A new punchthrough current model based on the voltage-doping transformation (original) (raw)

ADS

;

• Merckel, G. ;
• Pedron, T.

Abstract

The punchthrough phenomenon is investigated by a 2-D numerical analysis. A physical interpretation that relates this phenomenon to the drain-field-induced reduction in doping concentration is proposed. This interpretation allows a better understanding of the mechanism of surface and bulk punchthrough flows and provides a guideline for the quantitative solution to the problem. The relation between the reduced N* and real N dopings (called the voltage-doping transformation, or VDT) is derived from the two-dimensional Poisson equation. It is shown that as a result of the VDT, it is possible to accurately calculate the actual barrier heights as a function of applied voltages and channel length using the well-known long-channel expressions where N is substituted by N*.

Publication:

IEEE Transactions on Electron Devices

Pub Date:

July 1988

DOI:

10.1109/16.3367

Bibcode:

1988ITED...35.1076S

Keywords:

• Voltage;
• Semiconductor process modeling;
• Analytical models;
• Surface treatment;
• Doping profiles;
• Numerical simulation;
• Poisson equations;
• Leakage current;
• MOSFET circuits;
• Electric variables