Detailed study of Ga low compositional substitution by In in polycrystalline GaSb (original) (raw)

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Thermophotovoltaic GaSb Cells Fabrication and Characterisation

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Low Temperature Photoluminescence Spectra of Ga0.77In0.23As0.19SB0.81 Compounds

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N-type vapor diffusion for the fabrication of GaSb thermophotovoltaic cells to increase the quantum efficiency in the long wavelength range

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Effect of In doping in GaSb crystals studied by cathodoluminescence

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Compositional and structural characterisation of GaSb and GaInSb

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Temperature dependence of In1−xGaxSb reflectivity in the far infrared

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Materials Chemistry and Physics, 2011

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Study of the Ga doped In (1-x) GaxSb (x= 0.10, 0.15, 0.25) crystals' the compositional, structural, electrical, and the microstructures properties: Growth by the VDS-process

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GaSb Crystals and Wafers for Photovoltaic Devices

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Study of optical and electrical properties of GaSb/Al/sub x/Ga/sub 1-x/Sb grown by MOCVD

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2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046), 2000

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Low-Temperature Photoluminescence of In0.14Ga0.86As0.13Sb0.87 Solid Solution Lattice Matched to GaSb

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GaSb/AlGaSb COMPOUND SEMICONDUCTORS GROWN BY MOCVD FOR OPTOELECTRONIC APPLICATIONS

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Journal of Nonlinear Optical Physics & Materials, 2006

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Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers

P. Christol

Energy & Environmental Science, 2012

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Fundamental characterization studies of GaSb solar cells

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1991

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Thermophotovoltaic Cells on Zinc Diffused Polycrystalline GaSb

Ron Gutmann

2000

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Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy

S. K . Haywood

Semiconductor Science and Technology, 1991

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Electronic and optical properties of GaSb: N from first principles

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Performance Improvement of the GaSb Thermophotovoltaic Cells With n-Type Emitters

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FUNDAI'IENTAI CHARACTERIZATION STUDTES OF GaSb SOLAR CELLS

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Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07~x~0.22, 0.05~y~0.19) quaternary alloys using infrared photoreflectance

martin muñoz

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High-efficiency GaSb photocells

Boris Ber

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Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells

M. Ahmetoglu

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High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

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Solid State Phenomena, 2010

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Band gaps and charge distribution in quasi-binary (GaSb) $ \mathsf {_{1-x}}$ (InAs) $ \mathsf {_x}$ crystals

N. Bouarissa

The European Physical Journal B - Condensed Matter, 2003

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Melt growth of quasi-binary (GaSb)1−x(InAs)x crystals

Aleksandar Ostrogorsky

Journal of Crystal Growth, 1999

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Substitution of Bi for Sb and its Role in the Thermoelectric Properties and Nanostructuring in Ag1−xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3)

S. Mahanti

Chemistry of Materials, 2008

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Quaternary InGaAsSb Thermophotovoltaic Diodes

Serge Luryi

IEEE Transactions on Electron Devices, 2000

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GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties

Suwat Sopitpan

MRS Advances, 2015

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