Mikhail Basov | All-Russia research institute of automatics (original) (raw)

Papers by Mikhail Basov

The microassembly of pressure sensor chip with the modernized basic structure for the increase of... more The microassembly of pressure sensor chip with the modernized basic structure for the increase of stability and mechanical strength is presented in this patent. The classical structure of the piezoresistive pressure sensor chip uses the full Wheatstone bridge circuit with 4 piezoresistive resistors. The microassembly structure is necessary for the mechanical decoupling of the chip from any case material with the temperature coefficient of expansion different from silicon. Additionally, the microassembly design contains the structures in the form of stops for the multiple increase of mechanical strength from the overload/burst pressure relative to the nominal pressure. The microassembly design is intended for the measurement of differential pressure, therefore, it has stops on both sides. The certain geometry of the base with the pedestal made of silicon allows to remove the residual mechanical stresses from the case, which cause additional parasitic stresses both at the room temperature, relaxing with time (the influence on the long-term stability), and with the change of temperature (temperature hysteresis and coefficient of output signal). The connection between the chip, the base and the cap is made by frit layer. A certain gap between the front side of the chip, as well as the surfaces of the rigid islands (concentrators) of membrane and the base stop allows the membrane to bend freely within the nominal pressure and to slow down this bending under overload.

The microassembly of pressure sensor chip with an upgraded basic structure for improved long-term... more The microassembly of pressure sensor chip with an upgraded basic structure for improved long-term stability is presented in this patent. The classic structure of a piezoresistive pressure sensor chip uses a full Wheatstone bridge circuit with 4 piezoresistive resistors. The microassembly structure is necessary for better mechanical decoupling of the chip from any case material with a temperature coefficient of expansion different from silicon. The microassembly design is designed to measure differential pressure. A certain geometry of the base with a pedestal, where smoothed corners are formed (both in the horizontal and vertical planes), made of silicon, allows removing residual mechanical stresses from the case, which cause additional parasitic stresses both at room temperature, relaxing over time (influence on signal stability), and with temperature changes (temperature hysteresis and output signal coefficient). The connection between the chip, the base and the cover is made by a frit layer.

Long-term stability of output characteristics of piezoresistive pressure sensor chips in the form... more Long-term stability of output characteristics of piezoresistive pressure sensor chips in the form of microelectromechanical system (MEMS) is one of the most important parameters. The research analyzes the variation of useful signal of high sensitive pressure sensor chips and its errors in mechanical and temperature characteristics, which are also time-dependent. The main feature of this study is the application of the previously developed construction of mechanical part, which allows to achieve a balance between extremely high sensitivity and low error rates for ultra-low pressure range. The research demonstrates the changes after 5 years of aging for 24 pressure sensor chip samples (chip dimension 6.15×6.15 mm 2 ) for pressure range of 0.5 kPa with sensitivity S 0,5 atter = (34.5 ± 6.0) mV/V/kPa, nonlinearity 2K NL 0.5 atter =(0.71 ± 0.47) %/FS and temperature hysteresis up to 0.5% in the temperature range from -30°C to +60°C. The results of long-term stability of useful signal shows that the errors for 10 out of 24 samples does not exceed the values of 1.5%, which mostly connects with influence of residual mechanical stresses (MS) from the assembly design of pressure sensor.

Preprint

The stability of pressure sensor chip output characteristics using the piezoresistive method in t... more The stability of pressure sensor chip output characteristics using the piezoresistive method in the form of microelectromechanical system (MEMS) is one of the most important features for sensors, which simultaneously demonstrates the relevance of the principles for design construction and the choice of fabrication technology for all element structures. The research analyzes the changes in the useful signal, as well as errors in mechanical and temperature characteristics of highly sensitive pressure sensor chips, which are more explicitly dependent on external factors. The main feature of this development is the application of a new electrical circuit in the form of piezoresistive differential amplifier with negative feedback loop (PDA-NFL) utilizing bipolar junction transistors (BjT), which allows to achieve a balance between high sensitivity, small chip area and low errors. This research considers the variations of two batch with pressure sensor chip PDA-NFL samples (area 4.00x4.00 mm 2) for range of 1 kPa after 4.5 years (8 samples, sensitivity S1 after = (40.6 ± 6.4) mV/V/kPa, nonlinearity 2KNL 1 after = (0,81 ± 0.15) %/FS) and range of 5 kPa after 3.0 years (14 samples, sensitivity S5 after = (11.2 ± 1.8) mV/V/kPa, nonlinearity 2KNL 5 after = (0.10 ± 0.06) %/FS). The study demonstrates the unidirectional influence of residual mechanical stresses (RMS) from the pressure sensor assembly design on sensitivity and nonlinearity when pressure is applied from different sides of chip, initial membrane deflection, and temperature hysteresis errors.

RU 219402 U1, 2023

The difference from the prototype (RU 212797 U1) is the formation of a stop element on the upper ... more The difference from the prototype (RU 212797 U1) is the formation of a stop element on the upper surface of the base, which is used to create a volume with vacuum between the base and the chip. The height of the silicon stop has different dimensions depending on the specific bending of the chip membrane for different absolute pressure ranges. When an overload pressure is applied to the chip and without using the stop of base, the membrane damaged fully. It's happend because the thickness of glass frit for connecting has a large size. The absolute pressure sensor contains silicon pressure sensor chip, which is connected with silicon pedestal with complex structure by low temperature glass. Pressure sensor chip uses piezoresistive effect on piezoresistors in Wheatstone bridge circuit. The assembly process made in vacuum field, which is saved between backside of pressure sensor chip and base. The gap between right islands of membrane and plate of base has enough size for membrane deformation by applied pressure from the frontside of chip. The case of pressure sensor has hermetic volume and additional pressure is applied by tube from the bottom of case (in the same deration as pins). The complex structure of base can opportunity to decrease the residual mechanical stress from the influence of Kovar case on the silicon chip. The base has decreased area of connection between silicon construction and cases. Base separated on the two parts. The silicon pedestal has the upper and lower parts in the form of right-angled rectangular parallelepipeds, where the length of edge for the horizontal faces of the upper part is 2 to 5 times more than the length of edge for the horizontal faces of lower part and the length of vertical edge for the vertical faces of upper part is 2 to 5 times more than the length of vertical edge for the vertical edges of lower part. The dimensions of horizontal edge of the upper part are equal to the dimensions of pressure sensor chip. Finally, the error of long-term stability of pressure sensor is reduced, because the reason of high error is associated with the temporary relaxation of residual mechanical stresses in the assembly structure.

RU 219932 U1, 2023

The difference from the prototype (RU 212797 U1) is the formation of smooth figures between the l... more The difference from the prototype (RU 212797 U1) is the formation of smooth figures between the lower and upper parts of the base. Smooth transition areas have a surface shape in the form of a cylinder (vertically and horizontally cut of the base). Thanks to this design of the base, the residual mechanical stresses on the chip are reduced more. The absolute pressure sensor contains silicon pressure sensor chip, which is connected with silicon pedestal with complex structure by low temperature glass. Pressure sensor chip uses piezoresistive effect on piezoresistors in Wheatstone bridge circuit. The assembly process made in vacuum field, which is saved between backside of pressure sensor chip and base. The gap between right islands of membrane and plate of base has enough size for membrane deformation by applied pressure from the frontside of chip. The case of pressure sensor has hermetic volume and additional pressure is applied by tube from the bottom of case (in the same deration as pins). The complex structure of base can opportunity to decrease the residual mechanical stress from the influence of Kovar case on the silicon chip. The base has decreased area of connection between silicon construction and cases. Base separated on the two parts. The silicon pedestal has the upper and lower parts in the form of right-angled rectangular parallelepipeds, where the length of edge for the horizontal faces of the upper part is 2 to 5 times more than the length of edge for the horizontal faces of lower part and the length of vertical edge for the vertical faces of upper part is 2 to 5 times more than the length of vertical edge for the vertical edges of lower part. The dimensions of horizontal edge of the upper part are equal to the dimensions of pressure sensor chip. Finally, the error of long-term stability of pressure sensor is reduced, because the reason of high error is associated with the temporary relaxation of residual mechanical stresses in the assembly structure.

RU 212796 U1, 2022

RU 212797 U1, 2022

The absolute pressure sensor contains silicon pressure sensor chip, which is connected with silic... more The absolute pressure sensor contains silicon pressure sensor chip, which is connected with silicon pedestal with complex structure by low temperature glass. Pressure sensor chip uses piezoresistive effect on piezoresistors in Wheatstone bridge circuit. The assembly process made in vacuum field, which is saved between backside of pressure sensor chip and pedestal. The gap between right islands of membrane and plate of pedestal has enough size for membrane deformation by applied pressure from the frontside of chip. The case of pressure sensor has hermetic volume and additional pressure is applied by tube from the bottom of case (in the same deration as pins). The complex structure of pedestal can opportunity to decrease the residual mechanical stress from the influence of Kovar case on the silicon chip. The pedestal has decreased area of connection between silicon construction and cases. Pedestal separated on the two parts. The silicon pedestal has the upper and lower parts in the form of right-angled rectangular parallelepipeds, where the length of edge for the horizontal faces of the upper part is 2 to 5 times more than the length of edge for the horizontal faces of lower part and the length of vertical edge for the vertical faces of upper part is 2 to 5 times more than the length of vertical edge for the vertical edges of lower part/ Additionally, the dimensions of horizontal edge of the upper part are equal to the dimensions of pressure sensor chip. Finally, the error of long-term stability of pressure sensor is reduced, because the reason of high error is associated with the temporary relaxation of residual mechanical stresses in the assembly structure.

Sensors and Actuators A: Physical, 2019

The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junc... more The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the secondcircuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop. This is a green open access article under the CC BY license.

IEEE Sensors, 2021

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel... more High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

RU 204992 U1, 2021

The patent is presented in the original version in Russian. The invention is a combination of pre... more The patent is presented in the original version in Russian. The invention is a combination of pressure sensor in the form of a separate chip with temperature sensor in the form of a separate chip. Both sensors are located on a single case. The main objective of the invention is the use of a new small-sized temperature sensor (0.8x0.8x0.4 mm) instead of the classic pressure sensor (4.0x4.0x2.8 mm). The operation of the silicon pressure sensor in the range of 10 ... 1000 kPa is based on piezoresistive effect. The silicon temperature sensor chip has a Schottky diode structure. This is a modernized type of temperature sensor, which was previously shown in patent No. RU 2730890 C1. The temperature sensor with an increased breakdown voltage has been developed due to the formation of a second guard ring of p+ type conductivity. Correctly selected geometry of two guard rings takes into account the technological features of production. Space charge regions of guard ring intersect at a moment close to single breakdown voltage of each strucrure so a charge is redistributed and the breakdown voltage increases. Al is also deposited on the surface of the anode and cathode contact windows of the Schottky diode. In addition, the creation of pressure sensor is independent of the creation of separate temperature sensor. This simplifies the development process and technology. The temperature coefficient TC = -1.47 mV/C (with linearity kT <0.5% for the temperature range from -65 to +135 ⁰C) has been reached at a supply current I = 1 mA. Breakdown voltage of new temperature sensor rises from 75 V to 90 V. The breakdown voltage increase of temperature sensor allows to increase the temperature range of the sensor while maintaining a low error in nonlinearity. The aluminum ultra-low power temperature sensor pads are connected by aluminum wires to the case contacts where the Schottky diode cathode can be combined with the aluminum pressure sensor ground pad on a single case contact.

Sensors and Actuators A: Physical, 2021

The small silicon chip of Schottky diode (0.8 × 0.8 × 0.4 mm³) with planar arrangement of electro... more The small silicon chip of Schottky diode (0.8 × 0.8 × 0.4 mm³) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward current-voltage I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 10¹⁵ cm⁻³). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/°C (with linearity kT < 0.4% for temperature range of -65 to +85 °C) at supply current IF =1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 μA at 25 °C and IL < 130 μA at 85 °C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 °C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

Physica Scripta, 2021

Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transis... more Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0×4.0 mm2 chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2KNLback = 0.11 ± 0.09 %/FS (pressure is applied from the back side of pressure sensor chip) and 2KNLtop = 0.18 ± 0.09 %/FS (pressure is applied from the top side of pressure sensor chip). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.

RU 202558 U1, 2021

The patent is presented in the original version in Russian. The invention is combination of press... more The patent is presented in the original version in Russian. The invention is combination of pressure sensor as separate chip with temperature sensor as separate chip. Sensors are located on the single case. Main goal of this invention is using new small temperature sensor (0.8x0.8x0.4 mm) for classic pressure sensor (4.0x4.0x2.8 mm). The method of operation for the silicon pressure sensor for range of 10 ... 1000 kPa is based on the piezoresistive effect. The silicon chip of temperature sensor has Schottky diode structure. This is the upgraded type of sensor that was previously showed in patent No. RU 2730890 C1. The ultra-reduced power consumption temperature sensor is based on Schottky barrier between silicon (n-Si: Nd = 3 × 10^15 cm^(-3)) and Mo (previously Al was used as a metal). Al is also deposited on the surface of contact windows for the anode and cathode of Schottky diode. It’s necessary for the application of ultrasonic welding. The Mo-Si Schottky barrier with a certain technological annealing of the structure (U = 0.21 mV for supply current I = 1 mA and U = 0.30 mV for supply current I = 10 mA) makes it possible to reduce forward voltage drop in contrast to Al-Si Schottky barrier (U = 0.24 mV for supply current I = 1 mA and U = 0.33 mV for supply current I = 10 mA). The power consumption of the development is much lower than the values of diodes on p-n-junctions, which are often used in a joint design with a pressure sensor. Additionally, the pressure sensor creation is independent of separate temperature sensor creation. This simplifies the development process and technology. The temperature coefficient TC = -1.64 mV/⁰C (with linearity kT <0.5% for temperature range of -50 to +120 ⁰C) at supply current I = 1 mA is achieved. The temperature coefficient of Mo-Si Schottky barrier is higher than the temperature coefficient of Al-Si Schottky barrier (TC = -1.47 mV/⁰C at supply current I = 1 mA). The aluminum contact pads of ultra-reduced power consumption temperature sensor connect by aluminum wires with case pins, where the cathode of the Schottky diode is able to combine with the aluminum contact pad “ground” of the pressure sensor on the single case pin. The photo with the location of sensors and welding of wires is shown in Fig.1. It’s possible due to anode protective ring for the temperature sensor, so its breakdown reverse voltage is high (Ub > 75 V at room temperature) as on pressure sensor.

IEEE Sensors Journal, 2020

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure se... more The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low temperature coefficient of zero signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

RU 2730890 C1, 2020

The invention is the pressure sensor as separate chip with combination of silicon construction wi... more The invention is the pressure sensor as separate chip with combination of silicon construction with integral temperature sensor as separate chip. The pressure sensor with reduced power consumption temperature sensor are located on the single case, which has the ways for possibility of supplying differential pressure to the pressure sensor, eight pins for supplying or reading of electrical signal from pressure sensor and temperature sensor. Main goal of this invention is using new small temperature sensor (0.8x0.8x0.4 mm) for classic pressure sensor (4.0x4.0x2.8 mm). The work of pressure sensor for 10…1000 kPa range is based on piezoresistive effect, where piezoresistors are located on maximum mechanical stress regions of silicon membrane. The temperature sensor is a Schottky diode. Their aluminum contact pads are connected with an aluminum wire with the pin, where the cathode of the Schottky diode is able to combine with the aluminum contact pad “ground” of the pressure sensor on the single pin of case. It’s possible due to the presence of anode protective ring for the temperature sensor, so its breakdown reverse voltage is high (Ub > 75 V at room temperature). The operation of the Schottky diode is based on the Schottky barrier potential, which makes it possible to reduce the forward voltage drop (U = 0.24 mV for supply current I = 1 mA and U = 0.33 mV for supply current I = 10 mA) or subsequently consumed power relative to the famous values of p-n-junctions diodes. The characteristic of the dependence of the voltage drop across the Schottky diode at forward bias at different current ratings on temperature is linear in a wide range of studies T = -50…+120 ⁰C: temperature sensitive ST = -1.25 mV/⁰C for supply current I = 10 mA and ST = -1.47 mV/⁰C for supply current I = 1 mA.

Journal of Micromechanics and Microengineering, 2020

A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a ... more A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV/kPa/V) and nonlinearity (2KNL samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure Pburst up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respdectively).

IEEE Sensors Journal , 2020

The investigation of the pressure sensor chip's design developed for operation in ultralow differ... more The investigation of the pressure sensor chip's design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a diaphragm has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/kPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 kPa. The developed pressure sensor can be used in medicine, automotive industry and highly specialized scientific developments. Index Terms-piezoresistive pressure sensor, high sensitivity, temperature error, high mechanical strength, technology upgrading .

Journal of Micromechanics and Microengineering, Apr 27, 2020

A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utiliz... more A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing a piezosensitive transistor differential amplifier with negative feedback loop is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I-V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.

Preprint

RU 219402 U1, 2023

RU 219932 U1, 2023

RU 212796 U1, 2022

RU 212797 U1, 2022

Sensors and Actuators A: Physical, 2019

IEEE Sensors, 2021

RU 204992 U1, 2021

Sensors and Actuators A: Physical, 2021

Physica Scripta, 2021

RU 202558 U1, 2021

IEEE Sensors Journal, 2020

RU 2730890 C1, 2020

Journal of Micromechanics and Microengineering, 2020

IEEE Sensors Journal , 2020

Journal of Micromechanics and Microengineering, Apr 27, 2020

Thesis Abstract, 2022

This is the short version of my Thesis in English. The topic of this thesis is devoted to the use... more This is the short version of my Thesis in English. The topic of this thesis is devoted to the use of various solutions for electrical circuits of pressure sensor (PS) chips. The piezoresistive differential amplifier (PDA) with 4 piezoresistors (PR) and piezoresistive differential amplifier with negative feedback loop (PDA-NFL) with 8 PRs used as electrical circuit. The use of deformable and non-deformable bipolar junction transistors (BjT) with vertical structure npn-type (V-NPN) and lateral structure pnp-type (L-PNP) is considered. The first, the output characteristics of developed piezoresistive PDA chip are researched in the comparative analysis relative to analog TMU18 with Wheatstone bridge (WB) circuit for 60 kPa pressure range. The analysis confirmed the possibility of sensitivity increasing by 2.2 times while maintaining the input conditions for geometry of mechanical structure and supply voltage. The second, the output characteristics of the developed piezoresistive PDA-NFL chip are researched in the comparative analysis relative to analog IPD60 with WB circuit for 60, 160 and 600 kPa pressure ranges. The analysis confirmed the possibility of sensitivity increasing by 3.5 times while maintaining the input conditions for geometry of mechanical structure, supply voltage and low errors; or minimization of chip area by 2.4 times while maintaining sensitivity. The possibility of reducing the noise of zero output signal by 20 times and the errors of temperature characteristics by more than an order relative to the parameters of piezoresistive PDA chip has been confirmed. The third, the output characteristics of ultra-highly sensitive small-sized PDA-NFL chip confirmed the possibility of simultaneously sensitivity increasing by 5.8 times and reducing chip area by 2.4 times relative to the analog IPD52 with WB circuit for 10 kPa range and while maintaining supply voltage and low errors.

Thesis, 2022

The topic of this thesis is devoted to the use of various solutions for electrical circuits of pr... more The topic of this thesis is devoted to the use of various solutions for electrical circuits of pressure sensor (PS) chips. The piezoresistive differential amplifier (PDA) with 4 piezoresistors (PR) and piezoresistive differential amplifier with negative feedback loop (PDA-NFL) with 8 PRs used as electrical circuit. The use of deformable and non-deformable bipolar junction transistors (BjT) with vertical structure npn-type (V-NPN) and lateral structure pnp-type (L-PNP) is considered. The first, the output characteristics of developed piezoresistive PDA chip are researched in the comparative analysis relative to analog TMU18 with Wheatstone bridge (WB) circuit for 60 kPa pressure range. The analysis confirmed the possibility of sensitivity increasing by 2.2 times while maintaining the input conditions for geometry of mechanical structure and supply voltage. The second, the output characteristics of the developed piezoresistive PDA-NFL chip are researched in the comparative analysis relative to analog IPD60 with WB circuit for 60, 160 and 600 kPa pressure ranges. The analysis confirmed the possibility of sensitivity increasing by 3.5 times while maintaining the input conditions for geometry of mechanical structure, supply voltage and low errors; or minimization of chip area by 2.4 times while maintaining sensitivity. The possibility of reducing the noise of zero output signal by 20 times and the errors of temperature characteristics by more than an order relative to the parameters of piezoresistive PDA chip has been confirmed. The third, the output characteristics of ultra-highly sensitive small-sized PDA-NFL chip confirmed the possibility of simultaneously sensitivity increasing by 5.8 times and reducing chip area by 2.4 times relative to the analog IPD52 with WB circuit for 10 kPa range and while maintaining supply voltage and low errors.

The tendencies of development for modern control and management systems testify to the growing ur... more The tendencies of development for modern control and management systems testify to the growing urgency of using converters physical quantities. The primary element of monitoring and control systems that supplies data for pressure of gas and liquid are the pressure sensors (PS). Since the 60s of the last century and up to date the most common principle of sensing element (SE) functioning is the mechanism of the tensoresistive effect in semiconductor structures (silicon die). SE of PS is formed using microelectromechanical system (MEMS) technology. The electrical circuit measurements signal by pressure is represented in the form of strain-sensitive Wheatstone bridge, which made by four strain-sensitive resistors. In the presented development of SE is formed from not only passive components in the form of p-type resistors, but also active – vertical n-p-n bipolar transistors. SE has the electrical circuit of strain-sensitive differential amplifier (PSDA). PSDA can significantly increase the output sensitivity by respect to Wheatstone bridge.

Conference: International Conference on Electrotechnical Complexes and Systems (ICOECS 2022), 2022

Characteristics of high sensitivity MEMS pressure sensor chip for 10 kPa utilizing a novel electr... more Characteristics of high sensitivity MEMS pressure sensor chip for 10 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The experimental results prove that pressure sensor chip PDA-NFL with 4.0×4.0 mm2 chip area has sensitivity S = 10.1 ± 2.3 mV/V/kPa with nonlinearity of 2KNL = 0.26 ± 0.12 %/FS (pressure is applied from the back side of pressure sensor chip).

XIV Russian Conference of Semiconductor Physics, 2019

The creation of pressure sensor chip in the form of microelectromechanical systems is one of the ... more The creation of pressure sensor chip in the form of microelectromechanical systems is one of the progressive directions in microelectronics, which, along with all areas of the semiconductor industry, determines the trends in modern production of electronic equipment. One of the relevant vectors for the development of pressure sensor silicon chips with a membrane structure, which operate on the basis of piezoresistive effect, is the using of active elements - BJTs as part of the electrical measuring circuit. The work of a new type of pressure sensor chip using a radically new electric circuit in the form of a pressure sensitive differential amplifier with negative feedback. BJT has a horizontal p-n-p structure.

XII Scientific and technical conference "VNIIA-2018", 2018

The report presents the results of modeling a highly sensitive element of the pressure sensor, wh... more The report presents the results of modeling a highly sensitive element of the pressure sensor, which made in the form of a MEMS silicon chip. The circuitry and technological aspects of building a thermally stable system based on the functioning of the electrical circuit of a differential amplifier with negative feedback have been developed. A comparative analysis of the strain sensitivity relative to analogues with the electrical circuit of the Wheatstone resistive bridge is carried out.

XI Scientific and technical conference "VNIIA-2017", 2017

Research of a highly sensitive MEMS pressure based on the operation of differential amplifier ele... more Research of a highly sensitive MEMS pressure based on the operation of differential amplifier electrical circuit with pressure sensitive active (BJT n-p-n transistor) and passive (p-type resistor) elements are carried out. A comparative analysis is carried out with respect to analogues on the piezoresistive Wheatstone bridge.

The thesis of the conference report, 2014

Conference paper presents first steps of investigation for high-sensitivity MEMS pressure sensor ... more Conference paper presents first steps of investigation for high-sensitivity MEMS pressure sensor based on vertical bipolar NPN transistor. The report is written in Russian in 2014

2021 IEEE Sensors, 2021