Low-temperature PZT thin-film ferroelectric memories fabricated on SiO 2 /Si and glass substrates
Bui Trinh
Journal of Science: Advanced Materials and Devices, 2016
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Ferroelectric thin film technology for semiconductor memory
Rad Moazzami
Semiconductor science and technology, 1995
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Integration of Sr0.8Bi2.2Ta2O9/HfO2 ferroelectric/dielectric composite film on Si substrate for nonvolatile memory applications
Prof. Manish Goswami
Ferroelectrics Letters Section, 2019
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Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories
Sanjeev Aggarwal
Materials Science & Engineering R-reports, 2001
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Memory applications based on ferroelectric and high-permittivity dielectric thin films
David Taylor
Microelectronic Engineering, 1995
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Electrical characteristics of ferroelectric PZT thin films for DRAM applications
Rad Moazzami
Electron Devices, IEEE …, 1992
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Electrical Characterization of Metal-Ferroelectric-Insulator- Semiconductor having Double Layered Insulator for Memory Applications
DR LYLY NYL ISMAIL
IOP conference series, 2014
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Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications
Jurgen Kosel, Mohammed Alnassar, Mohamed T Ghoneim
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AC conductivity and dielectric properties of sol-gel PZT thin films for ferroelectric memory applications
Ragab Mahani
1992
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Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory
Ze Feng
Nanoscale Research Letters, 2020
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Metalorganic chemical vapor deposited buffer layer in metal–ferroelectric–insulator–semiconductor diodes
Ram Katiyar, Shojan Pavunny
Solid State Communications, 2009
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Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications
Philippe Cousin
Applied Physics Letters, 2006
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Enhanced memory window of Au/BaTiO3/SrTiO3/Si(001) MFIS structure with high c-axis orientation for non-volatile memory applications
Gasidit Panomsuwan
Applied Physics A, 2012
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Novel Electrode Barriers for High Density Ferroelectric Nonvolatile Memories
Hemanshu Bhatt
physica status solidi (a), 2001
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Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications
Deepam Maurya
Scientific reports, 2015
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Plasma Enhanced Atomic Layer Deposited HfO2 Ferroelectric Films for Non-volatile Memory Applications
Prof. Manish Goswami
Journal of Electronic Materials, 2019
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The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
Myunghun Shin
Nanomaterials, 2019
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Switching properties of self-assembled ferroelectric memory cells
Alexei Gruverman
Applied Physics Letters, 1999
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Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications
James Scott
Applied Physics Letters, 1998
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Ferroelectric properties of new chemical solution derived SBT thin films for non-volatile memory devices
Angus Kingon
1999
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Current status and challenges of ferroelectric memory devices
Hermann Kohlstedt
Microelectronic Engineering, 2005
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Electrical properties of ferroelectric thin-film capacitors with (Pt,RuQ$ electrodes for nonvolatile memory applications
Angus Kingon
J Appl Phys, 1995
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Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure
Pham Van Thanh (FPL HN)
Ferroelectrics Letters Section, 2013
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Thin SiO2/a-Si:H/SiO2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories
Nicola Radnev Nedev
Thin Solid Films, 2017
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Structural and electrical properties of metal ferroelectric insulator semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer
anirban dhar
Journal of Physics D-applied Physics, 2008
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Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices
Orlando Auciello
Journal of Applied Physics, 2006
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Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Chi-Sun Hwang
Advanced Functional Materials, 2010
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Electrical characterization of MFeOS gate stacks for ferroelectric FETs
Atul Kumar
Materials Science in Semiconductor Processing, 2013
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Synthesis of the PZT films deposited on pt-coated (100) Si substrates for nonvolatile memory applications
Mohammad Shamsuzzoha
Journal of Electronic Materials, 1997
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