A gm-boosted common-gate CMOS low-noise amplifier with high P1dB (original) (raw)
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High Gain CMOS Low Noise Amplifier with 2.6 GHz Bandwidth
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IEICE Transactions on Electronics, 2011
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A 1V folded common-gate CMOS LNA for full UWB band
IEICE Electronics Express, 2009
This paper presents a low voltage 2.8-11.2 GHz CMOS broadband low noise amplifier (LNA) using folded common-gate (CG) topology. The broadband input matching is achieved by adopting CG topology. Bandwidth extension is proposed by inserting an inductor to create a broadband band-pass characteristic with a choke inductor. A folded topology is employed to reduce the supply voltage and thus power consumption. A source follower jointly acts as the buffer stage for broadband output impedance matching and feed-forward path for gain enhancement. Maximum power gain is 11.2 dB and the NF ranges from 2.58 to 4 dB over the full band. The LNA achieves an average IIP3 of −6.5 dBm while consumes only 4.6 mW. The proposed broadband LNA is designed in 0.18-μm CMOS process from 1 V supply.