Microscopic calculation of electric field effects in GaAs/AlxGa1−xAs/GaAs tunnel structures (original) (raw)
Related papers
Ballistic electron emission microscopy ͑BEEM͒ is capable of injecting electrons into the L valley of a GaAs-AlAs double-barrier resonant tunneling diode ͑DBRTD͒ coherently. Resonant tunneling through the L-valley confined states of the DBRTD is then observed as additional current onsets in the BEEM spectrum, followed by a characteristic linear regime. The corresponding ballistic transport mass is derived from the effective-mass tensor by a projection in ͓100͔ direction and differs considerably from the GaAs and AlAs longitudinal and transversal effective masses.
Le Journal de Physique Colloques, 1987
O s c i l l a t o r y s t r u c t u r e i s observed i n forward biased dI/dV and d21/dV2 curves of conventional GaAs/GaAlAs h i g h e l e c t r o n m o b i l i t y t r a n s i s t o r samples a t l i q u i d helium temperature using modulation techniques. These o s c i ll a t i o n s can be explained by Fowler-Nordheim tunneling. From t h e p o s i t i o n of t h e o s c i l l a t i o n s t h e conduction band d i s c o n t i n u i t y i s determined a s a f u n c t i o n of t h e aluminum concentration X. For samples having an aluninun concentration between 0.
Role of X valley on the dynamics of electron transport through a GaAs/AlAs double-barrier structure
Physical Review B, 2008
The transport of electrons through a GaAs/AlAs double-barrier structure with p-type doped contacts was investigated using time-resolved photoluminescence spectroscopy. Under illumination, the current-voltage characteristics of the device present two additional features attributed, respectively, to resonant ⌫-⌫ and ⌫-X electron tunneling. Optical measurements for biases where these two alternative transport mechanisms have competitive probabilities revealed an unusual carrier dynamics. The quantum well emission is strongly delayed and we observe a remarkable nonlinear effect where the emission intensity decreases at the arrival of a laser pulse. We propose a simple model that adequately describes our results where we assume that the indirecttransition rate depends on the density of electrons accumulated along the structure.
Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures
1998
In this article we present photoluminescence and photoluminescence excitation spectroscopy data from three triple barrier resonant tunneling structures. The spectroscopic techniques are used to estimate the charge accumulation in both tunneling quantum wells of the devices as a function of bias. The charging behavior is extremely asymmetrical, with significant charge accumulation only in the quantum well adjacent to the emitter region of the device and not in the quantum well adjacent to the collector region, irrespective of the direction of bias. This asymmetry in the charging behavior is analogous to highly asymmetrical double barrier resonant tunneling structures. However, due to the two quantum wells present in the triple barrier design it provides a more flexible system to study charge density dependent effects. We also present evidence for negatively charged exciton formation in the first quantum well for both directions of applied bias.
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1993
Puohc reporting burden for this collection of information is estimated to average l hour per response, including the time for reviewing instructions, searcning exiting data sources gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or anv other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget. Paperwork Reduction Project (0704-0188), Washington, DC 20503
Tunneling effect on double potential barriers GaAs and PbS
Journal of Physics: Conference Series
A simple model of transport phenomenon tunnelling effect through double barrier structure was developed.In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger's equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV-1.0 eV.The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).
Optics and Photonics Journal, 2014
In this paper, we theoretically study the quantum size effects on the electronic transmission and current density of the electrons in GaAs/AlGaAs resonant tunneling diodes by solving the coupled equations Schrödinger-Poisson self-consistently. It is found that the resonant peaks of the transmission coefficients shift towards the lower energy regions as the applied bias voltage increases. Our results indicate that the transmission coefficient depends strongly on the variation of the thickness of collector and emitter. We also study the effect of the doping concentration located in the emitter and collector regions on the transmission and current density. We found that the doping concentration can greatly affect the transmission coefficient and the current density; in particular it increases the peak of the current density and displaces the position of the maxima of the current dependence on the applied bias voltage.
Resonant tunneling in GaAs/AlGaAs triple-barrier structures under uniform transverse magnetic field
A transfer-matrix approach is used to simulate numerically the effect of a uniform transverse magnetic field on resonant tunneling in a symmetric GaAs/Al Y Ga 1-Y As triple-barrier resonant tunneling structure (TBRT) with Y=0.6, barrier regions of 30 A, and quantum well regions of 45 A. The resonant lines splitting (and hence the coupling energy vs. magnetic induction), for the ground and the first excited resonant doublet, shifts up in energy by increasing the magnetic induction. It is expected that, at very high fields, the interaction with confined phonons be enhanced, due to phonon coupling between electron states in the ground quasibound doublet. Each of branches in the resonant dispersion relations shows a parabolic behavior with the location of the cyclotron orbit center. At moderate magnetic fields, the time delay associated with the resonant tunneling is not considerably affected.