Performance Analysis of Modulation Response of a Designed 1550 nm Oxide Confined Vertical Cavity Surface Emitting Laser (original) (raw)
Related papers
2005
Improved oxide-implanted VCSELs utilising the tapered oxide layer are presented. The VCSELs exhibited similar static performance, but superior modulation bandwidth up to 13.2 GHz, compared with conventional blunt oxide VCSELs. The damping rate was reduced two times in the tapered oxide VCSEL and therefore enhanced the maximal modulation bandwidth. A very clean eye was demonstrated from the improved VCSEL with a rising time of 26 ps, falling time of 40 ps and jitter of less than 20 ps, operating at 10 Gbit/s with 6 mA bias and 6 dB extinction ratio. A comprehensive small signal measurement and analysis was conducted. Based on the equivalent circuit model, the extrinsic bandwidth limitation of the tapered oxide VCSELs was determined.
Effect of oxide aperture on the performance of 850nm vertical-cavity surface-emitting lasers
Optik - International Journal for Light and Electron Optics, 2009
An experimental study has been presented of the oxide-confined vertical-cavity surface-emitting lasers (VCSELs) operating in the 850 nm region of the electromagnetic spectrum. In this regard, various relevant VCSEL samples with numerous oxide aperture sizes have been fabricated and characterized. Thorough investigations of the electrical as well as optical characteristics of the fabricated samples have been performed, which include the overall device performance as a function of the oxidize aperture sizes. It is reported that the VCSELs with oxide aperture size o10 mm require low threshold currents (o1 mA). Further, the differential quantum efficiencies up to 28% corresponding to wall-plug efficiencies of up to 15% were measured for a number of these devices.
مجلة التربية والعلم, 2021
Vertical cavity surface emitting laser VCSEL is currently the main solution for many technological aspects, ultrafast optical interconnecting, Gigabit Ethernet, etc. In this paper we present the simulation results by using Optiwave™ software version 7, of the effects of optical mode confinement factor on the modulation properties)which inspected by eye diagram of the received signals) of the vertical cavity surface emitting laser VCSEL, with the range (8-20)Gbps of pseudo random bit sequence PRBS. The quality of the VCSEL modulation have been inspected by time domain signals, spectrums and eye diagram. Simulation results appeared an improvement in the characteristics of received bit sequences of (8, 10, 12.5, 16 and 20) Gbps bit rates, represented by the rising the value of quality factor QF (1.77 to 4.81) versus increasing the value of optical mode confinement factor Γ(0.2 to 0.5) respectively, and a decreasing in jitter time of superimposed traces of eye pattern and well opining eye pattern. And in the corresponding, the bit error rates BERs of the received signals have been decreased, with rising the value of mode confinement factor Γ of the laser at constant modulation index and constant temperature of the laser. Also, the VCSEL's modulation response differences with different bitrates, causes different values of QF and BER for individual value of mode confinement factor Γ.
Design and characterization of In/sub 0.2/Ga/sub 0.8/As MQW vertical-cavity surface-emitting lasers
IEEE Journal of Quantum Electronics, 1993
Abstruct-In this work, the device design, material characterization, and performance of optimized vertical-cavity surface-emitting lasers (VCSEL's) will be presented. The basic design goal was to increase the output power of the lasers without drastically increasing the low threshold current reported in earlier devices. The material characterization was performed by measuring in-plane lasers and broad-area VCSELs made from the same material as the small VCSEL's. For 10 pm square devices, outputs over 3 mW, device operation over 100°C, 6% wall-plug efficiency, threshold voltages under 3 V, and threshold currents under 2 mA are reported.
Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers
IEEE Photonics Technology Letters, 2000
We propose a novel vertical-cavity surface emitting laser (VCSEL) with Al(Ga)As multi-oxide layer (MOX) structure for the purpose of enlarging window aperture maintaining single transverse mode operation. We have fabricated an InGaAs-GaAs VCSEL with the proposed MOX structure formed on GaAs (311)B substrate. We have performed a numerical simulation to investigate single-mode behavior of the proposed structure and showed a possibility of single-mode VCSEL's with a large active area. We have fabricated an 11-m current aperture 960-nm wavelength VCSEL with this MOX structure. The threshold current and voltage were 1.0 mA and 2.0 V, respectively, which are comparable to those of conventional oxide VCSEL's. In 8m aperture, single-mode operation was maintained with a driving current up to four times the threshold.
Vertical Cavity Surface Emitting Lasers as Sources for Optical Communication Systems: A Review
Journal of Nano Research (1661-9897), 2020
Next generation integrated photonic circuits will be dominated by small footprint devices with lower power consumption, low threshold currents and high efficiencies. Vertical Cavity Surface Emitting Lasers (VCSELs) having those attractive qualities has shown results to meet the next generation demands for optical communication sources. VCSELs applications are sensors, data com, optical communication, spectroscopy, printers, optical storage, laser displays, atomic optical clocks, laser radar, optical signal processing to name a few. This review centres around on the basic operation of semiconductor lasers, structure analysis of the devices and parameter optimisation for optical communication systems. This paper will provide comparisons on growth techniques and material selection and intends to give the best material realisation for nano optical sources that are up to date as used in optical communication systems. It also provides summarised improvements by other research groups in realisation of VCSELs looking at speeds, efficiency, temperature dependence and the device physical dimensions. Different semiconductor device growth methods, light emitting materials and VCSELs state of art are reviewed. Discussions and a comparisons on different methods used for realising VCSELs are also looked into in this paper.
Towards the modeling of gaas based 850 nm VCSEL with oxide confinement
2007
The paper presents the structure for an oxide confined vertical cavity surfaceemitting laser (VCSEL) and the simulation results for its operation at 850 nm of the electromagnetic spectrum. In this kind of VCSEL, low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced, and it is found that the device finally yields good operational efficiency. Illustrations are made of a few features for the proposed device that govern it operational characteristics.
Journal of the Optical Society of Korea, 2014
A novel multi-oxide layer structure for vertical cavity surface emitting laser (VCSEL) structures is proposed to achieve higher single mode output power. The structure has four oxide layers with different aperture sizes and thicknesses. The oxide layer thicknesses are optimized simultaneously to reach the highest single mode output power. A heuristic method is proposed for plotting the influence of these variable changes on the operation of optical output power. A comprehensive optical-electrical thermal-gain self-consistent VCSEL model is used to simulate the continuous-wave operation of the multi-layer oxide VCSELs. A comparison between optimized VCSELs with different structures is presented. The results show that by using multi-oxide layers with different thicknesses, higher single-mode optical output power could be achieved in comparison with multi-oxide layer structures with the same thicknesses.