High quantum efficiency InP mesas grown by hybrid epitaxy on Si substrates (original) (raw)
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Journal of Electronic Materials, 1990
The effects of indium sources, mask materials and etched mesa profiles on growth morphology of Fe-doped semi-insulating InP on patterned, nonplanar InP substrates were studied for low-pressure organometallic vapor phase epitaxy (OMVPE). The presence or absence of polycrystalline InP layers deposited on the mask was found to depend on the indium source but not on the mask material. Trimethylindium was found to be the preferable indium source for prevention of polycrystalline InP deposits on the mask. The etched mesa shape was found to dominate the final geometry of the OMVPE regrown InP layer. Inclusion of an interfacial layer of 1.16/~m bandgap wavelength InGaAsP between the dielectric mask and InP substrate produces a favorable mesa shape by controlling the level of undercut during mesa etching, so as to form a smooth mesa profile. After selective regrowth of InP over the resulting mesa, a planar surface is typically achieved for mesa stripes with a mask overhang length as long as 2.6 pm and a mesa height as high as 4 ftm.
Defect engineering for InP epitaxially grown on (001) Si by MOCVD
2021
We demonstrated a defect reduction from 5.6×10 to 7.9×10 cm for InP monolithically grown on a V-groove patterned (001) Si substrates, by optimizing the InxGa1-xAs/InP strained layer superlattices (SLSs). The effects of SLSs are further evaluated by large-area statistical electron channeling contrast imaging (ECCI), scanning transmission electron microscopy (STEM) and room-temperature photoluminescence (RT-PL).
Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
Physical Review B, 2012
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, V/III ratio, and miscut angle < 0.6 • and orientation toward A or B sites), ranging from stable step flow to previously unreported strong step bunching, over 10 nm in height. These observations suggest a window of growth parameters for optimal quality epitaxial layers. We also present a theoretical model for these growth modes that takes account of deposition, diffusion, and dissociation of molecular precursors, and the diffusion and step incorporation of atoms released by the precursors. The experimental conditions for step flow and step bunching are reproduced by this model, with the step bunching instability caused by the difference in molecular dissociation from above and below step edges, as was discussed previously for GaAs (001).
Comparative studies of the epireadiness of 4in. InP substrates for molecular-beam epitaxy growth
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005
Four in. (100mm)-diameter semi-insulating InP substrates from multiple suppliers were evaluated and compared in terms of their epiready crystal quality and surface properties as required for growth in a multiwafer molecular-beam epitaxy system. All epiwafers in this work exhibited excellent crystalline and structural properties. The postgrowth surface morphology and defect density were typically within standard expectations; however, some fallout was observed due to variations in surface finish. Upon investigation of epilayer-substrate interfacial properties, significant differences were observed between the various vendors and also within substrate lots from individual vendors. While some substrates exhibited a clean interface, others had n-type charge accumulations of varying magnitudes. The interface contamination, silicon or sulfur arising from the substrate surface preparation process or from the substrate packaging, resulted in poor device isolation. Buffer leakage currents we...
Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation
Journal of the Electrochemical Society, 2012
We discuss the selective epitaxial growth of InP on patterned Si (001) substrates with Shallow Trench Isolation using a thin Ge buffer to facilitate InP nucleation. The main focus is the defect formation during epitaxial growth and to develop solutions to reduce defect density so that device-quality III-V virtual substrates can be realized on large-scale Si substrates. We compare the InP growth on on-axis and off-axis Si substrates. In the case of off-axis wafers, the formation of stacking faults / twins cannot be avoided, at least not at one of the four side-walls of the Shallow Trench Isolation. The formation of antiphase domain boundaries is reduced (but not yet completely eliminated) by engineering the local Ge surface profile. Further, the high density of Ge surface steps promotes step-flow growth mode instead of 3D growth during the growth of the InP seed layer. Finally, high aspect ratios (>2) allow to confine threading dislocations in the bottom of the trench.
Direct MOVPE growth of InP on GaAs substrates
Journal of Crystal Growth, 1988
We have been able to develop a new useful method for the heteroepitaxial growth on a highly lattice-mismatched substrate by MOVPE successfully. We have found that the surface morphology of InP epitaxial layer grown on a GaAs substrate by MOVPE strongly depends on the supply rate of the group III material. Based on this experimental finding, an lnP epitaxial layer with a uniform and mirror.smooth surface has been successfully grown on a 2-inch GaAs (100) substrate. In addition to the surface morphology, we have measured the RHEED pattern, the x-ray diffraction pattern, the Hall mobility, the carrier concentration, and the photolurninescence as functions of the flow rate of the group 1II carrier gas.
Materials (Basel, Switzerland), 2018
We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO₂) stripes and oriented along the [110] direction. Undercut at the Si/SiO₂ interface was used to reduce the propagation of defects into the III-V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP) was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD); atomic force microscopy (...
InP on patterned Si(001): defect reduction by application of the necking mechanism
Journal of Crystal Growth, 1992
InP is grown by low-pressure metalorganic chemical vapor deposition on exactly (001)-oriented, patterned Si substrates. The Si structure consists of narrow stripes of different widths down to 0.6~sm oriented along [110], bound by V-grooves with (111) sidewalls. Transmission electron microscopy (TEM) of (110)-oriented cross sections shows that InP nucleation occurs on (001) as well as on {111) planes which results in a faceted growth. Thereby, the epilayer shape is remarkably different from what one would expect from the substrate structure. By choosing proper geometries, antiphase domain free InP can be grown. Moreover, with increasing thickness of the growing layer the density of stacking faults and microtwins is drastically reduced due to their propagation towards the side planes of the InP stripes. This process is comparable with the necking procedure in the Czochralski growth technique used to obtain single-crystalline material free from defects. The defect reductions results in a smoother surface morphology and an increase of quantum efficiency by more than 50% as compared to planar film material.