Simulation study for Dual Material Gate Hetero-Dielectric TFET: Static performance analysis for analog applications (original) (raw)

2013 Annual IEEE India Conference (INDICON), 2013

Abstract

ABSTRACT This paper presents simulation study of Static characteristics for DMG (Dual Material Gate) Hetero-Dielectric (H-D) Tunnel FET. Here, two previously reported device architectures i.e. a DMG Single Dielectric TFET and SMG (Single Material Gate) Hetero-Dielectric TFET have been optimized by tuning the work functions and length and later on their combined impact on the proposed device architecture i.e. DMG Hetero-Dielectric Tunnel FET (DMG H-D TFET) is been studied. Electrical parameters such as threshold voltage, drain current Ids, Sub threshold Slope, Ion to Ioff ratio, ambipolar current Iamb have been studied. Some of the important analog parameters like transconductance gm, drain conductance gd, Output resistance Rout, transconductance generation efficiency gm/Ids have also been studied using ATLAS Device Simulation Software.

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