Danie Auret | University of Pretoria (original) (raw)

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Papers by Danie Auret

Research paper thumbnail of Damage formation in Ge during Ar+ and He+ implantation at 15K

Physica B: Condensed Matter, 2009

Research paper thumbnail of RBS investigation of annealed thin gold layers on crystalline germanium

Journal of Physics: Conference Series, 2008

In this work we report firstly on the behaviour of Schottky barrier diodes (SBD's... more In this work we report firstly on the behaviour of Schottky barrier diodes (SBD's) when subjected to thermal treatment after metallization. To better understand this, a systematic study of the interaction between thin gold films and crystalline germanium substrates was undertaken. Gold metal films having thicknesses of 30 and 100 nm have been prepared by means of thermal evaporation on

Research paper thumbnail of Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides

Applied Physics A Solids and Surfaces, 1993

Research paper thumbnail of Electrical characterization of rare-earth implanted GaN

Physica B: Condensed …, 2009

Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical pr... more Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium-(Eu) and xenon-(Xe) implanted GaN films on sapphire substrates. Implantation energy was 80keV with a fluence of 1× 1014cm− 2 ...

Research paper thumbnail of Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370meV below the conduction band

Research paper thumbnail of Electronic and transformation properties of a metastable defect introduced in n-type GaAs by α-particle irradiation

Physical Review B, 1995

... VOLUME 51, NUMBER 24 Electronic and transformation properties of a metastable defect introduc... more ... VOLUME 51, NUMBER 24 Electronic and transformation properties of a metastable defect introduced in n-type GaAs by a-particle irradiation F. Danie Auret, Rudolph M. Erasmus, Stewart A. Goodman, and Walter E ... 6M. Levinson, M. Stavola, JL Benton, and LC Kimerling, Phys. ...

Research paper thumbnail of Damage formation in Ge during Ar+ and He+ implantation at 15K

Physica B: Condensed Matter, 2009

Research paper thumbnail of RBS investigation of annealed thin gold layers on crystalline germanium

Journal of Physics: Conference Series, 2008

In this work we report firstly on the behaviour of Schottky barrier diodes (SBD's... more In this work we report firstly on the behaviour of Schottky barrier diodes (SBD's) when subjected to thermal treatment after metallization. To better understand this, a systematic study of the interaction between thin gold films and crystalline germanium substrates was undertaken. Gold metal films having thicknesses of 30 and 100 nm have been prepared by means of thermal evaporation on

Research paper thumbnail of Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides

Applied Physics A Solids and Surfaces, 1993

Research paper thumbnail of Electrical characterization of rare-earth implanted GaN

Physica B: Condensed …, 2009

Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical pr... more Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium-(Eu) and xenon-(Xe) implanted GaN films on sapphire substrates. Implantation energy was 80keV with a fluence of 1× 1014cm− 2 ...

Research paper thumbnail of Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370meV below the conduction band

Research paper thumbnail of Electronic and transformation properties of a metastable defect introduced in n-type GaAs by α-particle irradiation

Physical Review B, 1995

... VOLUME 51, NUMBER 24 Electronic and transformation properties of a metastable defect introduc... more ... VOLUME 51, NUMBER 24 Electronic and transformation properties of a metastable defect introduced in n-type GaAs by a-particle irradiation F. Danie Auret, Rudolph M. Erasmus, Stewart A. Goodman, and Walter E ... 6M. Levinson, M. Stavola, JL Benton, and LC Kimerling, Phys. ...

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