Soliton Emission in a Semiconductor Circular Ring Laser with Y-Junction Coupling (original) (raw)
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Laser chemical etching of waveguides and quasi-optical devices
2003
THE UNIVERSITY OF ARIZONA ® GRADUATE COLLEGE As members of the Final Examination Committee, we certify that we have read the dissertation prepared by Christian Y. Drouet D'Aublgny entitled Laser Chemical Etching of Waveguides and Quasi-Optical Devices and recommend that it be accepted as fulfilling the dissertation requirement for the Degree of Doctor of Philosophy
Semiconductor circular ring lasers fabricated with the cryo-etching technique
IEEE Photonics Technology Letters, 1998
GaAs-AlGaAs multiple quantum well semiconductor circular ring lasers with a shape were fabricated by using the deep UV laser-assisted cryo-etching technique. Most of the fabricated lasers had external quantum efficiencies of more than 18% which were higher than similar devices previously reported. The modal spacing observed from the resonance spectrum near threshold was always several times that corresponding to the circular oscillation of the ring cavity. The observed modal spacing was quite consistent with the theoretical result based on a coupled-cavity model.
Japanese Journal of Applied Physics, 2008
We present the fabrication of an InGaAlP multiple-quantum-well semiconductor laser with a ridge waveguide circular ring resonator using novel UV-laser-assisted etching at a cryogenic substrate temperature of À130 C. For a circular ring laser with a 250-mm-radius circular resonator and a 500 mm Y-junction output coupling section, the light-intensity measurement shows a threshold current of 600 mA with an output power of 2.0 mW by pulse mode current injection at 10 kHz. The spectral characterization shows a lasing wavelength centered at 658.2 nm and a side mode rejection ratio as high as 5 dB.
Rectangular Ring Lasers Based on Total Reflection Mirrors and Three Waveguide Couplers
IEEE Photonics Technology Letters, 2000
Novel rectangular ring lasers containing active and passive sections are fabricated and characterized. The rectangular laser cavity is formed using four low-loss total internal reflection (TIR) mirrors and an output coupler made out of passive three coupled waveguides. The fabrication process is exactly the same as for other active and passive devices except for one deep etch step for TIR mirror fabrication. Two different lasers having active section lengths of 250 and 350 m and total cavity lengths of 580 and 780 m are fabricated. For both devices, lasing thresholds of 38 mA are obtained at room temperature and under continuous-wave operation. Lasing is predominantly single-mode with a sidemode suppression ratio better than 20 dB. The power loss of a single TIR mirror is also determined to be about 0.5 dB. Such low-loss TIR mirrors enabled lasers with very small footprints.
Optics Express, 2013
We present a model for a Yb-doped distributed Bragg reflector (DBR) waveguide laser fabricated in phosphate glass using the femtosecond laser direct-write technique. The model gives emphasis to transverse integrals to investigate the energy distribution in a homogenously doped glass, which is an important feature of femtosecond laser inscribed waveguide lasers (WGLs). The model was validated with experiments comparing a DBR WGL and a fiber laser, and then used to study the influence of distributed rare earth dopants on the performance of such lasers. Approximately 15% of the pump power was absorbed by the doped "cladding" in the femtosecond laser inscribed Yb doped WGL case with the length of 9.8 mm. Finally, we used the model to determine the parameters that optimize the laser output such as the waveguide length, output coupler reflectivity and refractive index contrast.
Electron-cyclotron resonance etching of mirrors for ridge-guided lasers
IEEE Photonics Technology Letters, 1995
Etched laser mirrors are important for the monolithic integration of lasers in optical circuits without cleaved facets. Electron cyclotron resonance (ECR) etching is ideal for opto-electronic fabrication since the etching parameters are independently adjustable and a variety of masking materials are available for creating multiple etch depths, e.g., for etched ridge lasers with etched mirror facets. We report on the fabrication and characterization of ECR etched laser mirrors and waveguides. The quality of the ECR etch is ascertained by measuring the reflection coefficients of 90" turning mirrors in GaAs-AlGaAs multiple-quantum-well (MQW) lasers incorporating multiple numbers of 90' bends. The average reflection coefficient is found to be approximately 80%.
Planar waveguides obtained on commercial glass substrates by sol-gel and laser irradiation methods
The aim of this thesis is the fabrication and characterization of photonic structures for potential applications in fields related to spatial optics, particulary, as planar waveguides. The motivation for the work proposed was to study poorly explored methods and inexpensive substrates that allow fabrication of waveguides in a scalable fashion. These devices are of great interest for a large number of applications in communications, integrated optics and in other fields of technology. During the past few years, many authors have explored diverse fabrication methods in order to obtain photonic structures, although, in many instances, they have developed products which would either be expensive (special, non commercial glasses), or used expensive experimental set-ups (which would make an industrial scale-up inviable). The methods and substrates saught after in this thesis include high repeatability, high precision control and inexpensive materials. A planar waveguide allows light guiding through its volume without significant changes on its properties, thus opening the door to many high technology applications which include the communications, sensors, lasers and optics industrial sectors, among many others. Moreover, a number of new devices may be developed based on optical interconnects to implement distribution systems in parallel or cross-optical signals. The possibility of fabricating planar waveguides using inexpensive and simple technology opens a very interesting field of science. Three different techniques are studied in this work for the fabrication of planar optical waveguides. Sol-Gel method, Laser Zone Melting and Laser Ablation Backwriting of Metal Targets are developed and the corresponding samples obtained are characterized through different methods.
Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
MRS Proceedings, 1999
Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.
2014 16th International Conference on Transparent Optical Networks (ICTON), 2014
Over the last 25 years has seen an unprecedented increase in the growth of phonic components based on semiconductor and solid-state lasers, glass and polymer based optical fibres, and organic LEDs. Emerging technology for component engineering must embed dissimilar materials based devices into an integrated form which is more efficient. In this article, we demonstrate techniques for overcoming the materials related limitations by adopting thin-film deposition techniques based on nano-and femto-second pulsed laser deposition. Three examples of thin-film fabrication for near-IR devices using Er 3+-ion doped glass-on-GaAs, Er 3+-ion doped glass-polydimethyl silane (PDMS) polymer, and Tm 3+-doped nano-silicon thin films and gain medium waveguides are discussed. The modelling tools are used a priori for waveguide engineering for ascertaining the extent to which the structural incompatibility due to mismatch strain can be minimized. The structure and spectroscopic properties of Er 3+-ion doped thin films on silica, polymer, and semiconductor GaAs substrates were examined in detail and are reported. We demonstrate the formation of glass-polymer superlattice structures for waveguide fabrication for overcoming the solubility limits of Er 3+-ions in PDMS polymers. For inscribing waveguides in superlattice structures and nano silicon structures, the ablation machining using fs-pulsed Ti-sapphire laser was used, and the resulting spectroscopic properties of waveguides are discussed.