Raman scattering of Ge dot superlattices (original) (raw)

The European Physical Journal B, 2000

Abstract

: Self-organised Ge dot superlattices grown by molecular beam epitaxy of Ge and Si layers utilizing Stranski-Krastanov growth mode were investigated by Raman spectroscopy. An average size of Ge quantum dots was obtained from transmission electron microscopy measurements. The strain and interdiffusion of Ge and Si atoms in Ge quantum dots were estimated from the analysis of frequency positions of

Drt Zahn hasn't uploaded this paper.

Let Drt know you want this paper to be uploaded.

Ask for this paper to be uploaded.