Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature (original) (raw)

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 2019

Abstract

Arsenic (As) vacancies are introduced beneath the GaAs surfaces irradiated by Ar atoms for surface activation, while As interstitials are co-introduced at deeper regions. After 673 K annealing, As vacancies disappear by the recombination with As interstitials, via the migration of As interstitials.

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