Long-wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapour-phase epitaxy
Brij Arora
Journal of Crystal Growth, 2000
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InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells
Claudio Pelosi
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Defect study of MOVPE-grown InGaP layers on GaAs
A. Knauer
Journal of Crystal Growth, 2004
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Combined (200) DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions
Claudio Pelosi
Physica Status Solidi (c), 2007
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Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures
M. Bersani
2005
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Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Michele Begotti
Applied Surface Science, 2004
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InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy
Nicolas Cordero
Materials Science and Engineering: B, 1999
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Influence of lattice mismatch on photoluminescence from liquid phase epitaxial grown InGaP on GaAs substrates
Augusto Iribarren
Journal of Crystal Growth, 1985
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Luminescence anisotropy of InGaP layers grown by liquid phase epitaxy
T. Prutskij
Journal of Physics D: Applied Physics, 2004
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Formation of interfaces in InGaP/GaAs/InGaP quantum wells
Stanislav Hasenöhrl
Journal of Crystal Growth, 2000
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The effect of the In concentration on the surface morphology of InGaAs-GaAs heterostructures grown by MBE on GaAs substrate
Miguel Angel Vidal
Journal of Physics: Conference Series, 2014
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Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells
Frank Bugge
Materials Science and Engineering: B, 1997
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Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates
P. Van Daele
Journal of Electronic Materials, 2000
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Optical characterization of MOVPE grown -InAs layers in GaAs
Jan Voves
Physica Status Solidi (c), 2005
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MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor
Olivier Feron
Applied Surface Science, 2000
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Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
Nikolay Bert
Semiconductors, 1999
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Selective growth of InGaAs on nanoscale InP islands
Harri Lipsanen
Applied Physics Letters, 1994
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InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
Nicolas Cordero
Solid State Communications, 2006
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Real-Time Structural Analysis of Compositionally Graded InGaAs/GaAs(0 0 1) Layers
Itaru Kamiya
IEEE Journal of Photovoltaics, 2012
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Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structures
Newton Frateschi
Journal of Applied Physics, 2000
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Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers
jozef martaus
Physica Status Solidi (c), 2007
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Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
Yu. I I Mazur
Semiconductor Physics, Quantum Electronics and Optoelectronics, 1999
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Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires
Stanislav Hasenöhrl
Materials Science and Engineering: B, 2001
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Optical study of good quality InGaP/GaAs quantum wells: Influence of the indium content around the lattice-matched composition
Luisa Gonzalez
Applied Physics Letters, 1996
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The morphology of an InP wetting layer on GaAs
Harri Lipsanen
Applied Surface Science, 2004
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Nondestructive assessment of In[sub 0.48](Ga[sub 1−x]Al[sub x])[sub 0.52]P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition
E. Armour
Journal of Applied Physics, 1999
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Deep levels in virtually unstrained InGaAs layers deposited on GaAs
Roberto Mosca
Journal of Applied Physics, 1998
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Epilayer thickness influence on composition modulation of low temperature grown InGaAs/GaAs (001) layers
Luisa Gonzalez
2004
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Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates
Dan Beaton
Journal of Applied Physics, 2013
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Characterization of the post-thermal annealing effect for p-GaAs/i-InGaAsN/n-GaAs hetero-junction solar cells
Ricky Chuang
Solar Energy Materials and Solar Cells, 2012
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Role of V/III ratio on atomic ordering and surface morphology of InGaP layers grown by chemical beam epitaxy
Monica Cotta
Surface Science, 2003
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Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy
Harri Lipsanen
Applied Physics Letters, 1995
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Effects of in situ treatment on InGaAs/InP heterointerfaces produced by organometallic chemical vapor deposition regrowth
Chang Nguyen
Journal of Applied Physics, 1991
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