A Systematic Technique for Designing Wideband RF Power Amplifiers (original) (raw)
A novel method to design wideband power amplifier for wireless communication
2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013
A new approach is presented to design microwave amplifiers to deliver maximum output power using Simplified Real Frequency Technique (SRFT). Proposed method tracks the maximum stable gain (MSG) curve of the active device (BJT, FET etc.) under consideration. Maximum Stable Gain Amplifier (MSGA) possesses higher gain than that of the constant or Flat Gain Amplifier (FGA) along the operating frequency band. Compared to FGA, it is this feature that makes MSGA high efficiency and low DC power consumption amplifier. Employing the proposed design method, a MSG power amplifier is constructed over the frequency band of 800-5200 MHz which can be utilized for GSM, UMTS, Wi-Fi and Wi-MAX applications.
Introduction to RF Power Amplifier Design and Simulation
Introduction to RF Power Amplifier Design and Simulation, 2015
Introduction to RF Power Amplifier Design and Simulation By Abdullah Eroglu Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book: Gives an overview of intermodulation and elaborates on the difference between q linear and nonlinear amplifiers Describes the high-frequency model and transient characteristics of q metal-oxide-semiconductor field-effect transistors Details active device modeling techniques for transistors and parasitic q extraction methods for active devices Explores network and scattering parameters, resonators, matching networks, q and tools such as the Smith chart Covers power-sensing devices including four-port directional couplers and new q types of reflectometers Presents RF filter designs for power amplifiers as well as application examples q of special filter types Demonstrates the use of computer-aided design (CAD) tools, implementing q systematic design techniques Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.
Development of Wideband Power Amplifier for RF / Microwave Front-End Subsystem
Jurnal Teknologi, 2014
This paper reviews the Wideband Power Amplifier (PA) that has been developed since 1990. Several journals had been discussed in this paper covers few topics such as Characterization of Power Amplifiers, Power Amplifier Architecture and Linearization Technique. Advantages and disadvantages of the technique used had been highlighted as well as the summary of those cases been compiled in the table form for comparison purposes. Power Amplifier is one of the important parts in transmitter. However, when involve transistor as an active device, it is important to ensure that the signals are stabilized and transmitted at higher efficiency. This leads to the proposal of a new design of Wideband Power Amplifier based on the concept of the multiplexer.
Transistor Device Optimization for RF Power Amplifier Employing Rapid Envelope Load-Pull System
2010
This paper reports mathematical explanation and the application domain of rapid envelope load-pull system. It is demonstrated that this novel load-pull technique finds immediate use in the optimization of transistor devices for the design of microwave power amplifiers. The limitations of the existing load-pull systems severely affect the overall performance optimization of transistor devices. The envelope load-pull improves on the limitations of the existing systems and thus provides a very effective methodology for the design and investigation of the RF power amplifiers. Initially the paper describes the mathematical foundation of the envelope load- pull concept and then the rapid, accurate and reliable measurement capability of the system is presented. It clearly vindicates the potential areas of application of the system in improving the measurement throughput and yield optimization of the microwave devices. Finally, the harmonic envelope load-pull is utilized on a commercially a...
RF power amplifier design for high-efficiency applications
Unmanned/Unattended Sensors and Sensor Networks V, 2008
In this paper a time domain waveform measurement system with active harmonic load-pull has been used to enhance the design cycle of RF power amplifiers (PAs). Wave-shaping (waveform engineering) techniques using Cardiff University's high power waveform measurement system have yielded optimum device conditions enabling a rapid PA realisation with a first-pass success. The resulting inverse class-F design, based on a 10W GaN HEMT device, is operating at 0.9GHz, and achieving 81.5% drain efficiency in both the load-pull emulated state and also in the directly realised PA. The value of measured waveforms, and the ability to engineer optimum waveforms to a specific amplifier mode, is demonstrated in this study.
An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System
IOP Conference Series: Earth and Environmental Science, 2013
Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.
Enfoqute, 2015
This paper provides a detailed description and all the procedures involved in designing a power amplifier using microstrip technology and the design software Microwave OfficeTM. Specifically, the design is oriented to build an amplifier with central frequency at 14 GHz, but the same fundamentals and principles could be applied in the whole range of radio frequency. For the design, a MESFET transistor and simultaneous input and output matching networks are considered. The values of the parameters and the simulation for every stage are computed and performed using AWR Microwave OfficeTM. At the end of the document, a fully functional circuit layout represented in 2D and 3D is shown with all their complementary elements
Power Amplifier Design Methodologies for Next Generation Wireless Communications
IETE Technical Review, 2014
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Indonesian Journal of Electrical Engineering and Informatics (IJEEI), 2020
This work presents a broadband power amplifier in S-band in microstrip technology. The proposed power amplifier is modeled with a single-stage architecture based on a field effect transistor ATF13786 of Agilent Technologies (hp) ®. The used transistor has been biased with transmission lines and it has been matched with networks in the form of λ/4 transformers filters at the input and at the output. This amplifier has been studied and optimized using the Advanced Design System (ADS ®) software. The simulation results of the output power and S parameters show excellent characteristics with a satisfactory gain greater than 10.9 dB, low reflections, a saturated output power of 16.4 dBm with a 1 dB compression point at an input power level of about 5 dBm, a maximum PAE of 25.3% and unconditional stability in the desired frequency band. The modeled amplifier can be integrated into mobile communications systems namely LTE mobile networks (2500 to 2690 MHz) and wireless networks using Wi-Fi protocol (2400 to 2485 MHz).