Infrared Absorption and Electron Effective Mass in n-Type Gallium Arsenide (original) (raw)
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Abstract
The infrared absorption between 0.85 and 25 microns has been measured as a function of carrier concentration for n-type single-crystal gallium arsenide. The absorption in the 1- to 5-micron region is compatible with a model in which there are minima ~0.25 ev above the bottom of the conduction band. Infrared reflectivity measurements on several samples of different carrier concentrations were used to deduce the free-carrier contribution to the electric susceptibility and the electron effective mass. The results indicate a value for the mass of (0.078+/-0.004)m with an indication of an increase for the sample of highest carrier concentration. This value is substantially larger than previously reported values.
Publication:
Physical Review
Pub Date:
April 1959
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