Olivier Marty | Université Claude Bernard Lyon 1 (original) (raw)
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Papers by Olivier Marty
Advanced Optical Materials
physica status solidi (a), 2015
Engineering Materials, 2011
Thin Solid Films, 2010
Highly tensile strained (up to 2.2%) thin monocrystalline silicon (mc-Si) films were fabricated b... more Highly tensile strained (up to 2.2%) thin monocrystalline silicon (mc-Si) films were fabricated by a simple and low-cost method based on the in-plane expansion of meso-porous silicon (PS) substrates upon low temperature oxidation. To control the film thickness below 100nm, an original “two wafer” technique was employed during the porosification process. This method enables the fabrication of a 60nm thick
Physics Letters A, 2008
An impact of mechanical stresses on structural and photoluminescent properties of Si nanoparticle... more An impact of mechanical stresses on structural and photoluminescent properties of Si nanoparticles (NPs) incorporated into the zirconia thin films is reported. The stresses are found to be responsible for important structural modifications of the NPs. The zirconia matrix doped with the NPs exhibits bright red photoluminescence (PL) at room temperature due to efficient quantum confinement of the photogenerated carriers in the nanoscale Si particles. Spectral position of the PL picks depends on: mean dimension of the NPs, their concentration, stress induced deformation and order degree of the near-surface region. In general, zirconia matrix appears as a robust and reliable host media for Si NPs.
physica status solidi (RRL) - Rapid Research Letters, 2011
Materials Science and Engineering: B, 1998
Journal of Physics D: Applied Physics, 2011
Journal of Applied Physics, 2000
Journal of Applied Physics, 2007
![Research paper thumbnail of Influence of the interfacial chemical environment on the luminescence of 3C[Single Bond]SiC nanoparticles](https://attachments.academia-assets.com/73155409/thumbnails/1.jpg)
](Journal of Applied Physics, 2010
Japanese Journal of Applied Physics, 1999
10th Intern. Conf. on Indium Phosphide and Related Materials 11-15 May 1998 Tsukuba, Japan ... In... more 10th Intern. Conf. on Indium Phosphide and Related Materials 11-15 May 1998 Tsukuba, Japan ... Influence of strain compensation on structural and electrical properties of InAlAsDnGaAs HEMT structures grown om InP ... X. Letartre, P. Rojo-Romeo, J. Tardy, M. Bejar, M. Gendry
Advanced Optical Materials
physica status solidi (a), 2015
Engineering Materials, 2011
Thin Solid Films, 2010
Highly tensile strained (up to 2.2%) thin monocrystalline silicon (mc-Si) films were fabricated b... more Highly tensile strained (up to 2.2%) thin monocrystalline silicon (mc-Si) films were fabricated by a simple and low-cost method based on the in-plane expansion of meso-porous silicon (PS) substrates upon low temperature oxidation. To control the film thickness below 100nm, an original “two wafer” technique was employed during the porosification process. This method enables the fabrication of a 60nm thick
Physics Letters A, 2008
An impact of mechanical stresses on structural and photoluminescent properties of Si nanoparticle... more An impact of mechanical stresses on structural and photoluminescent properties of Si nanoparticles (NPs) incorporated into the zirconia thin films is reported. The stresses are found to be responsible for important structural modifications of the NPs. The zirconia matrix doped with the NPs exhibits bright red photoluminescence (PL) at room temperature due to efficient quantum confinement of the photogenerated carriers in the nanoscale Si particles. Spectral position of the PL picks depends on: mean dimension of the NPs, their concentration, stress induced deformation and order degree of the near-surface region. In general, zirconia matrix appears as a robust and reliable host media for Si NPs.
physica status solidi (RRL) - Rapid Research Letters, 2011
Materials Science and Engineering: B, 1998
Journal of Physics D: Applied Physics, 2011
Journal of Applied Physics, 2000
Journal of Applied Physics, 2007
Journal of Applied Physics, 2010
Japanese Journal of Applied Physics, 1999
10th Intern. Conf. on Indium Phosphide and Related Materials 11-15 May 1998 Tsukuba, Japan ... In... more 10th Intern. Conf. on Indium Phosphide and Related Materials 11-15 May 1998 Tsukuba, Japan ... Influence of strain compensation on structural and electrical properties of InAlAsDnGaAs HEMT structures grown om InP ... X. Letartre, P. Rojo-Romeo, J. Tardy, M. Bejar, M. Gendry