Ramzan Mat Ayub | Universiti Malaysia Perlis (UniMAP) (original) (raw)

Papers by Ramzan Mat Ayub

2016 3rd International Conference on Electronic Design (ICED), 2016

In this paper, the device performance in ultrascaled junctionless (JLT) over junction transistor ... more In this paper, the device performance in ultrascaled junctionless (JLT) over junction transistor (JT) are investigated using numerical TCAD Atlas 3D simulator software on 10 nm gate length. The main parameters of interest are analogue and radio frequency figure-of-merits. Result shows no significant advantage of JLT for analog and RF applications as compared to normal junction MOSFETs transistor. Slightly higher gate-to-gate capacitance in JLT architectures related to high doping in the channel, which is not beneficial for RF applications.

Advanced Materials Research, 2015

The aim of this paper is to review several high-κ materials pertaining to their suitability as bi... more The aim of this paper is to review several high-κ materials pertaining to their suitability as biocompatible layer in biosensor applications. The recent challenges and issues related to the process development of the stated applications were discussed. The materials were chosen based on the ideal biosensor characteristics such as biocompatibility of the material, the limit of detection, the sensitivity of the biosensor, etc. Based on our studies, TiO2 thin-film has emerged as the most promising high-κ material for biosensor applications because of its excellent biocompatibility. The additional merits were its chemical stability and non-toxicity that makes the TiO2 film the most sought after high-κ materials in biosensor application recently.

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014

To develop the SAW device, piezoelectric substrate is one of important factor that improve perfor... more To develop the SAW device, piezoelectric substrate is one of important factor that improve performance device. The material used such as ITO (Indium Thin Oxide) or LiTaO3 (Lithium Tantalate) extremely affect the cost as well as the preparation methods. To overcome this problem, the material known as ZnO (Zinc Oxide) has been chosen as the thin film layer of piezoelectric in developing the biosensor. These ZnO thin film acts as piezoelectric layer that made contact with the sensing element before the signal convert from a biological signal to an electrical signal by the transducer. Solgel deposition technique was used and zinc acetate as precursor compound and 2-Methoxyethanol as solvent to form the sol-gel. This sol-gel then be spin coat on the SiO2/Si substrate which will later to be anneal with oxygen to make the thin film more dense, thinner and has smoother surface quality and higher resistivity. The surface morphology, electrical and optical characterization of the thin films will be studied using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM), Four Point Probe and UV-Visible Spectropohotometer.

2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016

The paper reports on numerical simulation of underlap field effect transistor (FET) device archit... more The paper reports on numerical simulation of underlap field effect transistor (FET) device architecture on silicon-on-insulator (SOI) for a robustness used in biosensors application. By using the Silvaco ATLAS device simulator, the simulation is aimed at elucidating the effect of length of underlap, location of underlap, device etching profiles, and effect of back-gate biasing on the magnitude of drain current (ID). It is shown that the longer underlap and an etched silicon profile introduced higher parasitic resistance, thus decreasing the ID response. The ID response is higher for device with underlap between the gate-drain terminals as compared to gate-source terminals. Positive back-gate bias increases and shifts the current, and reduced the threshold voltage required to turn on the device.

Applied Physics A, 2016

Cu 2 CdSnS 4 quaternary alloy nanostructures with different copper concentrations (0.2, 0.4, 0.6,... more Cu 2 CdSnS 4 quaternary alloy nanostructures with different copper concentrations (0.2, 0.4, 0.6, 0.8 and 1.0 M) were successfully synthesized on n-type silicon substrates using spin coating technique with annealing temperature at 300°C. Optical properties were analyzed through UV-Vis and Photoluminescence spectroscopies, and thus, there is a change in energy band gap with increasing Cu concentration from 0.2 to 1.0 M. The structural properties of Cu 2 CdSnS 4 quaternary alloy nanostructures were investigated by X-ray diffraction. The particles size and shape have a direct relationship with copper concentration. Morphological and topographical studies were carried out by using scanning electron microscopy and atomic force microscopy. The obtained results are investigated to be available in the literature for future studies.

Journal of Alloys and Compounds, 2016

Abstract Cu 2 CdSnS 4 quaternary alloy nanostructures are useful for photovoltaic applications we... more Abstract Cu 2 CdSnS 4 quaternary alloy nanostructures are useful for photovoltaic applications were successfully synthesized on p-type silicon substrate using the spin coating technique at different annealing temperatures up to 500 °C. The optical properties were investigated through UV–vis and photoluminescence (PL) spectrofluorometers, these nanostructures have a direct energy band gap of 1.29–1.31 eV. The refractive index and optical dielectric constant are investigated. The structural properties were explored by using X-ray diffraction (XRD). Morphological and topographical studies were carried out by scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The particle size and shape have a proportional relationship with annealing temperature under ultrasonic effect. The obtained results are in accordance with available theoretical and experimental data.

Applied Physics A, 2012

Due to a processing error, the presentation of Fig. 7 was incorrect. The corrected figure is give... more Due to a processing error, the presentation of Fig. 7 was incorrect. The corrected figure is given below. Unfortunately, some errors occurred in Sect. 4 "Conclusion". The corrected Sect. 4 "Conclusion" is given below: The online version of the original article can be found under

Electrical based biosensor transforms medical application systems into one of the most advance te... more Electrical based biosensor transforms medical application systems into one of the most advance technologies in terms of disease detection with the advantages of fast responsive time and low cost production. Interdigitated electrode (IDE) device was implemented to approach surface functionalization process to allow antigen-antibody reaction of cardiac troponin I protein that modulate electrical conductivity based on the concentration of anti-antibody troponin I. Titanium Dioxide (TiO 2 ) thin film was deposited on the IDE surfaces using sol-gel method acting as a sensing area for the biosensor. Not only provide high surface to volume ratio and chemical-environment-dependent electrical properties, TiO 2 promotes natural oxygen group bonding that is crucial for biomolecule linkage. Electrical and structural properties of IDE starting from bare devices until hybridization processes were studied by using Semiconductor Parameter Analyser (SPA), Atomic Force Microscope (AFM) and Scanning E...

Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2016

Semiconductor Physics, Quantum Electronics and Optoelectronics, 2004

The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devi... more The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. It is essential that the program high and program low speed of the EEPROM cell is within 1ms with a programming voltage of not more than 16V. In this study, two experiments were setup to improve the programming speed. The first experiment was to increase the high voltage NMOS drain junction breakdown voltage with the source floating (HVNMOS BVDSF), and the second experiment was to scale down the ONO layer. The characterization work to increase the programming speed of the memory cell of 16k FLOTOX EEPROM has been carried out. P-field implant dose is optimized to have both the HVNMOS BVDSF and the p-field threshold voltage above 16V for fast programming. As a result, the threshold voltages of programming high and low operation are achieved at 4.35V and 0.77V respectively. Furthermore, by scaling down the nitride layer of ONO from 160Å to 130Å, the V t program window is further improved to 4.5V and 0.94V for the program high and program low operations respectively.

AIP Conference Proceedings, 2018

AIP Conference Proceedings, 2018

ARTICLES YOU MAY BE INTERESTED IN Analysis of conserved and non-served regions in neuraminidase o... more ARTICLES YOU MAY BE INTERESTED IN Analysis of conserved and non-served regions in neuraminidase of influenza virus for probe designing

Simple and inexpensive mask layout design on a transparency film were demonstrated using the conv... more Simple and inexpensive mask layout design on a transparency film were demonstrated using the conventional complementary metal oxide semiconductor (CMOS) technique to produce interdigitated electrodes (IDEs) for biomedical biosensors applications. Lift-off techniques were implemented during photolithography process in order to pattern an electrode widths of 200µm, 300µm, 400µm and 500µm, respectively with a standardized 400µm gap spacing spiral IDEs. Due to the effect of the transparent mask, a fabrication of these spiral IDEs resulted in shrinkage of electrode width and increment of the gap spacing. Among these electrode sizes, the conductance of 300µm, 400µm and 500µm electrode width were successfully examined as compared to 200µm.

2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016

interdigitated electrodes (IDEs) with GO-MWCNTs thin film as sensing membrane have been successfu... more interdigitated electrodes (IDEs) with GO-MWCNTs thin film as sensing membrane have been successfully developed on silicon substrate for DNA detection. The physical surface morphology of GO-MWCNTs were characterized using field emission scanning electron microscopy (FESEM) and the surface structural was determined by X-ray powder diffraction (XRD). The chemical bonding of GO-MWCNTs were examined by using Fourier transform infrared spectroscopy (FTIR). FTIR spectrum successfully shows that the GO-MWCNT hybrid thin film contained carboxyl functional groups by showing peaks at 3375cm -1 and 1690cm -1 for (O-H stretch), and (C=O stretch) respectively. The IDE biosensor was measured on DNA immobilization activities. The current of the IDE after the immobilization at 2V was drop from 0.9mA to 0.75mA. The difference of the current signal is due to the negatively charged backbones of the DNA probes repelled electrons from accumulating at the conducting channel. The IDE current was further decreased when the DNA hybridization took place.

MATEC Web of Conferences, 2016

The reverse recovery lifetime of a diode is one the key parameter in power electronics market. To... more The reverse recovery lifetime of a diode is one the key parameter in power electronics market. To make a diode with fast switching speed, diodes are often doped with impurities such as gold and platinum to improve its lifetime. In this works, we present the reverse recovery lifetime improvement of a power rectifier diode through platinum diffusion in the intrinsic region in between P-N junction using Design of Experiment (DOE) approach. A commercial available power rectifier is used in this study. We factored in the temperature and thermal diffusion time during the platinum diffusion process in our DOE. From results, DOE 2 (with shorter thermal duration and high temperature for diffusion) is selected based on meeting requirement for forward voltage and reverse recovery specifications i.e. forward voltage at 1.8V and reverse recovery time at 27ns.

This paper presents the preparation method of photolithography chrome mask design used in fabrica... more This paper presents the preparation method of photolithography chrome mask design used in fabrication process of double spiral interdigitated electrode with back gate biasing based biosensor. By learning the fabrication process flow of the biosensor, the chrome masks are designed through drawing using the AutoCAD software. The overall width and length of the device is optimized at 7.0 mm and 10.0 mm, respectively. Fabrication processes of the biosensor required three chrome masks, which included back gate opening, spiral IDE formation, and passivation area formation. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

AIP Conference Proceedings, 2016

In this work, we investigate the optimum etching of titanium dioxide (TiO2) using inductive coupl... more In this work, we investigate the optimum etching of titanium dioxide (TiO2) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF4/O2 gases as plasma etchant with ratio of 3:1, three samples of TiO2 thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF4 gases with plasma enhancement by O2 gas able to break the oxide bond of TiO2 and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

Titanium dioxide (TiO2) nanoparticles based Interdigitated Device Electrodes (IDEs) Nanobiosensor... more Titanium dioxide (TiO2) nanoparticles based Interdigitated Device Electrodes (IDEs) Nanobiosensor device was developed for intracellular biochemical detection. Fabrication and characterization of Scanning Electron Microscopy (SEM) using IDE nanocoated with TiO2 was studied in this paper. SEM analysis was carried out at 10 kV acceleration volatege and a 9.8 mA emission current to compare IDE with and without TiO2 on the surface area. The simple fabrication process, high sensitivity, and fast response of the TiO2 based IDEs facilitate their applications in a wide range of areas. The small size of semiconductor TiO2 based IDE for sensitive, label-free, real time detection of a wide range of biological species could be explored in vivo diagnostics and array-based screening.

AIP Conference Proceedings, 2016

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a basic type of transistor to be us... more Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a basic type of transistor to be used as a switch since 1959. Since then, the successful of MOSFET is due to good properties between silicon and silicon dioxide. The reduction of silicon oxide thickness provide further enhancement in device performance. At 90 and 65 nm technology nodes, the gate oxide could not be scaled anymore due to the direct tunneling effect resulting significant increase of leakage current. At 45 nm the high-k + metal gate has been introduced. Recently, the ferroelectric effect material is introduced which significantly reduce the gate leakage current. This paper review the evolution of gate dielectric scaling from the era of silicon dioxide to high-k + metal gate and ferroelectric effect material.

2016 3rd International Conference on Electronic Design (ICED), 2016

In this paper, the device performance in ultrascaled junctionless (JLT) over junction transistor ... more In this paper, the device performance in ultrascaled junctionless (JLT) over junction transistor (JT) are investigated using numerical TCAD Atlas 3D simulator software on 10 nm gate length. The main parameters of interest are analogue and radio frequency figure-of-merits. Result shows no significant advantage of JLT for analog and RF applications as compared to normal junction MOSFETs transistor. Slightly higher gate-to-gate capacitance in JLT architectures related to high doping in the channel, which is not beneficial for RF applications.

Advanced Materials Research, 2015

The aim of this paper is to review several high-κ materials pertaining to their suitability as bi... more The aim of this paper is to review several high-κ materials pertaining to their suitability as biocompatible layer in biosensor applications. The recent challenges and issues related to the process development of the stated applications were discussed. The materials were chosen based on the ideal biosensor characteristics such as biocompatibility of the material, the limit of detection, the sensitivity of the biosensor, etc. Based on our studies, TiO2 thin-film has emerged as the most promising high-κ material for biosensor applications because of its excellent biocompatibility. The additional merits were its chemical stability and non-toxicity that makes the TiO2 film the most sought after high-κ materials in biosensor application recently.

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014

To develop the SAW device, piezoelectric substrate is one of important factor that improve perfor... more To develop the SAW device, piezoelectric substrate is one of important factor that improve performance device. The material used such as ITO (Indium Thin Oxide) or LiTaO3 (Lithium Tantalate) extremely affect the cost as well as the preparation methods. To overcome this problem, the material known as ZnO (Zinc Oxide) has been chosen as the thin film layer of piezoelectric in developing the biosensor. These ZnO thin film acts as piezoelectric layer that made contact with the sensing element before the signal convert from a biological signal to an electrical signal by the transducer. Solgel deposition technique was used and zinc acetate as precursor compound and 2-Methoxyethanol as solvent to form the sol-gel. This sol-gel then be spin coat on the SiO2/Si substrate which will later to be anneal with oxygen to make the thin film more dense, thinner and has smoother surface quality and higher resistivity. The surface morphology, electrical and optical characterization of the thin films will be studied using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM), Four Point Probe and UV-Visible Spectropohotometer.

2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016

The paper reports on numerical simulation of underlap field effect transistor (FET) device archit... more The paper reports on numerical simulation of underlap field effect transistor (FET) device architecture on silicon-on-insulator (SOI) for a robustness used in biosensors application. By using the Silvaco ATLAS device simulator, the simulation is aimed at elucidating the effect of length of underlap, location of underlap, device etching profiles, and effect of back-gate biasing on the magnitude of drain current (ID). It is shown that the longer underlap and an etched silicon profile introduced higher parasitic resistance, thus decreasing the ID response. The ID response is higher for device with underlap between the gate-drain terminals as compared to gate-source terminals. Positive back-gate bias increases and shifts the current, and reduced the threshold voltage required to turn on the device.

Applied Physics A, 2016

Cu 2 CdSnS 4 quaternary alloy nanostructures with different copper concentrations (0.2, 0.4, 0.6,... more Cu 2 CdSnS 4 quaternary alloy nanostructures with different copper concentrations (0.2, 0.4, 0.6, 0.8 and 1.0 M) were successfully synthesized on n-type silicon substrates using spin coating technique with annealing temperature at 300°C. Optical properties were analyzed through UV-Vis and Photoluminescence spectroscopies, and thus, there is a change in energy band gap with increasing Cu concentration from 0.2 to 1.0 M. The structural properties of Cu 2 CdSnS 4 quaternary alloy nanostructures were investigated by X-ray diffraction. The particles size and shape have a direct relationship with copper concentration. Morphological and topographical studies were carried out by using scanning electron microscopy and atomic force microscopy. The obtained results are investigated to be available in the literature for future studies.

Journal of Alloys and Compounds, 2016

Abstract Cu 2 CdSnS 4 quaternary alloy nanostructures are useful for photovoltaic applications we... more Abstract Cu 2 CdSnS 4 quaternary alloy nanostructures are useful for photovoltaic applications were successfully synthesized on p-type silicon substrate using the spin coating technique at different annealing temperatures up to 500 °C. The optical properties were investigated through UV–vis and photoluminescence (PL) spectrofluorometers, these nanostructures have a direct energy band gap of 1.29–1.31 eV. The refractive index and optical dielectric constant are investigated. The structural properties were explored by using X-ray diffraction (XRD). Morphological and topographical studies were carried out by scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The particle size and shape have a proportional relationship with annealing temperature under ultrasonic effect. The obtained results are in accordance with available theoretical and experimental data.

Applied Physics A, 2012

Due to a processing error, the presentation of Fig. 7 was incorrect. The corrected figure is give... more Due to a processing error, the presentation of Fig. 7 was incorrect. The corrected figure is given below. Unfortunately, some errors occurred in Sect. 4 "Conclusion". The corrected Sect. 4 "Conclusion" is given below: The online version of the original article can be found under

Electrical based biosensor transforms medical application systems into one of the most advance te... more Electrical based biosensor transforms medical application systems into one of the most advance technologies in terms of disease detection with the advantages of fast responsive time and low cost production. Interdigitated electrode (IDE) device was implemented to approach surface functionalization process to allow antigen-antibody reaction of cardiac troponin I protein that modulate electrical conductivity based on the concentration of anti-antibody troponin I. Titanium Dioxide (TiO 2 ) thin film was deposited on the IDE surfaces using sol-gel method acting as a sensing area for the biosensor. Not only provide high surface to volume ratio and chemical-environment-dependent electrical properties, TiO 2 promotes natural oxygen group bonding that is crucial for biomolecule linkage. Electrical and structural properties of IDE starting from bare devices until hybridization processes were studied by using Semiconductor Parameter Analyser (SPA), Atomic Force Microscope (AFM) and Scanning E...

Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2016

Semiconductor Physics, Quantum Electronics and Optoelectronics, 2004

The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devi... more The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. It is essential that the program high and program low speed of the EEPROM cell is within 1ms with a programming voltage of not more than 16V. In this study, two experiments were setup to improve the programming speed. The first experiment was to increase the high voltage NMOS drain junction breakdown voltage with the source floating (HVNMOS BVDSF), and the second experiment was to scale down the ONO layer. The characterization work to increase the programming speed of the memory cell of 16k FLOTOX EEPROM has been carried out. P-field implant dose is optimized to have both the HVNMOS BVDSF and the p-field threshold voltage above 16V for fast programming. As a result, the threshold voltages of programming high and low operation are achieved at 4.35V and 0.77V respectively. Furthermore, by scaling down the nitride layer of ONO from 160Å to 130Å, the V t program window is further improved to 4.5V and 0.94V for the program high and program low operations respectively.

AIP Conference Proceedings, 2018

AIP Conference Proceedings, 2018

ARTICLES YOU MAY BE INTERESTED IN Analysis of conserved and non-served regions in neuraminidase o... more ARTICLES YOU MAY BE INTERESTED IN Analysis of conserved and non-served regions in neuraminidase of influenza virus for probe designing

Simple and inexpensive mask layout design on a transparency film were demonstrated using the conv... more Simple and inexpensive mask layout design on a transparency film were demonstrated using the conventional complementary metal oxide semiconductor (CMOS) technique to produce interdigitated electrodes (IDEs) for biomedical biosensors applications. Lift-off techniques were implemented during photolithography process in order to pattern an electrode widths of 200µm, 300µm, 400µm and 500µm, respectively with a standardized 400µm gap spacing spiral IDEs. Due to the effect of the transparent mask, a fabrication of these spiral IDEs resulted in shrinkage of electrode width and increment of the gap spacing. Among these electrode sizes, the conductance of 300µm, 400µm and 500µm electrode width were successfully examined as compared to 200µm.

2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016

interdigitated electrodes (IDEs) with GO-MWCNTs thin film as sensing membrane have been successfu... more interdigitated electrodes (IDEs) with GO-MWCNTs thin film as sensing membrane have been successfully developed on silicon substrate for DNA detection. The physical surface morphology of GO-MWCNTs were characterized using field emission scanning electron microscopy (FESEM) and the surface structural was determined by X-ray powder diffraction (XRD). The chemical bonding of GO-MWCNTs were examined by using Fourier transform infrared spectroscopy (FTIR). FTIR spectrum successfully shows that the GO-MWCNT hybrid thin film contained carboxyl functional groups by showing peaks at 3375cm -1 and 1690cm -1 for (O-H stretch), and (C=O stretch) respectively. The IDE biosensor was measured on DNA immobilization activities. The current of the IDE after the immobilization at 2V was drop from 0.9mA to 0.75mA. The difference of the current signal is due to the negatively charged backbones of the DNA probes repelled electrons from accumulating at the conducting channel. The IDE current was further decreased when the DNA hybridization took place.

MATEC Web of Conferences, 2016

The reverse recovery lifetime of a diode is one the key parameter in power electronics market. To... more The reverse recovery lifetime of a diode is one the key parameter in power electronics market. To make a diode with fast switching speed, diodes are often doped with impurities such as gold and platinum to improve its lifetime. In this works, we present the reverse recovery lifetime improvement of a power rectifier diode through platinum diffusion in the intrinsic region in between P-N junction using Design of Experiment (DOE) approach. A commercial available power rectifier is used in this study. We factored in the temperature and thermal diffusion time during the platinum diffusion process in our DOE. From results, DOE 2 (with shorter thermal duration and high temperature for diffusion) is selected based on meeting requirement for forward voltage and reverse recovery specifications i.e. forward voltage at 1.8V and reverse recovery time at 27ns.

This paper presents the preparation method of photolithography chrome mask design used in fabrica... more This paper presents the preparation method of photolithography chrome mask design used in fabrication process of double spiral interdigitated electrode with back gate biasing based biosensor. By learning the fabrication process flow of the biosensor, the chrome masks are designed through drawing using the AutoCAD software. The overall width and length of the device is optimized at 7.0 mm and 10.0 mm, respectively. Fabrication processes of the biosensor required three chrome masks, which included back gate opening, spiral IDE formation, and passivation area formation. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

AIP Conference Proceedings, 2016

In this work, we investigate the optimum etching of titanium dioxide (TiO2) using inductive coupl... more In this work, we investigate the optimum etching of titanium dioxide (TiO2) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF4/O2 gases as plasma etchant with ratio of 3:1, three samples of TiO2 thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF4 gases with plasma enhancement by O2 gas able to break the oxide bond of TiO2 and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

Titanium dioxide (TiO2) nanoparticles based Interdigitated Device Electrodes (IDEs) Nanobiosensor... more Titanium dioxide (TiO2) nanoparticles based Interdigitated Device Electrodes (IDEs) Nanobiosensor device was developed for intracellular biochemical detection. Fabrication and characterization of Scanning Electron Microscopy (SEM) using IDE nanocoated with TiO2 was studied in this paper. SEM analysis was carried out at 10 kV acceleration volatege and a 9.8 mA emission current to compare IDE with and without TiO2 on the surface area. The simple fabrication process, high sensitivity, and fast response of the TiO2 based IDEs facilitate their applications in a wide range of areas. The small size of semiconductor TiO2 based IDE for sensitive, label-free, real time detection of a wide range of biological species could be explored in vivo diagnostics and array-based screening.

AIP Conference Proceedings, 2016

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a basic type of transistor to be us... more Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a basic type of transistor to be used as a switch since 1959. Since then, the successful of MOSFET is due to good properties between silicon and silicon dioxide. The reduction of silicon oxide thickness provide further enhancement in device performance. At 90 and 65 nm technology nodes, the gate oxide could not be scaled anymore due to the direct tunneling effect resulting significant increase of leakage current. At 45 nm the high-k + metal gate has been introduced. Recently, the ferroelectric effect material is introduced which significantly reduce the gate leakage current. This paper review the evolution of gate dielectric scaling from the era of silicon dioxide to high-k + metal gate and ferroelectric effect material.