Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm (original) (raw)
Related papers
2013
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is becoming a key device in high-speed optical local-area networks (LANs) and even wide-area networks (WANs). This device is also enabling ultra parallel data transfer in equipment and computer systems. In this work, the performance characteristics of a designed AlGaInAs/InP based 1550nm multiple quantum well (MQW) VCSEL have been obtained through computations. The obtained characteristics have been analyzed for obtaining better performance. For achieving a superior performance, the concentrations of AlGaInAs QW material have been chosen using the results of other research works. The material gain of a compressive strained Al0.09Ga0.38In0.53As/InP MQW VCSEL has been theoretically computed. Using the peak material gain obtained from this computation the performance characteristics of the designed VCSEL have been obtained. At 300K, the threshold current of the VCSEL has been obtained as 0.61mA. A maximum output power of 2.24mW has bee...
1.3-μm-range GaInNAsSb-GaAs VCSELs
IEEE Journal of Selected Topics in Quantum Electronics, 2003
1.3-m-range GaInNAsSb vertical-cavity surfaceemitting lasers (VCSELs) with the doped mirror were investigated. GaInNASb active layers that include a small amount of Sb can be easily grown in a two-dimensional manner as compared with GaInNAs due to the suppression of the formation of three-dimentional growth in MBE growth. The authors obtained the lowest th per well (150 A/cm 2 /well) for the edge-emission type lasers due to the high quality of GaInNAsSb quantum wells. Using this material for the active media, the authors accomplished the first continuous wave operation of 1.3-m-range GaInNAsSb VCSELs. For the reduction of the threshold voltage and the differential resistance, they used the doped mirror grown by metal-organic chemical vapor deposition (MOCVD). By three-step growth, they obtained 1.3m GaInNAs-based VCSELs with the low threshold current density (3.6 kA/cm 2 ), the low threshold voltage (1.2 V), and the low differential resistance (60 ) simultaneously for the first time. The back-to-back transmission was carried out up to 5 Gb/s. Further, the uniform operation of 10-ch VCSEL array was demonstrated. The maximum output power of 1 mW was obtained at 20 C by changing the reflectivity of the front distributed Bragg reflector mirror. GaInNAsSb VCSELs were demonstrated to be very promising material for realizing the 1.3m signal light sources, and the usage of the doped mirror grown by MOCVD is the best way for 1.3m VCSELs.
GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 mu\mumum
IEEE Journal of Selected Topics in Quantum Electronics, 2009
In this paper, we present a device concept and results of an electrically pumped vertical-cavity surface-emitting laser in the (AlGaIn)(AsSb) material system grown on GaSb substrate. The structure consists of an n-doped GaSb/AlAsSb distributed Bragg reflector and a type-I GaInAsSb/AlGaAsSb active region, and incorporates a type-III p +-GaSb/n +-InAsSb buried tunnel junction for current as well as optical confinement. Continuous-wave operation up to 75 • C has been achieved at a wavelength of 2.3 µm. The mid-IR emission, the large tunability over a wavelength range of more than 10 nm combined with its single-mode operation makes this device ideally suited for gas-sensing applications.
Electrical Design Optimization of Single-Mode Tunnel-Junction-Based Long-Wavelength VCSELs
IEEE Journal of Quantum Electronics, 2006
We present principles for tunnel-juhction (TJ) design optimization for use in intracavity contacted long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs). Using the WKB approximation, we find that layer thicknesses of 10 nm on the n++ side and 10 mn on the p++ side are large enough to maximize quantum tunneling probability and small enough to yield low optical free-carrier absorption loss. We also conjecture that our experimental test structures and actual devices have far lower active acceptor concentration than we expect based on an analytical model. Finally, we calculate the necessary doping levels to enable single-mode operation of LW-VCSELs and incorporate these conditions into a complete optimized model of our VCSELs. Based on optimal I-V curves, we can expect an increase in single-mode output power from 2 to 3.5 mW.
GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 µm
In this paper, we present a device concept and results of an electrically pumped vertical-cavity surface-emitting laser in the (AlGaIn)(AsSb) material system grown on GaSb substrate. The structure consists of an n-doped GaSb/AlAsSb distributed Bragg reflector and a type-I GaInAsSb/AlGaAsSb active region, and incorporates a type-III p+-GaSb/n+-InAsSb buried tunnel junction for current as well as optical confinement. Continuous-wave operation up to 75degC has been achieved at a wavelength of 2.3 mum. The mid-IR emission, the large tunability over a wavelength range of more than 10 nm combined with its single-mode operation makes this device ideally suited for gas-sensing applications.
IEEE Journal of Selected Topics in Quantum Electronics, 2003
We have investigated the temperature and pressure dependence of the threshold current ( th ) of 1.3 m emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) and the equivalent edge-emitting laser (EEL) devices employing the same active region. Our measurements show that the VCSEL devices have the peak of the gain spectrum on the high-energy side of the cavity mode energy and hence operate over a wide temperature range. They show particularly promising th temperature insensitivity in the 250-350 K range. We have then used a theoretical model based on a 10-band k.P Hamiltonian and experimentally determined recombination coefficients from EELs to calculate the pressure and temperature dependency of th . The results show good agreement between the model and the experimental data, supporting both the validity of the model and the recombination rate parameters. We also show that for both device types, the super-exponential temperature dependency of th at 350 K and above is due largely to Auger recombination.
Characteristics of GaInNAsSb VCSELs operating near 1.55 µm
Proceedings of SPIE: The International Society for Optical Engineering, 2008
A detailed study of the high-power pulsed operation of C-band optically-pumped GaInNAsSb vertical cavity surface emitting lasers is reported. The devices employ a resonant periodic gain structure grown by molecular beam epitaxy on a GaAs substrate with a 31-pair GaAs/AlAs bottom distributed Bragg reflector and a 4-λ, GaAs-based resonant cavity containing 10 GaInNAsSb quantum wells distributed among the 7 antinodes of the electric field. A dual-pump-band SiO2/TiO2 dielectric top mirror allows efficient optical ...
GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 $\mu$m
IEEE Journal of Selected Topics in Quantum Electronics, 2000
In this paper, we present a device concept and results of an electrically pumped vertical-cavity surface-emitting laser in the (AlGaIn)(AsSb) material system grown on GaSb substrate. The structure consists of an n-doped GaSb/AlAsSb distributed Bragg reflector and a type-I GaInAsSb/AlGaAsSb active region, and incorporates a type-III p + -GaSb/n + -InAsSb buried tunnel junction for current as well as optical confinement. Continuous-wave operation up to 75 • C has been achieved at a wavelength of 2.3 µm. The mid-IR emission, the large tunability over a wavelength range of more than 10 nm combined with its single-mode operation makes this device ideally suited for gas-sensing applications.
2003
We have investigated the temperature and pressure dependence of the threshold current (th) of 1.3 m emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) and the equivalent edge-emitting laser (EEL) devices employing the same active region. Our measurements show that the VCSEL devices have the peak of the gain spectrum on the high-energy side of the cavity mode energy and hence operate over a wide temperature range. They show particularly promising th temperature insensitivity in the 250-350 K range. We have then used a theoretical model based on a 10-band k.P Hamiltonian and experimentally determined recombination coefficients from EELs to calculate the pressure and temperature dependency of th. The results show good agreement between the model and the experimental data, supporting both the validity of the model and the recombination rate parameters. We also show that for both device types, the super-exponential temperature dependency of th at 350 K and above is due largely to Auger recombination.
2018
In high speed optical data communication networks vertical cavity surface emitting laser (VCSEL) is becoming a vital device. In this paper, the characteristics and performance of a recently designed GaAs-based 1550 nm Ga0.591 In0.409 N0.028 As0.89 Sb0.08 multiple quantum well (MQW) VCSEL have been investigated and analyzed. The steady state carrier density is found to be 2.811 × 10 cm and the steady state photon density is obtained as 1.129 × 10 15 cm -3 . The steady state output power obtained for this VCSEL is 84.5 mW. Maximum modulation bandwidth of 20.5 GHz is obtained at 16 mA injection current.