A Systematic Technique for Designing Wideband RF Power Amplifiers (original) (raw)
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A novel method to design wideband power amplifier for wireless communication
2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013
A new approach is presented to design microwave amplifiers to deliver maximum output power using Simplified Real Frequency Technique (SRFT). Proposed method tracks the maximum stable gain (MSG) curve of the active device (BJT, FET etc.) under consideration. Maximum Stable Gain Amplifier (MSGA) possesses higher gain than that of the constant or Flat Gain Amplifier (FGA) along the operating frequency band. Compared to FGA, it is this feature that makes MSGA high efficiency and low DC power consumption amplifier. Employing the proposed design method, a MSG power amplifier is constructed over the frequency band of 800-5200 MHz which can be utilized for GSM, UMTS, Wi-Fi and Wi-MAX applications.
Introduction to RF Power Amplifier Design and Simulation
Introduction to RF Power Amplifier Design and Simulation, 2015
Introduction to RF Power Amplifier Design and Simulation By Abdullah Eroglu Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book: Gives an overview of intermodulation and elaborates on the difference between q linear and nonlinear amplifiers Describes the high-frequency model and transient characteristics of q metal-oxide-semiconductor field-effect transistors Details active device modeling techniques for transistors and parasitic q extraction methods for active devices Explores network and scattering parameters, resonators, matching networks, q and tools such as the Smith chart Covers power-sensing devices including four-port directional couplers and new q types of reflectometers Presents RF filter designs for power amplifiers as well as application examples q of special filter types Demonstrates the use of computer-aided design (CAD) tools, implementing q systematic design techniques Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.
Development of Wideband Power Amplifier for RF / Microwave Front-End Subsystem
Jurnal Teknologi, 2014
This paper reviews the Wideband Power Amplifier (PA) that has been developed since 1990. Several journals had been discussed in this paper covers few topics such as Characterization of Power Amplifiers, Power Amplifier Architecture and Linearization Technique. Advantages and disadvantages of the technique used had been highlighted as well as the summary of those cases been compiled in the table form for comparison purposes. Power Amplifier is one of the important parts in transmitter. However, when involve transistor as an active device, it is important to ensure that the signals are stabilized and transmitted at higher efficiency. This leads to the proposal of a new design of Wideband Power Amplifier based on the concept of the multiplexer.
Transistor Device Optimization for RF Power Amplifier Employing Rapid Envelope Load-Pull System
2010
This paper reports mathematical explanation and the application domain of rapid envelope load-pull system. It is demonstrated that this novel load-pull technique finds immediate use in the optimization of transistor devices for the design of microwave power amplifiers. The limitations of the existing load-pull systems severely affect the overall performance optimization of transistor devices. The envelope load-pull improves on the limitations of the existing systems and thus provides a very effective methodology for the design and investigation of the RF power amplifiers. Initially the paper describes the mathematical foundation of the envelope load- pull concept and then the rapid, accurate and reliable measurement capability of the system is presented. It clearly vindicates the potential areas of application of the system in improving the measurement throughput and yield optimization of the microwave devices. Finally, the harmonic envelope load-pull is utilized on a commercially a...
RF power amplifier design for high-efficiency applications
Unmanned/Unattended Sensors and Sensor Networks V, 2008
In this paper a time domain waveform measurement system with active harmonic load-pull has been used to enhance the design cycle of RF power amplifiers (PAs). Wave-shaping (waveform engineering) techniques using Cardiff University's high power waveform measurement system have yielded optimum device conditions enabling a rapid PA realisation with a first-pass success. The resulting inverse class-F design, based on a 10W GaN HEMT device, is operating at 0.9GHz, and achieving 81.5% drain efficiency in both the load-pull emulated state and also in the directly realised PA. The value of measured waveforms, and the ability to engineer optimum waveforms to a specific amplifier mode, is demonstrated in this study.
Index 363 VIII I RF POWER AMPLIFIERS priori the circuit topologies and the basic operation principles as well as limitations of the various amplification classes. Selecting the appropriate circuit topology and operating mode, knowing their pros and cons, and setting realistic goals for the expected performance are imperative for beginning a practical design. Then CAD simulators and/or experimental tweaking will be successful in optimizing the design. This book covers the basics of the RF power amplifiers, such as amplification classes, basic circuit topologies, bias circuits and matching networks. An exhaustive coverage of the power amplifier area is beyond the scope of the book; therefore, applications, system architecture concepts, and linearization techniques are not discussed here.
A High Efficient Solid State Power Amplifier at 3.5 GHz for Wireless Communication
IEEE, 2024
This paper outlines the development of a class-AB power amplifier operating at a frequency of 3.5 GHz, prioritizing high efficiency. It utilizes the Cree transistor CG2H40010F GaN-HEMT, known for delivering up to 62% drain efficiency. To strike a balance between maximum power-added efficiency and output power across the desired bandwidth, matching networks are employed. A parallel RC network is implemented at the gate terminal to enhance stability while maintaining gain. Input and output matching networks are also utilized to match impedance, and the circuit is optimized to achieve high power-added efficiency, output power, and gain. The designed power amplifier offers an output power of 10.334 W, a power-added efficiency of 50%, and a drain efficiency of 61%.
Design of RF Power Amplifier for Military Applications
2014
This paper discusses about the design of RF amplifier by considering linearity and efficiency as most important parameter. The amplifier must have unconditionally stable. This is to make sure that the device can work at the frequency desired conditions. In modern radio telecommunication system the design of linear and efficient radio frequency power amplifier present one of the most challenging design problems. The main purpose of RF power amplifier is to boost radio signal to a sufficient power level for transmission through transmission Medium from the transmitter to the receiver. In general, relatively high transmit power levels are needed and the power consumption of the power amplifier easily dominates over all other electronics and digital processing. In this paper, the calculations of the parameters are done with the low-power consumption (0 dBm max) and over specified frequency range of 1.7-2.1G Hz, thus RF power amplifier is simulated to deliver the output power of 10W. Hence it is used to meet the necessities of a secured communication in the military areas and variety of applications.
Design Strategies for Efficient and Linear RF Power Amplifiers
Proceedings of ARMMS …, 2006
In this contribution, research activities and trends in the field of RF and microwave power amplifiers design are discussed. Design strategies for high efficiency and linearity amplifiers are focused and the results attained in three years of TARGET NoE activities are presented, showing interesting and state-of-the-art power amplifier design, employing GaAs or GaN technologies.
A Novel Configuration of a Microstrip Microwave Wideband Power Amplifier for Wireless Application
TELKOMNIKA Telecommunication Computing Electronics and Control, 2018
RF/microwave power amplifier (PA) is one of the components that has a large effect on the overall performance of communication system especially in transmitter system and their design is decided by the parameters of transistor selected. This letter presents a new concept of a wide-band microwave amplifier using scattering parameters that is often used in the radio frequency communication systemas an application of the active integrated antenna[1-2]. This power amplifier operates from 1.75 GHz to 2.15GHz frequency and it is based on AT-41410 NPN transistor that has a high transition frequency of 10GHz. The proposed Single Stage PA is designed by microstrip technology and simulated with Advanced Design System (ADS) software. The simulation results indicate good performances; the small power gain (S21) is changed between 11.8 and 10dB. For the input reflection coefficient (S11) is varied between-11 and-22.5dB. Regarding the output reflection coefficient (S22) is varied between-13.1 and-18.7dB over the wide frequency band of 1.75-2.15GHz and stability without oscillating over a wide range of frequencies.