Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition (original) (raw)

An improvement in the suppression of surface riding of magnesium from p-GaN:Mg into subsequent layers was achieved via low temperature flow modulation epitaxy. In particular, the slope of the Mg concentration drop was reduced to 5 nm/dec for a growth temperature of 620°Cthe lowest value ever reported for metalorganic chemical vapor deposition. The electrical quality of the top layer was verified by creating a two-dimensional electron gas on top of the buried p-GaN layer, which exhibited a mobility of 1300 cm 2 V %1 s %1. In addition, layers grown using flow modulation epitaxy were shown to block the propagation of Mg more efficiently than samples in which an ex situ wet etch was used.