Jean-michel Gérard | Université Grenoble Alpes (original) (raw)
Papers by Jean-michel Gérard
HAL (Le Centre pour la Communication Scientifique Directe), 2006
International audienc
HAL (Le Centre pour la Communication Scientifique Directe), 2005
... Details der Publikation. Download, http://hal.ccsd.cnrs.fr/ccsd-00011213/en/. Herausgeber, HA... more ... Details der Publikation. Download, http://hal.ccsd.cnrs.fr/ccsd-00011213/en/. Herausgeber, HAL - CCSd - CNRS. Mitarbeiter, Philippe Roussignol. Archiv, CCSd/HAL : e-articles server (based on gBUS) (France). Keywords, Physics/Condensed Matter/Other. Typ, COMMUNICATION ...
Nucleation and Atmospheric Aerosols, 2007
In this work we discuss the optical properties of GaN/AlxGa1-xN (x=0.11, 0.25) multiple-quantum-w... more In this work we discuss the optical properties of GaN/AlxGa1-xN (x=0.11, 0.25) multiple-quantum-well structures grown by plasma-assisted molecular-beam epitaxy. Photoluminescence lines related to the fundamental and excited electronic levels are identified, in good agreement with simulations of the electronic structure. Temperature dependent studies reveal an anomalous behavior of the photoluminescence intensity, which is the quenching of the e1-hh1 line, while
NATO advanced study institutes series, 1989
Two InAs/GaAs multilayers have been studied using X-Ray diffraction (XR), photoluminescence (PL) ... more Two InAs/GaAs multilayers have been studied using X-Ray diffraction (XR), photoluminescence (PL) and high Resolution Transmission Electron Microscopy (HRTEM) in order to determine the Indium location. X-Ray diffraction has provided the thickness and periodicity of the multilayers. The ones chosen were respectively A : 0.9 monolayer (mL) and B : 1.7 mL thick according to XR measurements. From comparison of their structure we conclude that Indium intermixes with Gallium and gives rise to a thicker film, InGaAs, the Indium proportion being at least 50 %. The interface InAs/GaAs is atomically flat, whereas the interface GaAs/InAs is extremely rough. This may be a way of decreasing the elastic energy.
Physical Review Letters, Feb 22, 2021
HAL (Le Centre pour la Communication Scientifique Directe), 2010
International audienc
HAL (Le Centre pour la Communication Scientifique Directe), 2006
International audienc
HAL (Le Centre pour la Communication Scientifique Directe), 2005
HAL (Le Centre pour la Communication Scientifique Directe), 2005
We present the experimental evidence of giant optical anisotropy in single InAs QDs. Polarization... more We present the experimental evidence of giant optical anisotropy in single InAs QDs. Polarization-resolved photoluminescence spectroscopy in single QDs reveals a linear polarization ratio which fluctuates, from one dot to another, in sign and in magnitude with absolute values up to 82%. We do not observe any dependence of the linear polarization on incident power and temperature.
HAL (Le Centre pour la Communication Scientifique Directe), 2004
... Ivan Favero 1 , Guillaume Cassabois 1 , Aleksandar Jankovic 1 , Robson Ferreira 1 , David Dar... more ... Ivan Favero 1 , Guillaume Cassabois 1 , Aleksandar Jankovic 1 , Robson Ferreira 1 , David Darson 1 , Christophe Voisin 1 , Claude Delalande 1 , Philippe Roussignol 1 , Brian Gerardot 3 , Pierre Petroff 3 , Jean-Michel Gérard 2. (2004). ... Contributeur : Philippe Roussignol <>. ...
HAL (Le Centre pour la Communication Scientifique Directe), 2005
... Details der Publikation. Download, http://hal.ccsd.cnrs.fr/ccsd-00011212/en/. Herausgeber, HA... more ... Details der Publikation. Download, http://hal.ccsd.cnrs.fr/ccsd-00011212/en/. Herausgeber, HAL - CCSd - CNRS. Mitarbeiter, Philippe Roussignol. Archiv, CCSd/HAL : e-articles server (based on gBUS) (France). Keywords, Physics/Condensed Matter/Other. Typ, COMMUNICATION ...
HAL (Le Centre pour la Communication Scientifique Directe), 2007
The temperature-induced broadening of the optical spectrum is a major issue of the quantum dot op... more The temperature-induced broadening of the optical spectrum is a major issue of the quantum dot optical properties. Temperature-dependent measurements have shown that the line-shape can be described by the superposition of the so-called zero-phonon line and broad side-bands extending on several meV [1]. These side-bands arise from the radiative recombination of electron-hole pairs assisted by the emission and the absorption of acoustic phonons and are quantitatively interpreted in the framework of the Huang-Rhys theory. However, within this theoretical treatment, the zero-phonon line does not show any broadening with temperature in strong contrast with the literature which shows a wide dispersion of the data on the temperature dependence of this zero-phonon line-width [2-5]. We show here that the thermal activation of the processes leading to spectral diffusion in the motional narrowing regime [6] results in a Lorentzian zero-phonon line with a width that increases linearly with temperature. This extrinsic dephasing process is studied by systematic measurements of the linewidth for single quantum dots in the motional narrowing regime, i.e. with a zero-phonon line that keeps a Lorentzian profile in the investigated range of experimental parameters. This contribution to the temperature dependence of the zero-phonon line-width relies on an interaction between acoustic phonons and carriers outside the QDs in contrast with previous models where acoustic phonons interact with carriers inside the dot. Our original model provides a unified interpretation to the published data on the temperature dependence of the zero-phonon line. [1]L. Besombes, K. Kheng, L. Marsal, and H. Mariette, Phys. Rev. B 65, 121314 (2002). [2]C. Kammerer, C. Voisin, G. Cassabois, C. Delalande, Ph. Roussignol, F. Klopf, J. P. Reithmaier, A. Forchel, and J. M. G\'{e}rard, Phys. Rev. B 66, 041306 (2002). [3]B. Urbaszek, E. J. McGhee, M. Kruger, R. J. Warburton, K. Karrai, T. Amand, B. D. Gerardot, P. M. Petroff, and J. M. Garcia, Phys. Rev. B 69, 035304 (2004). [4]G. Ortner, D. R. Yakovlev, M. Bayer, S. Rudin, T. L. Reinecke, S. Fafard, Z. Wasilewski, and A. Forchel, Phys. Rev. B 70, 201301 (2004). [5]P. Borri, W. Langbein, U. Woggon, V. Stavarache, D. Reuter, and A. D. Wieck, Phys. Rev. B 71, 115328 (2005). [6]A. Berthelot, I. Favero, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, R. Ferreira, and J. M. G\'{e}rard, Nature Phys. 2, 759 (2006).
Physica E-low-dimensional Systems & Nanostructures, Feb 1, 2005
Polarization-resolved photoluminescence (PL) experiments have attracted much attention in recent ... more Polarization-resolved photoluminescence (PL) experiments have attracted much attention in recent years in view of understanding the exciton fine structure in single quantum dots (QDs) [1]. Assuming rotational symmetry of the QD along the growth axis, one predicts two bright ...
AIP Advances, Oct 1, 2014
Superconductor Science and Technology, Jan 9, 2017
Physical Review B, Feb 28, 2007
Nature Photonics, Jan 31, 2010
arXiv (Cornell University), Jul 2, 2010
HAL (Le Centre pour la Communication Scientifique Directe), 2006
International audienc
HAL (Le Centre pour la Communication Scientifique Directe), 2005
... Details der Publikation. Download, http://hal.ccsd.cnrs.fr/ccsd-00011213/en/. Herausgeber, HA... more ... Details der Publikation. Download, http://hal.ccsd.cnrs.fr/ccsd-00011213/en/. Herausgeber, HAL - CCSd - CNRS. Mitarbeiter, Philippe Roussignol. Archiv, CCSd/HAL : e-articles server (based on gBUS) (France). Keywords, Physics/Condensed Matter/Other. Typ, COMMUNICATION ...
Nucleation and Atmospheric Aerosols, 2007
In this work we discuss the optical properties of GaN/AlxGa1-xN (x=0.11, 0.25) multiple-quantum-w... more In this work we discuss the optical properties of GaN/AlxGa1-xN (x=0.11, 0.25) multiple-quantum-well structures grown by plasma-assisted molecular-beam epitaxy. Photoluminescence lines related to the fundamental and excited electronic levels are identified, in good agreement with simulations of the electronic structure. Temperature dependent studies reveal an anomalous behavior of the photoluminescence intensity, which is the quenching of the e1-hh1 line, while
NATO advanced study institutes series, 1989
Two InAs/GaAs multilayers have been studied using X-Ray diffraction (XR), photoluminescence (PL) ... more Two InAs/GaAs multilayers have been studied using X-Ray diffraction (XR), photoluminescence (PL) and high Resolution Transmission Electron Microscopy (HRTEM) in order to determine the Indium location. X-Ray diffraction has provided the thickness and periodicity of the multilayers. The ones chosen were respectively A : 0.9 monolayer (mL) and B : 1.7 mL thick according to XR measurements. From comparison of their structure we conclude that Indium intermixes with Gallium and gives rise to a thicker film, InGaAs, the Indium proportion being at least 50 %. The interface InAs/GaAs is atomically flat, whereas the interface GaAs/InAs is extremely rough. This may be a way of decreasing the elastic energy.
Physical Review Letters, Feb 22, 2021
HAL (Le Centre pour la Communication Scientifique Directe), 2010
International audienc
HAL (Le Centre pour la Communication Scientifique Directe), 2006
International audienc
HAL (Le Centre pour la Communication Scientifique Directe), 2005
HAL (Le Centre pour la Communication Scientifique Directe), 2005
We present the experimental evidence of giant optical anisotropy in single InAs QDs. Polarization... more We present the experimental evidence of giant optical anisotropy in single InAs QDs. Polarization-resolved photoluminescence spectroscopy in single QDs reveals a linear polarization ratio which fluctuates, from one dot to another, in sign and in magnitude with absolute values up to 82%. We do not observe any dependence of the linear polarization on incident power and temperature.
HAL (Le Centre pour la Communication Scientifique Directe), 2004
... Ivan Favero 1 , Guillaume Cassabois 1 , Aleksandar Jankovic 1 , Robson Ferreira 1 , David Dar... more ... Ivan Favero 1 , Guillaume Cassabois 1 , Aleksandar Jankovic 1 , Robson Ferreira 1 , David Darson 1 , Christophe Voisin 1 , Claude Delalande 1 , Philippe Roussignol 1 , Brian Gerardot 3 , Pierre Petroff 3 , Jean-Michel Gérard 2. (2004). ... Contributeur : Philippe Roussignol <>. ...
HAL (Le Centre pour la Communication Scientifique Directe), 2005
... Details der Publikation. Download, http://hal.ccsd.cnrs.fr/ccsd-00011212/en/. Herausgeber, HA... more ... Details der Publikation. Download, http://hal.ccsd.cnrs.fr/ccsd-00011212/en/. Herausgeber, HAL - CCSd - CNRS. Mitarbeiter, Philippe Roussignol. Archiv, CCSd/HAL : e-articles server (based on gBUS) (France). Keywords, Physics/Condensed Matter/Other. Typ, COMMUNICATION ...
HAL (Le Centre pour la Communication Scientifique Directe), 2007
The temperature-induced broadening of the optical spectrum is a major issue of the quantum dot op... more The temperature-induced broadening of the optical spectrum is a major issue of the quantum dot optical properties. Temperature-dependent measurements have shown that the line-shape can be described by the superposition of the so-called zero-phonon line and broad side-bands extending on several meV [1]. These side-bands arise from the radiative recombination of electron-hole pairs assisted by the emission and the absorption of acoustic phonons and are quantitatively interpreted in the framework of the Huang-Rhys theory. However, within this theoretical treatment, the zero-phonon line does not show any broadening with temperature in strong contrast with the literature which shows a wide dispersion of the data on the temperature dependence of this zero-phonon line-width [2-5]. We show here that the thermal activation of the processes leading to spectral diffusion in the motional narrowing regime [6] results in a Lorentzian zero-phonon line with a width that increases linearly with temperature. This extrinsic dephasing process is studied by systematic measurements of the linewidth for single quantum dots in the motional narrowing regime, i.e. with a zero-phonon line that keeps a Lorentzian profile in the investigated range of experimental parameters. This contribution to the temperature dependence of the zero-phonon line-width relies on an interaction between acoustic phonons and carriers outside the QDs in contrast with previous models where acoustic phonons interact with carriers inside the dot. Our original model provides a unified interpretation to the published data on the temperature dependence of the zero-phonon line. [1]L. Besombes, K. Kheng, L. Marsal, and H. Mariette, Phys. Rev. B 65, 121314 (2002). [2]C. Kammerer, C. Voisin, G. Cassabois, C. Delalande, Ph. Roussignol, F. Klopf, J. P. Reithmaier, A. Forchel, and J. M. G\'{e}rard, Phys. Rev. B 66, 041306 (2002). [3]B. Urbaszek, E. J. McGhee, M. Kruger, R. J. Warburton, K. Karrai, T. Amand, B. D. Gerardot, P. M. Petroff, and J. M. Garcia, Phys. Rev. B 69, 035304 (2004). [4]G. Ortner, D. R. Yakovlev, M. Bayer, S. Rudin, T. L. Reinecke, S. Fafard, Z. Wasilewski, and A. Forchel, Phys. Rev. B 70, 201301 (2004). [5]P. Borri, W. Langbein, U. Woggon, V. Stavarache, D. Reuter, and A. D. Wieck, Phys. Rev. B 71, 115328 (2005). [6]A. Berthelot, I. Favero, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, R. Ferreira, and J. M. G\'{e}rard, Nature Phys. 2, 759 (2006).
Physica E-low-dimensional Systems & Nanostructures, Feb 1, 2005
Polarization-resolved photoluminescence (PL) experiments have attracted much attention in recent ... more Polarization-resolved photoluminescence (PL) experiments have attracted much attention in recent years in view of understanding the exciton fine structure in single quantum dots (QDs) [1]. Assuming rotational symmetry of the QD along the growth axis, one predicts two bright ...
AIP Advances, Oct 1, 2014
Superconductor Science and Technology, Jan 9, 2017
Physical Review B, Feb 28, 2007
Nature Photonics, Jan 31, 2010
arXiv (Cornell University), Jul 2, 2010