ITO Bonding Interfaces (original) (raw)

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017

Abstract

Using surface-activated bonding technologies we fabricate InGaP/GaAs/ITO/Si hybrid triple-junction (3J) cells with p+-GaAs/ITO and those with n+-GaAs/ITO bonding interfaces. ITO films deposited on the emitter of Si bottom cells work as intermediate layers between III-V and Si sub cells. The samples are not heated during the bonding process. The photovoltaic characteristics of the fabricated 3J cells are compared with characteristics of conventional 3J cells without intermediate layers. The InGaP/GaAs/ITO/Si 3J cells with nnn + -GaAs/ITO bonding interfaces reveal the highest conversion efficiency and the lowest differential resistance among the investigated 3J cells, which implies the potential of ITO-based intermediate layers for achieving more excellent performances of hybrid multi-junction cells.

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