An Approach for Nanolithography Using Electron Holography (original) (raw)

NASA/ADS

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Abstract

A technique of electron holography was applied to nanofabrication. Electron interference fringes whose spacing was 108 nm were successfully recorded on polymethylmethacrylate (PMMA) resist using a W< 100> thermal field emission (TFE) gun and an electron biprism both set on a conventional transmission electron microscope (TEM). Furthermore, we have attempted the fabrication of a free-standing multi-biprism by electron beam lithography and dry etching, leading to a new fabrication method of a nanoscale grating with a short exposure.

Publication:

Japanese Journal of Applied Physics

Pub Date:

December 1993

DOI:

10.1143/JJAP.32.5988

Bibcode:

1993JaJAP..32.5988O