Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing (original) (raw)

Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing

Applied Surface Science, 2008

Abstract

Chemical mechanical polishing of free-standing GaN substrates is found to reduce the reverse leakage current of Ni/Au Schottky diodes fabricated on the Ga-face. The barrier height extracted from current–voltage measurements is found to increase from 0.4 eV on un-treated ...

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