Khairul Anuar | Universiti Tun Hussein Onn Malaysia (original) (raw)

Papers by Khairul Anuar

AIP Conference Proceedings, 2017

RF (radiofrequency) system core size reduction is essential to operate it efficiently in RF power... more RF (radiofrequency) system core size reduction is essential to operate it efficiently in RF power and subsystem. In this drive system power loss minimization at controlled volume is the key feature. Magnetic nano-materials higher permeability enhance functionality, energy efficiency is related to device power density and system miniaturization. The major RF heating loss is associated to in plane impedance that is varied due to applied field and frequency band. Presenting impedance plane simulation software; resistance as well as inductive reactance at particular frequency band have been evaluated thus RF power loss is realized. Nano-crystalline core lowest resistance linked to highest conductivity appears to be potential for device shrinking, RF power and subsystem loss minimization.

2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 2013

We demonstrate fabrication of bottom-gate/top source-drain contacts for p-channel (small molecule... more We demonstrate fabrication of bottom-gate/top source-drain contacts for p-channel (small molecule) organic field-effect transistor (OFET) using pentacene as an active semiconductor layer and silicon dioxide as gate dielectric. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investigate the source-drain voltage (V ds) dependent mobility. The mobility which calculated using MATLAB simulation exhibited a range from 0.0234 to 0.0258 cm 2 /Vs with increasing source-drain voltage (average mobility was 0.0254 cm 2 /Vs). This work suggests that the mobility increase with increasing source-drain voltage similar to the gate voltage dependent mobility phenomenon.

2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 2013

2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 2013

The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ion... more The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is found that drain current for single (SC) and dual channel (DC) VESIMOS were increased sharply initially due to the presence of Germanium. Germanium has high impact ionization rates to ensure that the transition from OFF state to ON state is abrupt. However, breakdown voltage of the SC device was decreased from BV = 2.9V to 2.5V by increasing the composition of Ge from 10% to 30%. The same characteristics were found for DC VESIMOS where BV = 2V had decreased to 1.6V by varying the Ge composition. In short, the breakdown voltage which affected by the appearance of second SiGe channel and Ge composition was justified. Apart from that, with the presence of second SiGe channel, the switching speed and ION/IOFF of the device were improved. It was found that the sub-threshold slope of SC and DC VESIMOS were inversely proportional to the breakdown voltage. Hence, DC VESIMOS can be promoted as extraordinary candidate for low power nanoelectronics device.

2013 IEEE Student Conference on Research and Developement, 2013

Single Channel (SC) and Dual Channel (DC) Vertical Strained-SiGe Impact Ionization MOSFET (VESIMO... more Single Channel (SC) and Dual Channel (DC) Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found out that SC VESIMOS operate in conventional MOSFET mode at VDS = 1.75V, with 10% to 30% Ge mole fraction. However for Ge=50%, it's operated in Impact Ionization (II) mode with fast switching speed of subthreshold value, S=9.8 mV/dec. A better performance in threshold voltage, VTH, S value and ION/IOFF ratio were found in DC VESIMOS as compared to SC VESIMOS. The VTH=0.6V, S=10.98 mV/dec and ION/IOFF = 1×1013 were measured in DC VESIMOS with Ge=30% that clarify the advantage of DC utilization on VESIMOS device. These improvements were mainly due to the enhancement of electron mobility from 600 m2/V-s (first channel) to 1400 m2/V-s (second channel). The electron mobility was increased due to the splitting of conduction band valley into six fold where the electron mass are reduced in out of plane direction and thus enhanced the mobility of electron.

2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 2013

RF (radiofrequency) system core size reduction is essential to operate it efficiently in RF power... more RF (radiofrequency) system core size reduction is essential to operate it efficiently in RF power and subsystem. In this drive system power loss minimization at controlled volume is the key feature. Magnetic nano-materials higher permeability enhance functionality, energy efficiency is related to device power density and system miniaturization. The major RF heating loss is associated to in plane impedance that is varied due to applied field and frequency band. Presenting impedance plane simulation software; resistance as well as inductive reactance at particular frequency band have been evaluated thus RF power loss is realized. Nano-crystalline core lowest resistance linked to highest conductivity appears to be potential for device shrinking, RF power and subsystem loss minimization.

AIP Conference Proceedings, 2017

RF (radiofrequency) system core size reduction is essential to operate it efficiently in RF power... more RF (radiofrequency) system core size reduction is essential to operate it efficiently in RF power and subsystem. In this drive system power loss minimization at controlled volume is the key feature. Magnetic nano-materials higher permeability enhance functionality, energy efficiency is related to device power density and system miniaturization. The major RF heating loss is associated to in plane impedance that is varied due to applied field and frequency band. Presenting impedance plane simulation software; resistance as well as inductive reactance at particular frequency band have been evaluated thus RF power loss is realized. Nano-crystalline core lowest resistance linked to highest conductivity appears to be potential for device shrinking, RF power and subsystem loss minimization.

2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 2013

We demonstrate fabrication of bottom-gate/top source-drain contacts for p-channel (small molecule... more We demonstrate fabrication of bottom-gate/top source-drain contacts for p-channel (small molecule) organic field-effect transistor (OFET) using pentacene as an active semiconductor layer and silicon dioxide as gate dielectric. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investigate the source-drain voltage (V ds) dependent mobility. The mobility which calculated using MATLAB simulation exhibited a range from 0.0234 to 0.0258 cm 2 /Vs with increasing source-drain voltage (average mobility was 0.0254 cm 2 /Vs). This work suggests that the mobility increase with increasing source-drain voltage similar to the gate voltage dependent mobility phenomenon.

2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 2013

2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 2013

The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ion... more The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is found that drain current for single (SC) and dual channel (DC) VESIMOS were increased sharply initially due to the presence of Germanium. Germanium has high impact ionization rates to ensure that the transition from OFF state to ON state is abrupt. However, breakdown voltage of the SC device was decreased from BV = 2.9V to 2.5V by increasing the composition of Ge from 10% to 30%. The same characteristics were found for DC VESIMOS where BV = 2V had decreased to 1.6V by varying the Ge composition. In short, the breakdown voltage which affected by the appearance of second SiGe channel and Ge composition was justified. Apart from that, with the presence of second SiGe channel, the switching speed and ION/IOFF of the device were improved. It was found that the sub-threshold slope of SC and DC VESIMOS were inversely proportional to the breakdown voltage. Hence, DC VESIMOS can be promoted as extraordinary candidate for low power nanoelectronics device.

2013 IEEE Student Conference on Research and Developement, 2013

Single Channel (SC) and Dual Channel (DC) Vertical Strained-SiGe Impact Ionization MOSFET (VESIMO... more Single Channel (SC) and Dual Channel (DC) Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found out that SC VESIMOS operate in conventional MOSFET mode at VDS = 1.75V, with 10% to 30% Ge mole fraction. However for Ge=50%, it's operated in Impact Ionization (II) mode with fast switching speed of subthreshold value, S=9.8 mV/dec. A better performance in threshold voltage, VTH, S value and ION/IOFF ratio were found in DC VESIMOS as compared to SC VESIMOS. The VTH=0.6V, S=10.98 mV/dec and ION/IOFF = 1×1013 were measured in DC VESIMOS with Ge=30% that clarify the advantage of DC utilization on VESIMOS device. These improvements were mainly due to the enhancement of electron mobility from 600 m2/V-s (first channel) to 1400 m2/V-s (second channel). The electron mobility was increased due to the splitting of conduction band valley into six fold where the electron mass are reduced in out of plane direction and thus enhanced the mobility of electron.

2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 2013

RF (radiofrequency) system core size reduction is essential to operate it efficiently in RF power... more RF (radiofrequency) system core size reduction is essential to operate it efficiently in RF power and subsystem. In this drive system power loss minimization at controlled volume is the key feature. Magnetic nano-materials higher permeability enhance functionality, energy efficiency is related to device power density and system miniaturization. The major RF heating loss is associated to in plane impedance that is varied due to applied field and frequency band. Presenting impedance plane simulation software; resistance as well as inductive reactance at particular frequency band have been evaluated thus RF power loss is realized. Nano-crystalline core lowest resistance linked to highest conductivity appears to be potential for device shrinking, RF power and subsystem loss minimization.