Comprehensive analysis of new near-infrared avalanche photodiode structure (original) (raw)
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We obtain a transfer function and a circuit model for separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM-APDÕs). This model is used to calculate the frequency and time responses of the APDÕs, and to investigate the influence of the carrier velocities and dead-space effect on the bandwidth of the devices. It is shown that for thinner APDÕs, the deadspace effect can be included by considering a non-local model for carrier velocities, and a local model for impact ionization rates. The new approach is easier than the previous methods, and the calculated results are in good agreement with experimental data.
Analysis and modeling of avalanche photodiode using transfer matrix method
In this paper, In0.53Ga0.47As/InP avalanche photodiode (APD) gain is calculated based on the device mechanism and carrier rate equations, using transfer matrix method (TMM). In fact, a distributed model is presented for calculating impact ionization and relates different sections of the multiplication region. In proposed model, recessive equations are used and device gain is considered proportional to the number of output photo-electrons and photo-holes. Comparison of simulation results with experimental data available in literature has demonstrated the capability of the new developed model as a powerful tool to simulate the APDs' behavior and to interpret their experimentally measured characteristics.
Influence of a charge region on the operation of InGaAs/InAlAs/InP avalanche photodiodes
2016
Avalanche photodiodes (APDs) operating at 1.55 μm wavelength are used in many different applications. Therefore, specialized devices with modified electrical characteristics are often strongly needed. In order to design and produce such structures, advanced modeling techniques and computer aided design (CAD) software are utilized. In the paper, modeling results of avalanche photodiodes with separated regions of absorption, grading, charge and multiplication (SAGCM) are presented. Simulations of diode structures were performed using APSYS software developed by Crosslight. Extensive calculations allowed for the detailed analysis of individual regions of the device and the determination of their influence on diode characteristics. Simulations showed a pronounced influence of the charge region on characteristics and performance of the device. Changes of the doping level of this layer exhibited strong modification in the band-to-band tunnel-ing effect. Simultaneously it influenced the ch...
Journal of Lightwave Technology, 2000
A staircase approximation method is deployed to model nonuniform field in the multiplication region and its surrounding ambient of a thin avalanche photodiode (APD). To the best of our knowledge, this is the first instance of introducing an equivalent circuit model that is taking the effect of the electric field profile in a thin APD's multiplication region and its surroundings into account. This equivalent circuit model that is developed from the carriers′ rate equations also includes the effect of the tunneling current. The tunneling current that can be induced as a small current injected into the multiplication region results in an enhanced model behavior at high reverse bias voltages near breakdown. The output current obtained from the proposed model is compared with available experimental data. This comparison reveals excellent model accuracy, in regard to the current levels and prediction of breakdown voltages for both photo and dark currents. Moreover, simulations demonstrate ability of the present model for gainbandwidth analysis.
Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes
VLSI Design, 1998
In this paper, we analyze, based on a two-dimensional drift-diffusion simulation, how variations in the structural components of an InGaAs/InP separate absorption, grading, charge, and multiplication photodiode (SAGCM) alter its performance. The model is employed in conjunction with experimental measurements to enhance the understanding of the device performance. Calibration of the model to the material system and growth technique is performed via the analysis of a simpler, alternate structure. Excellent agreement between the calculated results and experimental measurements of the breakdown voltage, dark current, mesa punchthrough voltage, photoresponse, and gain are obtained.
Transfer matrix modeling of avalanche photodiode
Frontiers of Optoelectronics, 2012
In this article, we calculated and modeled the gain of In 0.53 Ga 0.47 As/InP avalanche photodiode (APD) based on a device mechanism and carrier rate equations using transfer matrix method (TMM). In fact, a distributed model was presented for calculating impact ionization (I 2 ) and relating different sections of the multiplication region. In this proposed model, recessive equations were used, and device gain is considered proportional to the number of output photo-electrons and photo-holes. By comparison of simulated results with experimental data available in literature, it has been demonstrated the capability of the developed model as a powerful tool for simulating APDs' behavior and interpreting their experimentally measured characteristics.
Physical modelling and performance evaluation of III-V heterostructure avalanche photodiodes
2007
A physical simulator of heterostructure avalanche photodiodes (APD's) for optical communications is discussed. The simulator is based on a ID drift-diffusion two-carrier model allowing for heterojunctions, Fermi statistics, optical, avalanche and SRH G-It mechanisms. Particular care is devoted to the implementation of local avalanche models, which have a great impact on the performance evaluation of this device class both from the standpoint of signal and of the excess noise behaviour. Preliminary results are presented on the DC behaviour of state-of-the-art APD's.
Recent Advances in Avalanche Photodiodes
IEEE Journal of Selected Topics in Quantum Electronics, 2004
The development of high-performance optical receivers has been a primary driving force for research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic systems toward higher bit rates has pushed APD performance toward higher bandwidths, lower noise, and higher gain-bandwidth products. Utilizing thin multiplication regions has reduced the excess noise. Further noise reduction has been demonstrated by incorporating new materials and impact ionization engineering with beneficially designed heterostructures. High gain-bandwidth products have been achieved waveguide structures. Recently, imaging and sensing applications have spurred interest in low noise APDs in the infrared and the UV as well as large area APDs and arrays. This paper reviews some of the recent progress in APD technology.
SAGCM avalanche photodiode with additional layer and nonuniform electric field
Frontiers of Optoelectronics, 2013
This paper presents a new method to increase the speed of the separated absorption, grading, charge, and multiplication avalanche photodiode (SAGCM-APD). This improvement is obtained by adding a new thin charge layer between absorption and grading layers, with assuming the non-uniform electric field in different regions of the structure. In addition, a circuit model of the proposed structure is extracted, using carrier rate equations. Also, to achieve the optimum structure, it is tried to have trade-offs among thickness of the layers and have proper tuning of physical parameters. Eventually, frequency and transient response are investigated and it is shown that, in comparison with the previous conventional structure, significant improvements in gain-bandwidth product, speed and also in breakdown voltage are attained.