Kirill Belashchenko | University of Nebraska Lincoln (original) (raw)
Related Authors
Moscow State Institute for Radio-engineering, Electronics and Automation (Thecnical University)
Uploads
Papers by Kirill Belashchenko
IEEE Transactions on Magnetics, 2007
Defects play an important role in the properties of metal oxides which are currently used as barr... more Defects play an important role in the properties of metal oxides which are currently used as barrier layers in magnetic tunnel junctions (MTJs). We study the effect of O vacancies on the interlayer exchange coupling (IEC) and tunneling magnetoresistance (TMR) in Fe-MgO-Fe tunnel junctions. Measurements of IEC in fully epitaxial Fe-MgO-Fe(001) tunnel junctions show IEC is antiferromagnetic (AFM) for small
Journal of Applied Physics, 2008
First principles electronic structure and transport calculations are used to demonstrate the impa... more First principles electronic structure and transport calculations are used to demonstrate the impact of the electric polarization on electron and spin transport in Fe/BaTiO3/Fe multiferroic tunnel junctions (MFTJs). We find that the polarization of BaTiO3 reduces the tunneling conductance, as compared to a nonpolarized barrier, due to the change in the electronic structure driven by ferroelectric displacements, similar to that
Physical Review B, 2005
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junction... more The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/or small applied bias for the parallel magnetization. This explains
Physical Review Letters, 2005
We perform an ab initio study of spin-polarized tunneling in epitaxial CojSrTiO3jCo magnetic tunn... more We perform an ab initio study of spin-polarized tunneling in epitaxial CojSrTiO3jCo magnetic tunnel junctions with bcc Co(001) electrodes. We predict a large tunneling magnetoresistance in these junctions, originating from a mismatch in the majority- and minority-spin bands both in bulk bcc Co and at the CojSrTiO3 interface. The intricate complex band structure of SrTiO3 enables efficient tunneling of the
Physical Review Letters, 2007
Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant... more Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. We find that spin-flip scattering at the interface is controlled not only by the strength of the spin-orbit coupling, but depends strongly on the intrinsic width of the resonant surface states.
Physical Review Letters, 2007
IEEE Transactions on Magnetics, 2007
Defects play an important role in the properties of metal oxides which are currently used as barr... more Defects play an important role in the properties of metal oxides which are currently used as barrier layers in magnetic tunnel junctions (MTJs). We study the effect of O vacancies on the interlayer exchange coupling (IEC) and tunneling magnetoresistance (TMR) in Fe-MgO-Fe tunnel junctions. Measurements of IEC in fully epitaxial Fe-MgO-Fe(001) tunnel junctions show IEC is antiferromagnetic (AFM) for small
Journal of Applied Physics, 2008
First principles electronic structure and transport calculations are used to demonstrate the impa... more First principles electronic structure and transport calculations are used to demonstrate the impact of the electric polarization on electron and spin transport in Fe/BaTiO3/Fe multiferroic tunnel junctions (MFTJs). We find that the polarization of BaTiO3 reduces the tunneling conductance, as compared to a nonpolarized barrier, due to the change in the electronic structure driven by ferroelectric displacements, similar to that
Physical Review B, 2005
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junction... more The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/or small applied bias for the parallel magnetization. This explains
Physical Review Letters, 2005
We perform an ab initio study of spin-polarized tunneling in epitaxial CojSrTiO3jCo magnetic tunn... more We perform an ab initio study of spin-polarized tunneling in epitaxial CojSrTiO3jCo magnetic tunnel junctions with bcc Co(001) electrodes. We predict a large tunneling magnetoresistance in these junctions, originating from a mismatch in the majority- and minority-spin bands both in bulk bcc Co and at the CojSrTiO3 interface. The intricate complex band structure of SrTiO3 enables efficient tunneling of the
Physical Review Letters, 2007
Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant... more Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. We find that spin-flip scattering at the interface is controlled not only by the strength of the spin-orbit coupling, but depends strongly on the intrinsic width of the resonant surface states.
Physical Review Letters, 2007