate the feasibility of using midgut receptors for parasite ligands as target antigens for transmission-blocking vaccines.
Journal of Experimental Biology, 2004
Insect Biochemistry and Molecular Biology, 2005
Insect Biochemistry and Molecular Biology, 2004
Insect Biochemistry and Molecular Biology, 2008
We have compared the electromigration performance of Cu electromigration structures with varying ... more We have compared the electromigration performance of Cu electromigration structures with varying line lengths imbedded in two different ILD materials. In the regime of high jL where there is no significant back-stress, we observed that three of the key electromigration parameters (i.e., MTF, n, and σ) are constant and approximately equivalent between the two materials. In the regime of lower jL where there is significant back-stress, both materials exhibit similar trends, however, the Cu with low-k material performed relatively worse in terms of MTF and similarly in terms of n and σ. That is, while the MTF of Cu with both materials increased with decreasing jL, the MTF of Cu with low-k material was less than that of the Cu with SiO2-based material due to lower back-stress at a given jL. Further, while a regime of complete immortality was observed for the SiO2-based material, no regime of immortality was observed for the low-k material. The values of n and σ were comparable for both materials, and were constant in the absence of significant back-stress but increased in the presence of significant back-stress. Due to the higher MTFs in the regime of high backstress, MTF is more sensitive to j and L, thereby increasing n as per Black's Law. The increase in σ is a consequence of heightened sensitivity to process variations such as via barrier integrity and CD variation.