Magneto-Optical Properties of InSb for Spectral Filtering in the Far-Infrared (original) (raw)

2020, arXiv: Optics

We present measurements of the Faraday effect in n-type InSb. The Verdet coefficient was determined for a range of carrier concentrations near 101710^{17}1017 cm−3cm^{-3}cm−3 in the lambda\lambdalambda = 8 mu\mumum - 12 mu\mumum far-infrared regime. The absorption coefficient was measured and a figure of merit calculated for each sample. From these measurements, we calculated the carrier effective mass and illustrate the variation of the figure of merit with wavelength. A method for creating a tunable bandpass filter via the Faraday rotation is discussed along with preliminary results from a prototype device.

Magneto-optical properties of InSb for terahertz applications

AIP Advances, 2016

Magneto-optical permittivity tensor spectra of undoped InSb, n-doped and p-doped InSb crystals were determined using the terahertz time-domain spectroscopy (THz-TDS) and the Fourier transform far-infrared spectroscopy (far-FTIR). A Huge polar magneto-optical (MO) Kerr-effect (up to 20 degrees in rotation) and a simultaneous plasmonic behavior observed at low magnetic field (0.4 T) and room temperature are promising for terahertz nonreciprocal applications. We demonstrate the possibility of adjusting the the spectral rage with huge MO by increase in n-doping of InSb. Spectral response is modeled using generalized magneto-optical Drude-Lorentz theory, giving us precise values of free carrier mobility, density and effective mass consistent with electric Hall effect measurement.

Investigation of electro-optical properties of InSb under the influence of spin-orbit interaction at room temperature

Room temperature calculations of electro-optical properties of InSb. Effect of SOI on the band structure and critical points. The addition of SOI made the calculation k-points independent. Optical properties were calculated without broadening or applying scissor potential. a b s t r a c t To investigate the electro-optical properties of indium antimonide (InSb) for photo-voltaic applications, we performed first principles calculations using density functional theory (DFT). Our DFT calculations are based on full potential linearized augmented plane wave (FP-LAPW) method implemented by WIEN2K code. These calculations are carried out using generalized gradient approximation (GGA) and Tran Blaha modified Becke Johnson (TB-mBJ) approximation for exchange co-relation potential. All the calculations are performed with and without the addition of spin-orbit interaction (SOI) to GGA and TB-mBJ potentials. Addition of SOI gives the results very close to their experimental values and makes the calculations independent of k-points consideration. All the results are calculated by considering the temperature as high as 300 K. To the best of our knowledge, all the previously published theoretical results were calculated at 0 K and no such results have been reported at 300 K. In this article, we are reporting band structure, density of states (DOS) and the band gap dependent optical properties of InSb. The calculated direct band gap is 0.17 eV, refractive index is 3.79 and extinction coefficient as 3.22.

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