Abdulghefar Faiq | Sallahadin Univeristy (original) (raw)
Papers by Abdulghefar Faiq
Two MNOS C-V profiling methods are presented; the conventional C-V profiling, and deep depletion ... more Two MNOS C-V profiling methods are presented; the conventional C-V
profiling, and deep depletion (DD) C-V, the former shows a lack of
information at the onset of inversion mode, while the latter can be achieved
by the application of high speed voltage ramp of sweep rate equals 1MV/s on
the MNOS gate, meanwhile monitoring the current response of the time
varying voltage, the entire DD C-V curve is traced on CRO screen with
suitable DC voltage bias. The results show that doping profile can be
extended 1μm deeper inside the silicon, i.e., ten times of Debye's length,
hence more accurate results can be achieved. Interface states densities have
small effect on final doping profile, and doping reaches approximately a
constant value deep inside the silicon compatible with experimental part.
The Metal-Nitride_Oxide-Semiconductor (MNOS) which has a memory characteristics, make it usable f... more The Metal-Nitride_Oxide-Semiconductor (MNOS) which has a memory characteristics, make it usable for non-volatile EEPROM devices. The memory characteristics of MNOS such as charging/discharging and retention have been studied. The process of tunneling and back tunneling through the oxide will take place at certain value of applied electric field depending on oxide thickness. For oxide thickness above 48 Ao, the probability of tunneling starts at given electric field will be more than that field which causes injection of charge carriers from the metal. This process will lead to charge the samples which opposite to that expected from the tunneling through the SiO2 film, this causes a shift of flat-band voltage VFB toward an opposite direction of the applied voltage. Moreover, for oxide thickness of 160Ao, it has been found that the tunneling of holes through the oxide layer is completely blocked, while electron tunneling through the same oxide layer is not. The nitride conductivity has...
Lattice thermal conductivity for silicon nanowires and quantum well are theoretically investigate... more Lattice thermal conductivity for silicon nanowires and quantum well are theoretically investigated in the temperature range from 2K to 300K. The modified Gallaway method for bulk crystal is used for calculating lattice thermal conductivity. All important phonon relaxation mechanism such as Umklapp scattering, Mass-difference scattering and boundary scattering are calculated at 300K. The result show that the modification of the acoustic phonon modes and phonon group velocities due to spatial confinement of phonons lead to significant increase in the all phonon relaxation rate. From our numerical results, we predicate a significant decrease of the lattice thermal conductivity in cylindrical nanowires with diameter (D=10-nm), and quantum well with thickness of the same size, results compared to that of the reported experimental as well as theoretical values.
An electronic system based on a photo gate and an electronic switching circuit is designed for st... more An electronic system based on a photo gate and an electronic switching circuit is designed for studying simple pendulum at large angles. The detailed of the system operation is studied, the pulse measurements performed on a CRO screen for five displacement amplitude angles of 5, 10, 15, 20, and 25 degrees, and the technical problems associated with the measurement process is treated. Results show that calculated acceleration of gravity with acceptable magnitudes can be obtained for small displacement angle of 5 o compared with the real value of the local acceleration of gravity; the relative error is 0.01617 %. Instantaneous time period, amplitude decay, and maximum velocities are measured and used for error handling in the calculation of the acceleration of gravity. In order to overcome the problem of the operating time of the relays which are used in the electronic circuit switch, taking 80 periods for manual measurements have been proved to be useful in decreasing errors in the calculation of acceleration of gravity.
Two MNOS C-V profiling methods are presented; the conventional C-V profiling, and deep depletion ... more Two MNOS C-V profiling methods are presented; the conventional C-V
profiling, and deep depletion (DD) C-V, the former shows a lack of
information at the onset of inversion mode, while the latter can be achieved
by the application of high speed voltage ramp of sweep rate equals 1MV/s on
the MNOS gate, meanwhile monitoring the current response of the time
varying voltage, the entire DD C-V curve is traced on CRO screen with
suitable DC voltage bias. The results show that doping profile can be
extended 1μm deeper inside the silicon, i.e., ten times of Debye's length,
hence more accurate results can be achieved. Interface states densities have
small effect on final doping profile, and doping reaches approximately a
constant value deep inside the silicon compatible with experimental part.
The Metal-Nitride_Oxide-Semiconductor (MNOS) which has a memory characteristics, make it usable f... more The Metal-Nitride_Oxide-Semiconductor (MNOS) which has a memory characteristics, make it usable for non-volatile EEPROM devices. The memory characteristics of MNOS such as charging/discharging and retention have been studied. The process of tunneling and back tunneling through the oxide will take place at certain value of applied electric field depending on oxide thickness. For oxide thickness above 48 Ao, the probability of tunneling starts at given electric field will be more than that field which causes injection of charge carriers from the metal. This process will lead to charge the samples which opposite to that expected from the tunneling through the SiO2 film, this causes a shift of flat-band voltage VFB toward an opposite direction of the applied voltage. Moreover, for oxide thickness of 160Ao, it has been found that the tunneling of holes through the oxide layer is completely blocked, while electron tunneling through the same oxide layer is not. The nitride conductivity has...
Lattice thermal conductivity for silicon nanowires and quantum well are theoretically investigate... more Lattice thermal conductivity for silicon nanowires and quantum well are theoretically investigated in the temperature range from 2K to 300K. The modified Gallaway method for bulk crystal is used for calculating lattice thermal conductivity. All important phonon relaxation mechanism such as Umklapp scattering, Mass-difference scattering and boundary scattering are calculated at 300K. The result show that the modification of the acoustic phonon modes and phonon group velocities due to spatial confinement of phonons lead to significant increase in the all phonon relaxation rate. From our numerical results, we predicate a significant decrease of the lattice thermal conductivity in cylindrical nanowires with diameter (D=10-nm), and quantum well with thickness of the same size, results compared to that of the reported experimental as well as theoretical values.
An electronic system based on a photo gate and an electronic switching circuit is designed for st... more An electronic system based on a photo gate and an electronic switching circuit is designed for studying simple pendulum at large angles. The detailed of the system operation is studied, the pulse measurements performed on a CRO screen for five displacement amplitude angles of 5, 10, 15, 20, and 25 degrees, and the technical problems associated with the measurement process is treated. Results show that calculated acceleration of gravity with acceptable magnitudes can be obtained for small displacement angle of 5 o compared with the real value of the local acceleration of gravity; the relative error is 0.01617 %. Instantaneous time period, amplitude decay, and maximum velocities are measured and used for error handling in the calculation of the acceleration of gravity. In order to overcome the problem of the operating time of the relays which are used in the electronic circuit switch, taking 80 periods for manual measurements have been proved to be useful in decreasing errors in the calculation of acceleration of gravity.